GB1154677A - Semiconductor Structures Having Antimony Doped Buried Layers and Methods. - Google Patents

Semiconductor Structures Having Antimony Doped Buried Layers and Methods.

Info

Publication number
GB1154677A
GB1154677A GB703268A GB703268A GB1154677A GB 1154677 A GB1154677 A GB 1154677A GB 703268 A GB703268 A GB 703268A GB 703268 A GB703268 A GB 703268A GB 1154677 A GB1154677 A GB 1154677A
Authority
GB
United Kingdom
Prior art keywords
layer
antimony
diffusion
methods
semiconductor structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB703268A
Inventor
Myron Allen Lieberman
Donald Leonard Tolliver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1154677A publication Critical patent/GB1154677A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

1,154,677. Semi-conductor devices. MOTOROLA Inc. 13 Feb., 1968 [15 Feb., 1967], No. 7032/68. Heading H1K. A buried high conductivity layer 16 is formed by diffusion of antimony into, for example, a P-type silicon substrate 10 and by the subsequent growth of an epitaxial layer 17 on top of the substrate. The antimony diffusion is effected by depositing antimony as oxide or silicate on to a silicon oxide masking layer (11) and then covering the antimony layer with a further silicon oxide layer (15) so that antimony does not escape during the diffusion step which is carried out in an oxidizing atmosphere. After diffusion, oxidic material is removed from the surface which is then cleaned to receive an arsenic doped N-type layer 17 formed by hydrogen reduction of silicon chloride. The epitaxial layer may be passivated by growth of an oxide layer 18.
GB703268A 1967-02-15 1968-02-13 Semiconductor Structures Having Antimony Doped Buried Layers and Methods. Expired GB1154677A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61637567A 1967-02-15 1967-02-15

Publications (1)

Publication Number Publication Date
GB1154677A true GB1154677A (en) 1969-06-11

Family

ID=24469167

Family Applications (1)

Application Number Title Priority Date Filing Date
GB703268A Expired GB1154677A (en) 1967-02-15 1968-02-13 Semiconductor Structures Having Antimony Doped Buried Layers and Methods.

Country Status (3)

Country Link
BE (1) BE710650A (en)
FR (1) FR1555061A (en)
GB (1) GB1154677A (en)

Also Published As

Publication number Publication date
BE710650A (en) 1968-08-12
FR1555061A (en) 1969-01-24

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