GB1154677A - Semiconductor Structures Having Antimony Doped Buried Layers and Methods. - Google Patents
Semiconductor Structures Having Antimony Doped Buried Layers and Methods.Info
- Publication number
- GB1154677A GB1154677A GB7032/68A GB703268A GB1154677A GB 1154677 A GB1154677 A GB 1154677A GB 7032/68 A GB7032/68 A GB 7032/68A GB 703268 A GB703268 A GB 703268A GB 1154677 A GB1154677 A GB 1154677A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- antimony
- diffusion
- methods
- semiconductor structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61637567A | 1967-02-15 | 1967-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1154677A true GB1154677A (en) | 1969-06-11 |
Family
ID=24469167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7032/68A Expired GB1154677A (en) | 1967-02-15 | 1968-02-13 | Semiconductor Structures Having Antimony Doped Buried Layers and Methods. |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE710650A (enExample) |
| FR (1) | FR1555061A (enExample) |
| GB (1) | GB1154677A (enExample) |
-
1968
- 1968-02-12 FR FR1555061D patent/FR1555061A/fr not_active Expired
- 1968-02-12 BE BE710650D patent/BE710650A/xx unknown
- 1968-02-13 GB GB7032/68A patent/GB1154677A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1555061A (enExample) | 1969-01-24 |
| BE710650A (enExample) | 1968-08-12 |
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