GB1160301A - Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate - Google Patents
Method of Forming a Crystalline Semiconductor Layer on an Alumina SubstrateInfo
- Publication number
- GB1160301A GB1160301A GB35700/66A GB3570066A GB1160301A GB 1160301 A GB1160301 A GB 1160301A GB 35700/66 A GB35700/66 A GB 35700/66A GB 3570066 A GB3570066 A GB 3570066A GB 1160301 A GB1160301 A GB 1160301A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silane
- forming
- semiconductor layer
- crystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 4
- 229910000077 silane Inorganic materials 0.000 abstract 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US510309A US3413145A (en) | 1965-11-29 | 1965-11-29 | Method of forming a crystalline semiconductor layer on an alumina substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1160301A true GB1160301A (en) | 1969-08-06 |
Family
ID=24030225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB35700/66A Expired GB1160301A (en) | 1965-11-29 | 1966-08-09 | Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3413145A (enExample) |
| DE (1) | DE1558803A1 (enExample) |
| GB (1) | GB1160301A (enExample) |
| NL (1) | NL6611992A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2272911A (en) * | 1992-11-27 | 1994-06-01 | Gen Electric | Producing aligned Hi-Tc tape superconductors |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3791882A (en) * | 1966-08-31 | 1974-02-12 | K Ogiue | Method of manufacturing semiconductor devices utilizing simultaneous deposition of monocrystalline and polycrystalline regions |
| US3496037A (en) * | 1967-05-29 | 1970-02-17 | Motorola Inc | Semiconductor growth on dielectric substrates |
| DE1589543B2 (de) * | 1967-09-12 | 1972-08-24 | Robert Bosch Gmbh, 7000 Stuttgart | Halbleiterbauelement und verfahren zu seiner weichlotkontaktierung |
| US3664867A (en) * | 1969-11-24 | 1972-05-23 | North American Rockwell | Composite structure of zinc oxide deposited epitaxially on sapphire |
| BE795556A (fr) * | 1972-02-17 | 1973-06-18 | Siemens Ag | Circuit integre comportant des couches de semiconducteur disposees sur un substrat isolant |
| BE795737A (fr) * | 1972-02-21 | 1973-06-18 | Siemens Ag | Procede pour fabriquer des transistors a effet de champ a canal |
| US3969753A (en) * | 1972-06-30 | 1976-07-13 | Rockwell International Corporation | Silicon on sapphire oriented for maximum mobility |
| US4177321A (en) * | 1972-07-25 | 1979-12-04 | Semiconductor Research Foundation | Single crystal of semiconductive material on crystal of insulating material |
| US4044372A (en) * | 1974-08-05 | 1977-08-23 | Sensor Technology, Inc. | Photovoltaic cell having controllable spectral response |
| US3930908A (en) * | 1974-09-30 | 1976-01-06 | Rca Corporation | Accurate control during vapor phase epitaxy |
| US4268848A (en) * | 1979-05-07 | 1981-05-19 | Motorola, Inc. | Preferred device orientation on integrated circuits for better matching under mechanical stress |
| US4279688A (en) * | 1980-03-17 | 1981-07-21 | Rca Corporation | Method of improving silicon crystal perfection in silicon on sapphire devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| LU36370A1 (enExample) * | 1957-08-26 | |||
| US2992903A (en) * | 1957-10-30 | 1961-07-18 | Imber Oscar | Apparatus for growing thin crystals |
| NL263037A (enExample) * | 1960-03-31 | |||
| US3218204A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound |
| US3177100A (en) * | 1963-09-09 | 1965-04-06 | Rca Corp | Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3 |
-
1965
- 1965-11-29 US US510309A patent/US3413145A/en not_active Expired - Lifetime
-
1966
- 1966-08-09 GB GB35700/66A patent/GB1160301A/en not_active Expired
- 1966-08-24 DE DE19661558803 patent/DE1558803A1/de active Pending
- 1966-08-25 NL NL6611992A patent/NL6611992A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2272911A (en) * | 1992-11-27 | 1994-06-01 | Gen Electric | Producing aligned Hi-Tc tape superconductors |
| GB2272911B (en) * | 1992-11-27 | 1996-12-04 | Gen Electric | Apparatus and method for making aligned hi-tc tape superconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| US3413145A (en) | 1968-11-26 |
| NL6611992A (enExample) | 1967-05-30 |
| DE1558803A1 (de) | 1970-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1160301A (en) | Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate | |
| GB1151484A (en) | Epitaxial Growth of Germanium | |
| GB1029663A (en) | Method of producing a group of crystals such as semiconductor crystals on a polycrystalline substrate | |
| GB1136944A (en) | Improvements in or relating to heating elements | |
| US2957789A (en) | Semiconductor devices and methods of preparing the same | |
| GB1276012A (en) | Methods of producing antimony-containing layers on semiconductor bodies | |
| US3160521A (en) | Method for producing monocrystalline layers of semiconductor material | |
| GB1345367A (en) | Growing crystals upon a substrate | |
| GB1414254A (en) | Epitaxial growth of semiconductor material from the liquid phase | |
| US3490961A (en) | Method of producing silicon body | |
| GB1368315A (en) | Method for producing semiconductor on-insulator electronic devices | |
| GB1160213A (en) | A Method of Growing Semiconductor Crystals | |
| US3291657A (en) | Epitaxial method of producing semiconductor members using a support having varyingly doped surface areas | |
| GB1204544A (en) | Semiconductor device and method of manufacturing the same | |
| GB1174702A (en) | Semiconductor Growth on Dielectric Substrates | |
| GB1273097A (en) | Improvements in or relating to the manufacture of hollow bodies of semiconductor material | |
| GB1260233A (en) | Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase | |
| GB998386A (en) | Method of producing electrical semiconductor devices | |
| GB995087A (en) | Method for the controlled doping of crystalline substances | |
| GB1132491A (en) | Improvements in or relating to the manufacture of semiconductor systems | |
| GB929559A (en) | Method of growing epitaxial semiconductor layers | |
| GB808580A (en) | Improvements in or relating to an element having a semi-conductor and a method of producing the same | |
| US3397094A (en) | Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere | |
| GB727447A (en) | Formation of p-n junctions | |
| GB1194017A (en) | Improvements in and relating to Methods of Manufacturing Semiconductor Devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |