GB1097764A - Oxide process - Google Patents

Oxide process

Info

Publication number
GB1097764A
GB1097764A GB11536/65A GB1153665A GB1097764A GB 1097764 A GB1097764 A GB 1097764A GB 11536/65 A GB11536/65 A GB 11536/65A GB 1153665 A GB1153665 A GB 1153665A GB 1097764 A GB1097764 A GB 1097764A
Authority
GB
United Kingdom
Prior art keywords
gas
injection device
stream
primary
spaced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11536/65A
Inventor
John Dennis Herriman
Alan Lawrence Hare
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Titan Products Co Ltd
British Titan Ltd
Original Assignee
British Titan Products Co Ltd
British Titan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Titan Products Co Ltd, British Titan Ltd filed Critical British Titan Products Co Ltd
Priority to GB11536/65A priority Critical patent/GB1097764A/en
Priority to US533527A priority patent/US3464792A/en
Priority to FR53915A priority patent/FR1471684A/en
Priority to DEB86261A priority patent/DE1277209B/en
Priority to JP41016542A priority patent/JPS4930916B1/ja
Priority to NO162174A priority patent/NO116075B/no
Priority to NL6603615A priority patent/NL6603615A/xx
Priority to BE678090D priority patent/BE678090A/xx
Publication of GB1097764A publication Critical patent/GB1097764A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14Methods for preparing oxides or hydroxides in general
    • C01B13/20Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • C01B13/28Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides using a plasma or an electric discharge
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/30Injector mixers
    • B01F25/31Injector mixers in conduits or tubes through which the main component flows
    • B01F25/314Injector mixers in conduits or tubes through which the main component flows wherein additional components are introduced at the circumference of the conduit
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00Compounds of aluminium
    • C01F7/02Aluminium oxide; Aluminium hydroxide; Aluminates
    • C01F7/30Preparation of aluminium oxide or hydroxide by thermal decomposition or by hydrolysis or oxidation of aluminium compounds
    • C01F7/302Hydrolysis or oxidation of gaseous aluminium compounds in the gaseous phase
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/50Solid solutions
    • C01P2002/52Solid solutions containing elements as dopants
    • C01P2002/54Solid solutions containing elements as dopants one element only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Silicon Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

In the production of the oxides of metals, e.g. Ti, Zr, Al, Fe, and of silicon by a vapour phase oxidation of an appropriate halide, a primary stream of gas which may comprise one of the reactants or an inert gas is heated to a high temperature by means of an electric arc, and into this heated stream there is introduced at least one secondary gas comprising oxidizing gas and/or metal or silicon halide, the secondary gas being introduced via an injection device comprising a plurality of inlets from a common supply manifold in such a manner that the secondary gas cools the material forming the <PICT:1097764/C1/1> <PICT:1097764/C1/2> wall of the injection device and is thereby heated before passing into the primary gas stream. Preferably, the injection device surrounds the primary gas stream and the secondary gas is fed through a plurality of inlets spaced around the inner surface of the injection device. The inlets may be evenly spaced, e.g. at a frequency of one inlet/inch. The electric-arc heating device and the injection device are preferably adjacent to each other, the gases passing through an orifice in the heating device directly into the injection device. As shown in Fig. 1, the heated gas stream from the electric arc (not shown) enters chamber 2 from orifice 1 and the secondary gas stream enters via annular channels 5 and 6 cut in the chamber wall through inlets 7 and 8. In Fig. 2 (not shown), channels 5 and 6 are replaced by perforated annular pipes. In Fig. 3, the injection device comprises a series of centrally perforated discs 25, 26 and 27 spaced by spacing washers 28, 29 so as to form a series of annular slits to which secondary gas is fed from manifolds 32 and 34 by perforations 33 and 35. In Fig. 4 (not shown), the degree of heat exchange is improved by replacing solid discs 25 and 26 with hollow annuli, the hollow regions being fitted with baffles so that the secondary gas follows a tortuous path to the injection slits. In Fig. 5, the exit of the electric arc device 51 is cooled by the admission of gas unreactive with the primary stream through tube 65 into annular slit 64. Similarly, the exit end of the injection device may be cooled by a fluid passed through inlet 61 and hollow annulus 60 and out through tube 62. Annulus 60 is spaced from the exit by heat resisting washer 63. In Fig. 6 (not shown), annulus 60 may be perforated on the wall spaced from the exit of the injection device so that additional reactant may be used as cooling fluid and enters chamber 53 parallel to the walls thereof. In the process of the invention the reaction zone may have a temperature of 600 DEG C., preferably 800 DEG C., and the wall of the injection device adjacent the reaction zone is at 500 DEG C., preferably 250 DEG C. The primary gas is at a temperature of at least 2000 DEG C. when it enters the reaction zone, and its energy content is at least 10 kilocalories/gm. mole in excess of that required to heat the gas to 1000 DEG C. The electric-arc utilized for heating the primary gas-stream may be generated by passing an A.C. or D.C. current between electrodes, or it may be a gas plasma formed by inductively coupling the gas to an oscillatory current having a frequency from 10 kilocycles to 25 megacycles per second. The preferred halides are TiCl4, ZrCl4, AlCl3, FeCl3 and SiCl4 with the oxidizing gas preferably comprising free oxygen.
GB11536/65A 1965-03-18 1965-03-18 Oxide process Expired GB1097764A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB11536/65A GB1097764A (en) 1965-03-18 1965-03-18 Oxide process
US533527A US3464792A (en) 1965-03-18 1966-03-11 Method for the production of metal oxide particles by vapor phase oxidation
FR53915A FR1471684A (en) 1965-03-18 1966-03-17 Process for the production of finely divided metal oxides
DEB86261A DE1277209B (en) 1965-03-18 1966-03-18 Method and device for the production of metal oxides
JP41016542A JPS4930916B1 (en) 1965-03-18 1966-03-18
NO162174A NO116075B (en) 1965-03-18 1966-03-18
NL6603615A NL6603615A (en) 1965-03-18 1966-03-18
BE678090D BE678090A (en) 1965-03-18 1966-03-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB11536/65A GB1097764A (en) 1965-03-18 1965-03-18 Oxide process

Publications (1)

Publication Number Publication Date
GB1097764A true GB1097764A (en) 1968-01-03

Family

ID=9988034

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11536/65A Expired GB1097764A (en) 1965-03-18 1965-03-18 Oxide process

Country Status (5)

Country Link
JP (1) JPS4930916B1 (en)
BE (1) BE678090A (en)
DE (1) DE1277209B (en)
GB (1) GB1097764A (en)
NO (1) NO116075B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589849A1 (en) * 1985-11-09 1987-05-15 Tioxide Group Plc FINELY DIVIDED ALUMINUM OXIDE AND PROCESS FOR PRODUCING THE SAME
US5599519A (en) * 1992-08-10 1997-02-04 Tioxide Group Services Limited Oxidation of titanium tetrachloride to form titanium dioxide

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616884B1 (en) * 1987-06-19 1991-05-10 Air Liquide PROCESS FOR THE TREATMENT OF GASEOUS EFFLUENTS FROM THE MANUFACTURE OF ELECTRONIC COMPONENTS AND AN INCINERATION APPARATUS FOR IMPLEMENTING SAME
KR20230133915A (en) * 2021-05-17 2023-09-19 가부시끼가이샤 레조낙 Titanium oxide particles and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589849A1 (en) * 1985-11-09 1987-05-15 Tioxide Group Plc FINELY DIVIDED ALUMINUM OXIDE AND PROCESS FOR PRODUCING THE SAME
US5599519A (en) * 1992-08-10 1997-02-04 Tioxide Group Services Limited Oxidation of titanium tetrachloride to form titanium dioxide

Also Published As

Publication number Publication date
BE678090A (en) 1966-09-19
JPS4930916B1 (en) 1974-08-16
DE1277209B (en) 1968-09-12
NO116075B (en) 1969-01-27

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