GB1101094A - A contact arrangement for a junctionless non-rectifying solid state switching device - Google Patents

A contact arrangement for a junctionless non-rectifying solid state switching device

Info

Publication number
GB1101094A
GB1101094A GB27709/65A GB2770965A GB1101094A GB 1101094 A GB1101094 A GB 1101094A GB 27709/65 A GB27709/65 A GB 27709/65A GB 2770965 A GB2770965 A GB 2770965A GB 1101094 A GB1101094 A GB 1101094A
Authority
GB
United Kingdom
Prior art keywords
state switching
electrode
switching layer
layer
junctionless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27709/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Publication of GB1101094A publication Critical patent/GB1101094A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulators (AREA)
GB27709/65A 1964-07-04 1965-06-30 A contact arrangement for a junctionless non-rectifying solid state switching device Expired GB1101094A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED44895A DE1263197B (de) 1964-07-04 1964-07-04 Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element

Publications (1)

Publication Number Publication Date
GB1101094A true GB1101094A (en) 1968-01-31

Family

ID=7048628

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27709/65A Expired GB1101094A (en) 1964-07-04 1965-06-30 A contact arrangement for a junctionless non-rectifying solid state switching device

Country Status (5)

Country Link
CH (1) CH434484A (enExample)
DE (1) DE1263197B (enExample)
FR (1) FR1441010A (enExample)
GB (1) GB1101094A (enExample)
NL (1) NL6508335A (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB579218A (en) * 1943-07-09 1946-07-26 Standard Telephones Cables Ltd Rectifiers and method of making same
DE860973C (de) * 1944-08-21 1952-12-29 Siemens Ag Detektor
DE970899C (de) * 1948-10-02 1958-11-13 Siemens Ag Zweischichten-Trockengleichrichter
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode

Also Published As

Publication number Publication date
CH434484A (de) 1967-04-30
FR1441010A (fr) 1966-06-03
NL6508335A (enExample) 1966-01-05
DE1263197B (de) 1968-03-14

Similar Documents

Publication Publication Date Title
ES328163A1 (es) Perfeccionamientos en elementos semiconductores.
GB1186076A (en) Improvements in and relating to Monograin Layers
GB1100614A (en) Improvements in or relating to encapsulated electrolytic capacitors
GB942880A (en) An electrical socket
GB1101094A (en) A contact arrangement for a junctionless non-rectifying solid state switching device
JPS5382278A (en) Production of semiconductor device
AT252366B (de) Elektrischer Zweischichten-Sinterkontaktkörper mit großer Schweißsicherheit
NL152699B (nl) Elektrische vermogensschakelaar met een onderbrekingskamer gevuld met een vloeibaar gemaakt dielektricum.
GB1044722A (en) Improvements in and relating to asymmetrical conducting devices
GB1073347A (en) Improvements in or relating to elasto-resistive elements
SE344859B (enExample)
GB950794A (en) Electric wave frequency-converting circuits and systems
GB1302987A (enExample)
ES406020A1 (es) Un dispositivo de micro-ondas.
GB927461A (en) Improvements relating to electrical connections
GB1025732A (en) Improvements in composite electrical circuit units
JPS5383475A (en) Reverse conducting thyristor
JPS5226138A (en) Elastic surface wave device
AU254043B2 (en) Cathode foran electric discharge valve, comprising two superimposed oxide layers
GB1081574A (en) Improvements in or relating to electrical capacitors
ES371972A1 (es) Un dispositivo electronico.
CH384744A (fr) Ensemble comprenant deux parties cylindriques, concentriques, métalliques, isolées électriquement l'une de l'autre
GB1270215A (en) Improvements in or relating to semiconductor components
AU1501462A (en) Cathode foran electric discharge valve, comprising two superimposed oxide layers
SU457409A2 (ru) Электронный высоковакуумный вентиль