GB1096019A - Electrically isolated semiconductor devices and method of producing electrically isolated semiconductor devices on common crystalline substrate - Google Patents
Electrically isolated semiconductor devices and method of producing electrically isolated semiconductor devices on common crystalline substrateInfo
- Publication number
- GB1096019A GB1096019A GB4925664A GB4925664A GB1096019A GB 1096019 A GB1096019 A GB 1096019A GB 4925664 A GB4925664 A GB 4925664A GB 4925664 A GB4925664 A GB 4925664A GB 1096019 A GB1096019 A GB 1096019A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- layer
- substrate
- slots
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 5
- 239000002245 particle Substances 0.000 abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 230000000873 masking effect Effects 0.000 abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000005049 silicon tetrachloride Substances 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- -1 Si3N4 Chemical compound 0.000 abstract 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000002178 crystalline material Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
<PICT:1096019/C6-C7/1> <PICT:1096019/C6-C7/2> A plurality of electrically isolated semi-conductor regions are carried by a common crystalline substrate and are spaced apart by a grid of crystalline material which may be integral with the substrate. The isolation between the regions and the substrate and the region and the grid is provided by one or more films of insulating material. To produce the arrangement of Fig. 9 a semi-conductor body containing N and N+ layers 10, 11 is provided with a patterned masking layer 20 on the N+ layer. Deep slots are then etched into the body while retaining a unitary structure. The body is then cleaned and an insulating layer 201 formed on the N+ layer and on the walls of the slots. The substrate material is now deposited to fill the slots and form the layer 30 the surface of which is lapped parallel to the surface of the insulation 201. The surface of the N type layer 10 is now lapped parallel to the surface of the substrate and to sufficient depth to separate the original semi-conductor body into isolated regions 35 in which circuit elements are to be produced. The masking layer 20 may be an oxide or nitride layer patterned by photo-resist techniques or the layer may be simply photo-resist material. The embodiment of Fig. 16 may have silicon N and N+ layers 10, 11, a silicon substrate, and silicon dioxide insulating layers. The N+ layer of the starting body 10, 11 is coated with silicon dioxide 201, and a substantially intrinsic silicon substrate layer 30 is deposited on this. An upper silicon masking layer (36) is produced on the N type layer 10 and slots etched through the semi-conductor body to the oxide layer 201. Further silicon dioxide 37 is deposited to coat the walls of the slots and silicon carbide particles are formed on this material to act as nucleating centres when the slots are filled with polycrystalline silicon 40. The upper insulating layer (36) is then lapped off to ready the assembly for further processing. In general suitable substrate materials are silicon, germanium, alumina, and beryllia; suitable materials for the insulating films are silicon dioxide, a silicon nitride (e.g. Si3N4, Si3N2, or SiN), germanium, cadmium sulphide, and intermetallic compounds such as gallium arsenide, gallium phosphide, and indium antimonide. Specific etchants are described which attack some of the semi-conductors listed rather than a silicon oxide or nitride masking layer. Methods of forming silicon dioxide and nitride coatings on silicon and other semi-conductors are described. Polycrystalline silicon may be grown readily on a silicon dioxide film by first depositing carbon on the latter from a colloidal graphite suspension or by the decomposition of a hydrocarbon, by heating the oxide to form particles of silicon carbide on its surface, and by passing over the heated layer hydrogen to which a large quantity of silicon tetrachloride is added - the silicon carbide particles act as nucleating points for the deposited silicon.ALSO:Crystalline silicon is grown on a silicon dioxide film by first depositing carbon on the latter from a colloidal graphite suspension or by the decomposition of a hydrocarbon, then heating the oxide to form particles of silicon carbide on its surface, and passing over the heated layer hydrogen to which a large quantity of silicon tetrachloride is added-the silicon carbon particles act as nucleating points for the deposited silicon.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32799063A | 1963-12-04 | 1963-12-04 | |
| US33971764A | 1964-01-23 | 1964-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1096019A true GB1096019A (en) | 1967-12-20 |
Family
ID=26986163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4925664A Expired GB1096019A (en) | 1963-12-04 | 1964-12-03 | Electrically isolated semiconductor devices and method of producing electrically isolated semiconductor devices on common crystalline substrate |
Country Status (3)
| Country | Link |
|---|---|
| CA (1) | CA942893A (en) |
| DK (1) | DK116524B (en) |
| GB (1) | GB1096019A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0182032A2 (en) * | 1984-09-19 | 1986-05-28 | Kabushiki Kaisha Toshiba | SoI semiconductor device and method for producing it |
-
1964
- 1964-10-24 CA CA914,813A patent/CA942893A/en not_active Expired
- 1964-12-03 GB GB4925664A patent/GB1096019A/en not_active Expired
- 1964-12-04 DK DK597864A patent/DK116524B/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0182032A2 (en) * | 1984-09-19 | 1986-05-28 | Kabushiki Kaisha Toshiba | SoI semiconductor device and method for producing it |
| EP0182032A3 (en) * | 1984-09-19 | 1988-03-23 | Kabushiki Kaisha Toshiba | Soi semiconductor device and method for producing it |
Also Published As
| Publication number | Publication date |
|---|---|
| CA942893A (en) | 1974-02-26 |
| DK116524B (en) | 1970-01-19 |
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