GB1094931A - A hydrothermal process for growing crystals having the structure of beryl - Google Patents
A hydrothermal process for growing crystals having the structure of berylInfo
- Publication number
- GB1094931A GB1094931A GB6744/65A GB674465A GB1094931A GB 1094931 A GB1094931 A GB 1094931A GB 6744/65 A GB6744/65 A GB 6744/65A GB 674465 A GB674465 A GB 674465A GB 1094931 A GB1094931 A GB 1094931A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- beryl
- oxide
- seed crystal
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1026—Alloys containing non-metals starting from a solution or a suspension of (a) compound(s) of at least one of the alloy constituents
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/34—Silicates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A single crystal of beryl is grown by subjecting an aqueous mixture containing Be, Al, and Si oxides, an alkali metal or ammonum halide and a seed crystal, to a temperature of at least 425 DEG C. and a pressure of at least 6000 lb./in.2 (422 kg./cm.2). The oxide sources may be: crystalline or fused quartz or porous SiO2 glass; sapphire, gibbsite, or Al(OH)3 p.p.t.d. from Al(NO3)3; and Be(OH)2 or BeO; preferably in the proportions 3BeO.Al2O3.6SiO2. The halide media may be acidic (pH from 0.2 to below 7), e.g. NaCl, NH4F or, preferably 0.1N-11NNH4Cl, adding HCl if necessary; or alkaline (pH from above 7 to 12.5), e.g. 0.01N-0.02NKF or 0.01N-0.3N(NH4F + NH4OH). The seed crystal may be natural or synthetic, e.g. cut from a previous growth, and various axial orientations are exemplified. The reaction vessel may be Ni-steel alloy and may be lined with Ag, Pt or Au. Transition metal or rare earth metal ions, e.g. Cr, Fe, Ni, Nd, may be incorporated into the crystal by adding the appropriate oxide, hydroxide, nitrate, chloride, or sulphate to the reaction mixture, in amounts of 0.01-11 weight per cent based on the theoretical weight of beryl, to give a final content of 0.005-8 per cent by weight of the crystal. The material of an unlined vessel may also supply ions (e.g. Fe + Ni). The lower part of the reaction vessel, containing Be and Al oxides, may be maintained 10-100 DEG C. higher than the upper part, in which the SiO2 is suspended (e.g. by wire or baskets), with the seed suspended in the middle. Alternate layers of oxide mixture and seed crystal may be arranged. Temperatures up to 800 DEG C. and pressures up to 30,000 lb./in.2 are referred to.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34556264A | 1964-02-18 | 1964-02-18 | |
US34560564A | 1964-02-18 | 1964-02-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1094931A true GB1094931A (en) | 1967-12-13 |
Family
ID=26994450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB6744/65A Expired GB1094931A (en) | 1964-02-18 | 1965-02-17 | A hydrothermal process for growing crystals having the structure of beryl |
Country Status (4)
Country | Link |
---|---|
AT (1) | AT254824B (en) |
CH (1) | CH439231A (en) |
DE (1) | DE1592181B2 (en) |
GB (1) | GB1094931A (en) |
-
1965
- 1965-02-17 GB GB6744/65A patent/GB1094931A/en not_active Expired
- 1965-02-18 CH CH227865A patent/CH439231A/en unknown
- 1965-02-18 DE DE19651592181 patent/DE1592181B2/en not_active Withdrawn
- 1965-02-18 AT AT144565A patent/AT254824B/en active
Also Published As
Publication number | Publication date |
---|---|
CH439231A (en) | 1967-07-15 |
DE1592181A1 (en) | 1970-02-26 |
DE1592181B2 (en) | 1970-11-05 |
AT254824B (en) | 1967-06-12 |
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