GB1117713A - Method of manufacture of an integrated circuit - Google Patents
Method of manufacture of an integrated circuitInfo
- Publication number
- GB1117713A GB1117713A GB3551/67A GB355167A GB1117713A GB 1117713 A GB1117713 A GB 1117713A GB 3551/67 A GB3551/67 A GB 3551/67A GB 355167 A GB355167 A GB 355167A GB 1117713 A GB1117713 A GB 1117713A
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacture
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH126866A CH428947A (fr) | 1966-01-31 | 1966-01-31 | Procédé de fabrication d'un circuit intégré |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1117713A true GB1117713A (en) | 1968-06-19 |
Family
ID=4206417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3551/67A Expired GB1117713A (en) | 1966-01-31 | 1967-01-24 | Method of manufacture of an integrated circuit |
Country Status (8)
| Country | Link |
|---|---|
| AT (1) | AT262383B (https=) |
| BE (1) | BE693141A (https=) |
| CH (1) | CH428947A (https=) |
| DE (1) | DE1619949A1 (https=) |
| FR (1) | FR1509644A (https=) |
| GB (1) | GB1117713A (https=) |
| NL (1) | NL6701103A (https=) |
| SE (1) | SE309453B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5635024B2 (https=) * | 1973-12-14 | 1981-08-14 | ||
| JPS6022497B2 (ja) * | 1974-10-26 | 1985-06-03 | ソニー株式会社 | 半導体装置 |
| JPS5718341B2 (https=) * | 1974-12-11 | 1982-04-16 | ||
| DE2632647A1 (de) * | 1976-07-20 | 1978-01-26 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
| DE102007032577B4 (de) | 2007-07-09 | 2011-07-21 | ADC GmbH, 14167 | Endverschluss für die Telekommunikations- und Datentechnik |
-
1966
- 1966-01-31 CH CH126866A patent/CH428947A/fr unknown
-
1967
- 1967-01-23 AT AT64367A patent/AT262383B/de active
- 1967-01-24 GB GB3551/67A patent/GB1117713A/en not_active Expired
- 1967-01-24 NL NL6701103A patent/NL6701103A/xx unknown
- 1967-01-25 BE BE693141D patent/BE693141A/xx unknown
- 1967-01-26 DE DE19671619949 patent/DE1619949A1/de active Pending
- 1967-01-30 FR FR92980A patent/FR1509644A/fr not_active Expired
- 1967-01-31 SE SE1347/67A patent/SE309453B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6701103A (https=) | 1967-08-01 |
| CH428947A (fr) | 1967-01-31 |
| BE693141A (https=) | 1967-07-03 |
| SE309453B (https=) | 1969-03-24 |
| FR1509644A (fr) | 1968-01-12 |
| DE1619949A1 (de) | 1970-07-30 |
| AT262383B (de) | 1968-06-10 |
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