GB1096584A - Improvements in or relating to a method of growing oxide crystals - Google Patents
Improvements in or relating to a method of growing oxide crystalsInfo
- Publication number
- GB1096584A GB1096584A GB51283/64A GB5128364A GB1096584A GB 1096584 A GB1096584 A GB 1096584A GB 51283/64 A GB51283/64 A GB 51283/64A GB 5128364 A GB5128364 A GB 5128364A GB 1096584 A GB1096584 A GB 1096584A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chamber
- gas
- crystal
- seed
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method of growing a crystal of an oxide of a metal selected from aluminium, titanium, silicon, chromium, nickel, magnesium, zirconium, beryllium, niobium and lead comprises introducing into a chamber a crystalline seed of the same metal oxide as the desired metal oxide and thereafter simultaneously passing into the chamber a gaseous halide of the metal, e.g. the chloride, hydrogen gas, and carbon dioxide gas, and maintaining the temperature and pressure within the chamber at values sufficient for the gases therein to react and to form with and upon the seed the desired crystal product. The process is described with reference to the production of single crystals using a single-crystal seed, and the production of a polycrystalline product using a polycrystalline seed, wherein the term "polycrystalline" means a solid crystalline product which does not have fibres protruding therefrom and is a conglomerated aggregate of single crystals. Carbon monoxide and/or argon gas may also be fed to the chamber to control the rate of reaction. The gaseous metal halide is preferably prepared by passing halogen gas over the metal, e.g. by passing gaseous chlorine over aluminium of 99.999% purity. Argon gas may be mixed with the halide before passage to the reaction chamber. The reaction chamber is preferably a furnace maintained at a temperature of at least 1500 DEG C. and a pressure of 1 to 50 torr. The ratio by volume of hydrogen and carbon dioxide gases passed to the chamber is preferably 4:1. When the crystal has grown to a desired size the flow of gases is discontinued and the chamber flushed with an inert gas to restore it to near atmospheric pressure. The process is described particularly with reference to the production of ruby, sapphire and silica crystals. In the production of ruby crystals chromium chloride gas is passed into the chamber with the aluminium chloride such that 400 to 10,000 p.p.m. of chromium are incorporated into the crystal lattice.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US330663A US3365316A (en) | 1963-12-16 | 1963-12-16 | Method of epitaxially growing metal oxide single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1096584A true GB1096584A (en) | 1967-12-29 |
Family
ID=23290758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51283/64A Expired GB1096584A (en) | 1963-12-16 | 1964-12-16 | Improvements in or relating to a method of growing oxide crystals |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3365316A (en) |
| GB (1) | GB1096584A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3449071A (en) * | 1965-09-28 | 1969-06-10 | Lexington Lab Inc | Preparation of alumina crystals from a vapor phase reaction by monitoring the spectral scattering of light |
| US3536519A (en) * | 1967-08-31 | 1970-10-27 | Cava Ind | Whiskers |
| GB1079306A (en) * | 1970-02-09 | 1967-08-16 | Siemens Ag | Improvements in or relating to the manufacture of filiform single crystals |
| US3661676A (en) * | 1970-05-04 | 1972-05-09 | Us Army | Production of single crystal aluminum oxide |
| US3947562A (en) * | 1975-04-04 | 1976-03-30 | Hepworth & Grandage Limited | Production of a form of alumina whiskers |
| JPS6047202B2 (en) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | Super hard high purity oriented polycrystalline silicon nitride |
| US4920014A (en) * | 1987-02-27 | 1990-04-24 | Sumitomo Metal Mining Co., Ltd. | Zirconia film and process for preparing it |
| US8012533B2 (en) * | 2005-02-04 | 2011-09-06 | Oxane Materials, Inc. | Composition and method for making a proppant |
| CN1911512B (en) * | 2005-07-07 | 2011-12-07 | 独立行政法人产业技术综合研究所 | Fluorination catalysts, method for their preparation, and method for producing fluorinated compounds using the catalysts |
| US7955569B2 (en) * | 2007-03-14 | 2011-06-07 | Hubert Patrovsky | Metal halide reactor for CVD and method |
| JP4926835B2 (en) * | 2007-06-05 | 2012-05-09 | タテホ化学工業株式会社 | Magnesium oxide powder |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB245132A (en) * | 1924-12-27 | 1927-01-06 | Robert Werner Grahmann | Process for the producing of homogeneous synthetic precious stones |
| US2364554A (en) * | 1941-02-26 | 1944-12-05 | Hugh W Sanford | Drop bottom door latching equipment for mine cars |
| US3130008A (en) * | 1949-11-23 | 1964-04-21 | Cabot Corp | Method of preparing metallic oxides by hydrolysis of metallic halides |
| US2792287A (en) * | 1956-04-04 | 1957-05-14 | Nat Lead Co | Synthetic rutile crystal and method for making same |
| ES244660A1 (en) * | 1958-10-14 | 1959-03-16 | Compania Nac Calvo Sotelo | Improvements in or relating to the manufacture of anhydrous aluminium chloride |
| GB968832A (en) * | 1959-12-09 | 1964-09-02 | British Titan Products | Improvements in or relating to production of titanium dioxide |
| US3094385A (en) * | 1960-10-13 | 1963-06-18 | Gen Electric | Method for the preparation of alumina fibers |
-
1963
- 1963-12-16 US US330663A patent/US3365316A/en not_active Expired - Lifetime
-
1964
- 1964-12-16 GB GB51283/64A patent/GB1096584A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3365316A (en) | 1968-01-23 |
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