GB1105314A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1105314A
GB1105314A GB50672/63A GB5067263A GB1105314A GB 1105314 A GB1105314 A GB 1105314A GB 50672/63 A GB50672/63 A GB 50672/63A GB 5067263 A GB5067263 A GB 5067263A GB 1105314 A GB1105314 A GB 1105314A
Authority
GB
United Kingdom
Prior art keywords
manganese
arsenide
region
bismuth
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50672/63A
Other languages
English (en)
Inventor
John Robert Dale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB50672/63A priority Critical patent/GB1105314A/en
Priority to CH1637864A priority patent/CH468718A/de
Priority to NL6414781A priority patent/NL6414781A/xx
Priority to DE1489194A priority patent/DE1489194C3/de
Priority to JP7168564A priority patent/JPS42338B1/ja
Priority to AT1078564A priority patent/AT258370B/de
Priority to SE15490/64A priority patent/SE313118B/xx
Priority to US420287A priority patent/US3357870A/en
Priority to FR999785A priority patent/FR1418641A/fr
Priority to BE657564A priority patent/BE657564A/xx
Publication of GB1105314A publication Critical patent/GB1105314A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
GB50672/63A 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices Expired GB1105314A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices
CH1637864A CH468718A (de) 1963-12-23 1964-12-18 Halbleitervorrichtung und Verfahren zu deren Herstellung
NL6414781A NL6414781A (https=) 1963-12-23 1964-12-18
DE1489194A DE1489194C3 (de) 1963-12-23 1964-12-19 Halbleiterbauelement
JP7168564A JPS42338B1 (https=) 1963-12-23 1964-12-21
AT1078564A AT258370B (de) 1963-12-23 1964-12-21 Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor
SE15490/64A SE313118B (https=) 1963-12-23 1964-12-21
US420287A US3357870A (en) 1963-12-23 1964-12-22 Semiconductor device
FR999785A FR1418641A (fr) 1963-12-23 1964-12-23 Dispositif semi-conducteur
BE657564A BE657564A (https=) 1963-12-23 1964-12-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1105314A true GB1105314A (en) 1968-03-06

Family

ID=10456884

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50672/63A Expired GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Country Status (7)

Country Link
US (1) US3357870A (https=)
AT (1) AT258370B (https=)
BE (1) BE657564A (https=)
CH (1) CH468718A (https=)
DE (1) DE1489194C3 (https=)
GB (1) GB1105314A (https=)
NL (1) NL6414781A (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL245567A (https=) * 1958-11-20

Also Published As

Publication number Publication date
NL6414781A (https=) 1965-06-24
DE1489194B2 (de) 1973-04-26
AT258370B (de) 1967-11-27
DE1489194A1 (de) 1969-05-08
CH468718A (de) 1969-02-15
DE1489194C3 (de) 1973-11-29
BE657564A (https=) 1965-06-23
US3357870A (en) 1967-12-12

Similar Documents

Publication Publication Date Title
US2623105A (en) Semiconductor translating device having controlled gain
US2846340A (en) Semiconductor devices and method of making same
US4697202A (en) Integrated circuit having dislocation free substrate
US3097308A (en) Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US3566215A (en) Tensioned semiconductor component
US4176372A (en) Semiconductor device having oxygen doped polycrystalline passivation layer
ATE223109T1 (de) Metall-halbleiter feldeffekttransistor hoher leistung und hoher frequenz, hergestellt aus siliziumcarbid
US3341755A (en) Switching transistor structure and method of making the same
GB963256A (en) Semiconductor devices
US3114864A (en) Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
JPH0261151B2 (https=)
US3245847A (en) Method of producing stable gallium arsenide and semiconductor diodes made therefrom
US4183033A (en) Field effect transistors
US3065392A (en) Semiconductor devices
US3500141A (en) Transistor structure
GB1422675A (en) Semiconductor light source comprising a silicon carbide single crystal
US3457473A (en) Semiconductor device with schottky barrier formed on (100) plane of gaas
US3308356A (en) Silicon carbide semiconductor device
GB1152156A (en) Semiconductor Devices
US3248614A (en) Formation of small area junction devices
US3358158A (en) Semiconductor devices
GB1105314A (en) Improvements in and relating to semiconductor devices
Dale et al. Heterojunctions by alloying
US4223336A (en) Low resistivity ohmic contacts for compound semiconductor devices
US3454847A (en) Bistable two or three terminal double injection switching element