GB1136924A - Method of diffusing impurities into solid materials - Google Patents

Method of diffusing impurities into solid materials

Info

Publication number
GB1136924A
GB1136924A GB5330865A GB5330865A GB1136924A GB 1136924 A GB1136924 A GB 1136924A GB 5330865 A GB5330865 A GB 5330865A GB 5330865 A GB5330865 A GB 5330865A GB 1136924 A GB1136924 A GB 1136924A
Authority
GB
United Kingdom
Prior art keywords
irradiation
semi
conductor
impurities
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5330865A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1136924A publication Critical patent/GB1136924A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

1,136,924. Making semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 15 Dec., 1965 [23 Dec., 1964], No. 53308/65. Heading H1K. Impurities are selectively diffused into localized regions of semi-conductor bodies which have been treated by irradiation to have lattice defects enabling rapid movement of impurity atoms into the semi-conductor. This localized irradiation is effective as a masking process and may be carried out using α, # or γ irradiation or neutron bombardment. In an embodiment an area of an N-type silicon wafer is subjected to electron beam bombardment, and boron is diffused from the vapour phase into the treated region. A diode is completed by providing an aluminium contact on the P-type region thus formed and a nickel contact on the N-type body. The specification states that the invention may be applied to the introduction of impurities into insulators and conductors.
GB5330865A 1964-12-23 1965-12-15 Method of diffusing impurities into solid materials Expired GB1136924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7409164 1964-12-23

Publications (1)

Publication Number Publication Date
GB1136924A true GB1136924A (en) 1968-12-18

Family

ID=13537145

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5330865A Expired GB1136924A (en) 1964-12-23 1965-12-15 Method of diffusing impurities into solid materials

Country Status (4)

Country Link
DE (1) DE1544227A1 (en)
FR (1) FR1466612A (en)
GB (1) GB1136924A (en)
NL (1) NL6516185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133618A (en) * 1983-01-05 1984-07-25 Gen Electric Co Plc Fabricating semiconductor circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133618A (en) * 1983-01-05 1984-07-25 Gen Electric Co Plc Fabricating semiconductor circuits

Also Published As

Publication number Publication date
NL6516185A (en) 1966-06-24
FR1466612A (en) 1967-01-20
DE1544227A1 (en) 1970-03-12

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