DK116524B - Semiconductor element consisting of a common insulating crystalline substrate and a plurality of spaced apart monocrystalline semiconductor segments and a method of making the same. - Google Patents
Semiconductor element consisting of a common insulating crystalline substrate and a plurality of spaced apart monocrystalline semiconductor segments and a method of making the same.Info
- Publication number
- DK116524B DK116524B DK597864A DK597864A DK116524B DK 116524 B DK116524 B DK 116524B DK 597864 A DK597864 A DK 597864A DK 597864 A DK597864 A DK 597864A DK 116524 B DK116524 B DK 116524B
- Authority
- DK
- Denmark
- Prior art keywords
- making
- spaced apart
- same
- crystalline substrate
- element consisting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32799063A | 1963-12-04 | 1963-12-04 | |
US33971764A | 1964-01-23 | 1964-01-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK116524B true DK116524B (en) | 1970-01-19 |
Family
ID=26986163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK597864A DK116524B (en) | 1963-12-04 | 1964-12-04 | Semiconductor element consisting of a common insulating crystalline substrate and a plurality of spaced apart monocrystalline semiconductor segments and a method of making the same. |
Country Status (3)
Country | Link |
---|---|
CA (1) | CA942893A (en) |
DK (1) | DK116524B (en) |
GB (1) | GB1096019A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6173345A (en) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | Semiconductor device |
-
1964
- 1964-10-24 CA CA914,813A patent/CA942893A/en not_active Expired
- 1964-12-03 GB GB4925664A patent/GB1096019A/en not_active Expired
- 1964-12-04 DK DK597864A patent/DK116524B/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB1096019A (en) | 1967-12-20 |
CA942893A (en) | 1974-02-26 |
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