GB1114598A - Improvements in and relating to methods of measuring carrier concentration in semiconductors - Google Patents

Improvements in and relating to methods of measuring carrier concentration in semiconductors

Info

Publication number
GB1114598A
GB1114598A GB3690465A GB3690465A GB1114598A GB 1114598 A GB1114598 A GB 1114598A GB 3690465 A GB3690465 A GB 3690465A GB 3690465 A GB3690465 A GB 3690465A GB 1114598 A GB1114598 A GB 1114598A
Authority
GB
United Kingdom
Prior art keywords
carrier concentration
temperature
semi
conductor
sign
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3690465A
Inventor
Neil Guthrie Dougall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB3690465A priority Critical patent/GB1114598A/en
Publication of GB1114598A publication Critical patent/GB1114598A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/002Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

1,114,598. Measuring semi-conductor carrier concentration. ASSOCIATED SEMI-CONDUCTOR MANUFACTURERS Ltd. Aug. 12, 1966[Aug. 27, 1965], No. 36904/65. Heading G1U. In a non destructive method of measuring carrier concentration in a semi-conductor body which is p type at a lower temperature and n type at a higher, the body is cooled and/or heated through a temperature range where the thermoelectric effect changes sign. The temperature at which this sign change occurs is detected and uniquely indicates the carrier concentration. To carry out the method slice 8 of e.g. indium antimonide is clamped on the flat top of a vertical copper rod 4 and is heated and cooled by raising and lowering the rod relative to a liquid nitrogen refrigerant 2 in a flask 1. The temperature at the end surface is measured by a thermocouple 7 and the sign of the thermoelectric effect is monitored by deriving an output across a probe 11 and a clamping spring 9 secured to the rod 4, the probe being at the higher temperature of its holder 12.
GB3690465A 1965-08-27 1965-08-27 Improvements in and relating to methods of measuring carrier concentration in semiconductors Expired GB1114598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3690465A GB1114598A (en) 1965-08-27 1965-08-27 Improvements in and relating to methods of measuring carrier concentration in semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3690465A GB1114598A (en) 1965-08-27 1965-08-27 Improvements in and relating to methods of measuring carrier concentration in semiconductors

Publications (1)

Publication Number Publication Date
GB1114598A true GB1114598A (en) 1968-05-22

Family

ID=10392106

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3690465A Expired GB1114598A (en) 1965-08-27 1965-08-27 Improvements in and relating to methods of measuring carrier concentration in semiconductors

Country Status (1)

Country Link
GB (1) GB1114598A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0634056A1 (en) * 1992-04-03 1995-01-18 TALLON, Jeffery Lewis Thermopower mapping of superconducting cuprates
CN103868952A (en) * 2014-02-27 2014-06-18 中国电子科技集团公司第十一研究所 Carrier concentration testing method of ion implanted layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0634056A1 (en) * 1992-04-03 1995-01-18 TALLON, Jeffery Lewis Thermopower mapping of superconducting cuprates
EP0634056A4 (en) * 1992-04-03 1997-03-05 Jeffery Lewis Tallon Thermopower mapping of superconducting cuprates.
CN103868952A (en) * 2014-02-27 2014-06-18 中国电子科技集团公司第十一研究所 Carrier concentration testing method of ion implanted layer
CN103868952B (en) * 2014-02-27 2016-05-25 中国电子科技集团公司第十一研究所 Ion implanted layer carrier concentration method of testing

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