GB1081570A - Tunnel diode memory cell - Google Patents

Tunnel diode memory cell

Info

Publication number
GB1081570A
GB1081570A GB1389566A GB1389566A GB1081570A GB 1081570 A GB1081570 A GB 1081570A GB 1389566 A GB1389566 A GB 1389566A GB 1389566 A GB1389566 A GB 1389566A GB 1081570 A GB1081570 A GB 1081570A
Authority
GB
United Kingdom
Prior art keywords
diode
cell
tunnel diode
tunnel
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1389566A
Other languages
English (en)
Inventor
Robert Van Zurk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1081570A publication Critical patent/GB1081570A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
GB1389566A 1965-04-02 1966-03-29 Tunnel diode memory cell Expired GB1081570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11797A FR1441559A (fr) 1965-04-02 1965-04-02 Cellule de mémoire à diode tunnel

Publications (1)

Publication Number Publication Date
GB1081570A true GB1081570A (en) 1967-08-31

Family

ID=8575570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1389566A Expired GB1081570A (en) 1965-04-02 1966-03-29 Tunnel diode memory cell

Country Status (8)

Country Link
BE (1) BE678565A (enrdf_load_stackoverflow)
CH (1) CH454226A (enrdf_load_stackoverflow)
DE (1) DE1499612B1 (enrdf_load_stackoverflow)
ES (1) ES324967A1 (enrdf_load_stackoverflow)
FR (1) FR1441559A (enrdf_load_stackoverflow)
GB (1) GB1081570A (enrdf_load_stackoverflow)
LU (1) LU50810A1 (enrdf_load_stackoverflow)
NL (1) NL6604315A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953549A (en) * 1960-08-10 1964-03-25 Ass Elect Ind Improvements relating to binary matrix stores

Also Published As

Publication number Publication date
BE678565A (enrdf_load_stackoverflow) 1966-09-01
LU50810A1 (enrdf_load_stackoverflow) 1966-06-01
ES324967A1 (es) 1967-04-01
CH454226A (fr) 1968-04-15
NL6604315A (enrdf_load_stackoverflow) 1966-10-03
DE1499612B1 (de) 1970-11-12
FR1441559A (fr) 1966-06-10

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