GB1104855A - Electronic switching circuit - Google Patents

Electronic switching circuit

Info

Publication number
GB1104855A
GB1104855A GB20402/65A GB2040265A GB1104855A GB 1104855 A GB1104855 A GB 1104855A GB 20402/65 A GB20402/65 A GB 20402/65A GB 2040265 A GB2040265 A GB 2040265A GB 1104855 A GB1104855 A GB 1104855A
Authority
GB
United Kingdom
Prior art keywords
pulse
switch
turned
transformer
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20402/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merlin Gerin SA
Original Assignee
Merlin Gerin SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merlin Gerin SA filed Critical Merlin Gerin SA
Publication of GB1104855A publication Critical patent/GB1104855A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Abstract

1,104,855. Transistor switching circuits; pulse generating circuits. ETABLISSEMENTS MERLIN & GERIN S.A. 14 May, 1965 [25 June, 1964], No. 20402/65. Headings H3P and H3T. [Also in Division F1] A gate turn off (G.T.O.) semi-conductor device is turned off when switch C is opened causing a negative trigger pulse to be emitted from the secondary S of pulse transformer T and is turned on when switch C is closed so that energy stored within the transformer T causes a current i 2 to flow and produce a positive pulse at the secondary S. A diode D, which limits the amplitude of the positive-going pulse and avoids overloading or destruction of the G.T.O. device, connects the primary P via a resistor R2 to a D.C. supply. The switch contact C may be a mechanical or static element.
GB20402/65A 1964-06-25 1965-05-14 Electronic switching circuit Expired GB1104855A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR979689A FR1407822A (en) 1964-06-25 1964-06-25 Electronic switch

Publications (1)

Publication Number Publication Date
GB1104855A true GB1104855A (en) 1968-03-06

Family

ID=8833244

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20402/65A Expired GB1104855A (en) 1964-06-25 1965-05-14 Electronic switching circuit

Country Status (8)

Country Link
US (1) US3348073A (en)
BE (1) BE664146A (en)
CH (1) CH419283A (en)
DE (1) DE1228665B (en)
FR (1) FR1407822A (en)
GB (1) GB1104855A (en)
NL (1) NL6507460A (en)
SE (1) SE306559B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3509376A (en) * 1965-07-22 1970-04-28 Lockheed Aircraft Corp Static solid-state switching circuit utilizing a switching device having turn-on and turn-off control
US3898570A (en) * 1968-07-26 1975-08-05 Us Navy High speed control circuit
US3740583A (en) * 1971-05-25 1973-06-19 Bendix Corp Silicon controlled rectifier gate drive with back bias provisions
US3927332A (en) * 1975-02-24 1975-12-16 Rca Corp Drive circuit for controlling conduction of a semiconductor device
JPS5545276A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Gate circuit of gate turn-off thyristor
DE2913974C2 (en) * 1979-04-05 1984-10-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Control circuit for a GTO thyristor
JPS56115851A (en) * 1980-02-14 1981-09-11 Otsupama Kogyo Kk Contactless ignition circuit of internal combustion engine
JPS61230519A (en) * 1985-04-05 1986-10-14 Mitsubishi Electric Corp Drive circuit for gate turn-off thyristor
DE102006038154A1 (en) * 2006-08-16 2008-02-21 Semikron Elektronik Gmbh & Co. Kg Method for pulse transmission and circuit arrangement for carrying out this method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3127522A (en) * 1959-01-30 1964-03-31 Sperry Rand Corp Time controlled switch using saturable core input
DE1197075B (en) * 1961-09-16 1965-07-22 Roehm & Haas Gmbh Process for the production of cyanformamide

Also Published As

Publication number Publication date
BE664146A (en) 1965-09-16
US3348073A (en) 1967-10-17
NL6507460A (en) 1965-12-27
DE1228665B (en) 1966-11-17
SE306559B (en) 1968-12-02
FR1407822A (en) 1965-08-06
CH419283A (en) 1966-08-31

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