GB1139543A - Construction of semiconductor junction diodes - Google Patents
Construction of semiconductor junction diodesInfo
- Publication number
- GB1139543A GB1139543A GB2286166A GB2286166A GB1139543A GB 1139543 A GB1139543 A GB 1139543A GB 2286166 A GB2286166 A GB 2286166A GB 2286166 A GB2286166 A GB 2286166A GB 1139543 A GB1139543 A GB 1139543A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- strip
- semi
- conductor
- kovar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000010276 construction Methods 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 229910000833 kovar Inorganic materials 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
1,139,543. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 19 May, 1967 [23 May, 1966], No. 22861/66. Heading H1K. A semi-conductor junction diode is mounted between the conductors of a strip transmisson line and encapsulated. A tunnel diode is produced by soldering a gold plated "Kovar" (Registered Trade Mark) disc (9) to a gold plated Kovar strip (10), mounting a germanium die (11) on disc (9) by thermal bonding with the gold, placing an arsenic-doped tin dot (12) on the die (11), heating in an atmosphere of argon or hydrogen containing hydrogen chloride gas to cause the tin to wet the germanium and form into a hemisphere, and heating in an atmosphere of pure argon or hydrogen to a higher temperature to alloy the dot to the semi-conductor, Figs. 2 and 3 (not shown). A second gold plated Kovar strip (13) is placed on a heater (14) and a dielectric spacer (15) coated with an adhesive is used to support the diode assembly so that the alloyed dot (12) is bonded to strip (13), the two Kovar strips (10, 13) extending parallel to one another to form a strip transmission line, Fig. 4 (not shown). The residual volume between the strips (10, 13) is filled with a resin (16) which is cured to encapsulate the diode, Fig. 5 (not shown). The end of the assembly is then eroded, for example by lapping, to reduce the area of the alloyed junction as shown in Fig. 6. The dielectric spacer 15 and the resin 16 are of the same material which may be a siliconloaded epoxide resin. The semi-conductor diode may be a varactor diode instead of a tunnel diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2286166A GB1139543A (en) | 1966-05-23 | 1966-05-23 | Construction of semiconductor junction diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2286166A GB1139543A (en) | 1966-05-23 | 1966-05-23 | Construction of semiconductor junction diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1139543A true GB1139543A (en) | 1969-01-08 |
Family
ID=10186221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2286166A Expired GB1139543A (en) | 1966-05-23 | 1966-05-23 | Construction of semiconductor junction diodes |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1139543A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101423907B (en) * | 2007-10-29 | 2010-12-22 | 北京有色金属与稀土应用研究所 | Sn-Ge-As alloy as well as preparation method and use thereof |
-
1966
- 1966-05-23 GB GB2286166A patent/GB1139543A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101423907B (en) * | 2007-10-29 | 2010-12-22 | 北京有色金属与稀土应用研究所 | Sn-Ge-As alloy as well as preparation method and use thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1068208A (en) | Semiconductor device | |
| GB1252055A (en) | ||
| GB1213726A (en) | Improvements relating to electrical circuit assemblies | |
| GB1207728A (en) | Housing assembly for an electric circuit | |
| GB1004020A (en) | Improvements in or relating to the mounting of electrical components | |
| GB1292636A (en) | Semiconductor devices and methods for their fabrication | |
| GB1038007A (en) | Electrical assembly | |
| GB1300248A (en) | Light activated semiconductor device | |
| GB1139543A (en) | Construction of semiconductor junction diodes | |
| FR2269793B1 (en) | ||
| GB1181336A (en) | Strip Mounted Semiconductor Device | |
| MY7400320A (en) | Thermal fatigue-free semiconductor device | |
| GB1206759A (en) | Semiconductor devices | |
| GB1190290A (en) | Method of Fitting Semiconductor Pellet on Metal Body | |
| JPS5662345A (en) | Load frame and semiconductor device | |
| SE319835B (en) | ||
| GB1329810A (en) | Semiconductor device packaging | |
| GB1374595A (en) | Internal construction for plastic semiconductor packages | |
| GB1230620A (en) | ||
| GB1054670A (en) | ||
| GB1031890A (en) | Crystal rectifiers and mountings therefor | |
| GB1210584A (en) | Semiconductor device and method of manufacturing the same | |
| GB1044276A (en) | Electrical semiconductor device | |
| GB997228A (en) | Semiconductor device and method of producing it | |
| GB1160911A (en) | Semiconductor Devices |