GB1136840A - Improvements relating to semiconductor devices - Google Patents

Improvements relating to semiconductor devices

Info

Publication number
GB1136840A
GB1136840A GB3060967A GB3060967A GB1136840A GB 1136840 A GB1136840 A GB 1136840A GB 3060967 A GB3060967 A GB 3060967A GB 3060967 A GB3060967 A GB 3060967A GB 1136840 A GB1136840 A GB 1136840A
Authority
GB
United Kingdom
Prior art keywords
covers
thyristor
ceramic ring
ring
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3060967A
Inventor
Heinz Juchmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to GB3060967A priority Critical patent/GB1136840A/en
Publication of GB1136840A publication Critical patent/GB1136840A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Abstract

1,136,840. Semi-conductor devices. LICENTIA PATENT - VERWALTUNGS G.m.b.H. 3 July, 1967, No. 30609/67. Heading H1K. A semi-conductor device comprises the assembly of a semi-conductor element (e.g. a thyristor 2) and a conductive member 6 held under pressure in contact with the element 2 to provide an electrical connection therewith, the assembly being encapsulated in a disc-like enclosure comprising a ceramic ring 12 and metallic covers 14, 16 which are secured to the ring at or adjacent axially-opposed ends thereof and are shaped to locate the assembly in position within the enclosure. The silicon thyristor 2 is mounted on a molybdenum or tungsten baseplate 4 which fits within a recess in the lower cover 14. The silver-copper-silver conductive block 6, held under pressure in contact with the thyristor 2, similarly fits within a recess in the upper cover 16. A portion 10 of the block 6 is cut away to permit connection to be made via a metal tube 18 passing through the ceramic ring 12 and a lead 8 to the control electrode of the thyristor. The lower cover 14 has a peripheral upstanding flange 28 which is soldered to the lower part of the ceramic ring 12. A metal ring 20 is soldered to the upper part of the ceramic ring as shown and the upper cover 16 is edge-welded thereto. The covers preferably have approximately the same coefficient of expansion as the ceramic ring. A comparatively high current may be carried by the device owing to the large cooling area provided by the covers provided on both sides of the element 2. In the construction shown the covers are dished so that the device is particularly thin; in a modification, Fig. 3 (not shown), the covers are planar except for the recesses retaining the base-plate 4 and block 6. The block 6 is accordingly of greater thickness and increased heat capacity. In a second embodiment, Fig. 2 (not shown), the solder joints between the covers and the ceramic ring are made to the upper and lower surfaces of the ring instead of to its outer cylindrical surface. The thyristor 2 may be replaced by a diode in which case the lead 8 and tube 18 are omitted.
GB3060967A 1967-07-03 1967-07-03 Improvements relating to semiconductor devices Expired GB1136840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3060967A GB1136840A (en) 1967-07-03 1967-07-03 Improvements relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3060967A GB1136840A (en) 1967-07-03 1967-07-03 Improvements relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1136840A true GB1136840A (en) 1968-12-18

Family

ID=10310341

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3060967A Expired GB1136840A (en) 1967-07-03 1967-07-03 Improvements relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB1136840A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000011714A1 (en) * 1998-08-25 2000-03-02 Commissariat A L'energie Atomique Collective method for conditioning a plurality of components initially formed in a common substrate
CN101916745A (en) * 2010-05-31 2010-12-15 江阴市赛英电子有限公司 Novel plate crimped dual-chip encapsulated ceramic package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000011714A1 (en) * 1998-08-25 2000-03-02 Commissariat A L'energie Atomique Collective method for conditioning a plurality of components initially formed in a common substrate
FR2783354A1 (en) * 1998-08-25 2000-03-17 Commissariat Energie Atomique COLLECTIVE PROCESS FOR CONDITIONING A PLURALITY OF COMPONENTS FORMED INITIALLY IN THE SAME SUBSTRATE
US6581279B1 (en) 1998-08-25 2003-06-24 Commissariat A L'energie Atomique Method of collectively packaging electronic components
CN101916745A (en) * 2010-05-31 2010-12-15 江阴市赛英电子有限公司 Novel plate crimped dual-chip encapsulated ceramic package

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