GB1077619A - A process for the production of intermetallic superconducting compounds - Google Patents

A process for the production of intermetallic superconducting compounds

Info

Publication number
GB1077619A
GB1077619A GB26674/65A GB2667465A GB1077619A GB 1077619 A GB1077619 A GB 1077619A GB 26674/65 A GB26674/65 A GB 26674/65A GB 2667465 A GB2667465 A GB 2667465A GB 1077619 A GB1077619 A GB 1077619A
Authority
GB
United Kingdom
Prior art keywords
vanadium
component
niobium
tantalum
dicyclopentadienyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26674/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1077619A publication Critical patent/GB1077619A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0184Manufacture or treatment of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Two component superconducting intermetallic compounds which contain as one component one of the metals vanadium, niobium or tantalum are prepared by contacting in vapour phase and in the absence of oxygen a heat-decomposable organic compound of said one component and a heat-decomposable organic compound of the other component in suitable proportions with a support material heated to a temperature sufficient to decompose said compounds, thereby depositing on said support material a coating containing about 75 atom-% of the metal of said one component and 25 atom-% of the other component and thereafter heating the coated support at 700-1200 DEG C. in vacuo or in a protective gas to form the desired intermetallic compound. The vanadium, niobium or tantalum compound may be e.g. dicyclopentadienyl niobium, dicyclopentadienyl vanadium and dicyclopentadienyl tantalum and dibenzene vanadium and cyclopentadienyl-vanadium tetracarbonyl. The other component may be employed as an alkyl compound e.g. gallium triethyl, gallium n-butyl and tin-tetramethyl and tetraethyl. The compounds may be vaporized outside the reaction zone and conveyed by a carrier gas such as hydrogen, argon and nitrogen into the reaction zone. The support materials may be oxygen-free electrolytic copper, low carbon iron, aluminium, nickel or a steel-nickel alloy containing 10% (by weight) of nickel. Air must be removed from the reaction zone before coating commences by evacuation or replacement with an inert gas. The walls of the reaction zone may be heated to 100-300 DEG C. e.g. by means of an electric furnace or by means of heating liquids such as glycerine or (paraffin oil) passed in tubes around the zone. The support may be in the form of a wire or strip and heated by passage of an electric current or by high-frequency heating. After coating the heating may be for 5 to 20 minutes.ALSO:Two - component superconducting intermetallic compounds which contain as one component one of the metals vanadium, niobium or tantalum are prepared by contacting in vapour phase and in the absence of oxygen a heat-decomposable organic compound of said one component and a heat-decomposable organic compound of the other component in suitable proportions with a support material heated to a temperature sufficient to decompose said compounds, thereby depositing on said support material a coating containing about 75 atom-per cent of the metal of said one component and 25 atom-per cent of the other component and thereafter heating the coated support at 700-1200 DEG C. in vacuo or in a protective gas to form the desired intermetallic compound. The vanadium, niobium or tantalum compound may be, e.g dicyclopentadienyl niobium, dicyclopentadienyl vanadium and dicyclopentadienyl tantalum and dibenzene vanadium and cyclopentadienyl - vanadium tetracarbonyl. The other component may be employed as an alkyl compound, e.g. triethyl gallium, n-butyl gallium and tetramethyl- and tetraethyl-tin. Intermetallic compounds specified include niobium-gallium, niobium-aluminium, niobium-indium, vanadium-tin, tantalum tin and vanadium-gallium. The compounds may be vaporized outside the reaction zone and conveyed by a carrier gas such as hydrogen, argon and nitrogen into the reaction zone. The support materials may be oxygen-free electrolytic copper, low carbon iron, aluminium, nickel or a steel-nickel alloy containing 10% (by weight) of nickel. Air must be removed from the reaction zone before coating commences, by evacuation or replacement with an inert gas. The walls of the reaction zone may be heated to 100-300 DEG C., e.g. by means of an electric furnace or by means of heating liquids such as glycerine or liquid paraffin passed in tubes around the zone. The support may be in the form of a wire or strip and heated by passage of an electric current or by high-frequency heating. After coating the heating may be for 5 to 20 minutes.ALSO:Dicyclopentadienyl - niobium and dicyclopentadienyl-tantalum are prepared by the method of Wilkinson, Cotton and Birmingham (J. Inorg. and Nuc. Chem. (1956) (2, 95-113) from niobium trichloride or tantalum trichloride. These compounds, and others including dibenzene vanadium and cyclopentadienyl vanadium tetracarbonyl, may be used for the thermal deposition of the metal.
GB26674/65A 1964-06-25 1965-06-23 A process for the production of intermetallic superconducting compounds Expired GB1077619A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0091688 1964-06-25

Publications (1)

Publication Number Publication Date
GB1077619A true GB1077619A (en) 1967-08-02

Family

ID=7516671

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26674/65A Expired GB1077619A (en) 1964-06-25 1965-06-23 A process for the production of intermetallic superconducting compounds

Country Status (3)

Country Link
FR (1) FR1434791A (en)
GB (1) GB1077619A (en)
NL (1) NL6505307A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177119A (en) * 1985-06-26 1987-01-14 Plessey Co Plc Metal-organic chemical vapour deposition
GB2193228A (en) * 1986-06-20 1988-02-03 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
WO1990008844A1 (en) * 1989-02-02 1990-08-09 National Research Development Corporation Forming a metal coating
CN108315689A (en) * 2018-01-10 2018-07-24 广州市芸霖材料表面技术有限公司 A kind of TD treatment process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177119A (en) * 1985-06-26 1987-01-14 Plessey Co Plc Metal-organic chemical vapour deposition
GB2177119B (en) * 1985-06-26 1989-04-26 Plessey Co Plc Organometallic chemical vapour deposition
GB2193228A (en) * 1986-06-20 1988-02-03 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
GB2193228B (en) * 1986-06-20 1991-02-20 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
WO1990008844A1 (en) * 1989-02-02 1990-08-09 National Research Development Corporation Forming a metal coating
CN108315689A (en) * 2018-01-10 2018-07-24 广州市芸霖材料表面技术有限公司 A kind of TD treatment process
CN108315689B (en) * 2018-01-10 2024-04-19 东莞市柯霖金属材料表面技术有限公司 TD treatment process

Also Published As

Publication number Publication date
NL6505307A (en) 1965-12-27
FR1434791A (en) 1966-04-08

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