GB1077619A - A process for the production of intermetallic superconducting compounds - Google Patents
A process for the production of intermetallic superconducting compoundsInfo
- Publication number
- GB1077619A GB1077619A GB26674/65A GB2667465A GB1077619A GB 1077619 A GB1077619 A GB 1077619A GB 26674/65 A GB26674/65 A GB 26674/65A GB 2667465 A GB2667465 A GB 2667465A GB 1077619 A GB1077619 A GB 1077619A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vanadium
- component
- niobium
- tantalum
- dicyclopentadienyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 8
- -1 dicyclopentadienyl niobium Chemical compound 0.000 abstract 8
- 238000010438 heat treatment Methods 0.000 abstract 8
- 229910052758 niobium Inorganic materials 0.000 abstract 7
- 239000010955 niobium Substances 0.000 abstract 7
- 239000011248 coating agent Substances 0.000 abstract 6
- 238000000576 coating method Methods 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 6
- 229910000765 intermetallic Inorganic materials 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 229910052715 tantalum Inorganic materials 0.000 abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 4
- 229910052733 gallium Inorganic materials 0.000 abstract 4
- 229910052759 nickel Inorganic materials 0.000 abstract 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 4
- 150000002894 organic compounds Chemical class 0.000 abstract 4
- 229910052720 vanadium Inorganic materials 0.000 abstract 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 abstract 4
- CHGABJRZTFUHDT-UHFFFAOYSA-N 1-(1-benzofuran-3-yl)ethanone Chemical group C1=CC=C2C(C(=O)C)=COC2=C1 CHGABJRZTFUHDT-UHFFFAOYSA-N 0.000 abstract 3
- YWTIBPUNCKNKNA-UHFFFAOYSA-N benzene;vanadium Chemical compound [V].C1=CC=CC=C1.C1=CC=CC=C1 YWTIBPUNCKNKNA-UHFFFAOYSA-N 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- KTKDULBCFYEWFV-UHFFFAOYSA-N cyclopenta-1,3-diene;vanadium(2+) Chemical compound [V+2].C1C=CC=[C-]1.C1C=CC=[C-]1 KTKDULBCFYEWFV-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 235000011187 glycerol Nutrition 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- QMQXDJATSGGYDR-UHFFFAOYSA-N methylidyneiron Chemical compound [C].[Fe] QMQXDJATSGGYDR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 2
- 150000003482 tantalum compounds Chemical class 0.000 abstract 2
- IZSHZLKNFQAAKX-UHFFFAOYSA-N 5-cyclopenta-2,4-dien-1-ylcyclopenta-1,3-diene Chemical group C1=CC=CC1C1C=CC=C1 IZSHZLKNFQAAKX-UHFFFAOYSA-N 0.000 abstract 1
- 229920000742 Cotton Polymers 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000005662 Paraffin oil Substances 0.000 abstract 1
- RZVJAVOTAADABK-UHFFFAOYSA-N [Nb].[In] Chemical compound [Nb].[In] RZVJAVOTAADABK-UHFFFAOYSA-N 0.000 abstract 1
- UKUJCSBWRBWNAV-UHFFFAOYSA-N [Sn].[V] Chemical compound [Sn].[V] UKUJCSBWRBWNAV-UHFFFAOYSA-N 0.000 abstract 1
- WMLOOYUARVGOPC-UHFFFAOYSA-N [Ta].[Sn] Chemical compound [Ta].[Sn] WMLOOYUARVGOPC-UHFFFAOYSA-N 0.000 abstract 1
- BPAABJIBIBFRST-UHFFFAOYSA-N [V].[V].[V].[Ga] Chemical compound [V].[V].[V].[Ga] BPAABJIBIBFRST-UHFFFAOYSA-N 0.000 abstract 1
- PEQFPKIXNHTCSJ-UHFFFAOYSA-N alumane;niobium Chemical compound [AlH3].[Nb] PEQFPKIXNHTCSJ-UHFFFAOYSA-N 0.000 abstract 1
- 229940057995 liquid paraffin Drugs 0.000 abstract 1
- VPDYSPXEGTXWEU-UHFFFAOYSA-K niobium(3+);trichloride Chemical compound Cl[Nb](Cl)Cl VPDYSPXEGTXWEU-UHFFFAOYSA-K 0.000 abstract 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 abstract 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical group C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002207 thermal evaporation Methods 0.000 abstract 1
- UDKRLEXYBPHRQF-UHFFFAOYSA-K trichlorotantalum Chemical compound Cl[Ta](Cl)Cl UDKRLEXYBPHRQF-UHFFFAOYSA-K 0.000 abstract 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 abstract 1
- 229910000999 vanadium-gallium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0184—Manufacture or treatment of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Two component superconducting intermetallic compounds which contain as one component one of the metals vanadium, niobium or tantalum are prepared by contacting in vapour phase and in the absence of oxygen a heat-decomposable organic compound of said one component and a heat-decomposable organic compound of the other component in suitable proportions with a support material heated to a temperature sufficient to decompose said compounds, thereby depositing on said support material a coating containing about 75 atom-% of the metal of said one component and 25 atom-% of the other component and thereafter heating the coated support at 700-1200 DEG C. in vacuo or in a protective gas to form the desired intermetallic compound. The vanadium, niobium or tantalum compound may be e.g. dicyclopentadienyl niobium, dicyclopentadienyl vanadium and dicyclopentadienyl tantalum and dibenzene vanadium and cyclopentadienyl-vanadium tetracarbonyl. The other component may be employed as an alkyl compound e.g. gallium triethyl, gallium n-butyl and tin-tetramethyl and tetraethyl. The compounds may be vaporized outside the reaction zone and conveyed by a carrier gas such as hydrogen, argon and nitrogen into the reaction zone. The support materials may be oxygen-free electrolytic copper, low carbon iron, aluminium, nickel or a steel-nickel alloy containing 10% (by weight) of nickel. Air must be removed from the reaction zone before coating commences by evacuation or replacement with an inert gas. The walls of the reaction zone may be heated to 100-300 DEG C. e.g. by means of an electric furnace or by means of heating liquids such as glycerine or (paraffin oil) passed in tubes around the zone. The support may be in the form of a wire or strip and heated by passage of an electric current or by high-frequency heating. After coating the heating may be for 5 to 20 minutes.ALSO:Two - component superconducting intermetallic compounds which contain as one component one of the metals vanadium, niobium or tantalum are prepared by contacting in vapour phase and in the absence of oxygen a heat-decomposable organic compound of said one component and a heat-decomposable organic compound of the other component in suitable proportions with a support material heated to a temperature sufficient to decompose said compounds, thereby depositing on said support material a coating containing about 75 atom-per cent of the metal of said one component and 25 atom-per cent of the other component and thereafter heating the coated support at 700-1200 DEG C. in vacuo or in a protective gas to form the desired intermetallic compound. The vanadium, niobium or tantalum compound may be, e.g dicyclopentadienyl niobium, dicyclopentadienyl vanadium and dicyclopentadienyl tantalum and dibenzene vanadium and cyclopentadienyl - vanadium tetracarbonyl. The other component may be employed as an alkyl compound, e.g. triethyl gallium, n-butyl gallium and tetramethyl- and tetraethyl-tin. Intermetallic compounds specified include niobium-gallium, niobium-aluminium, niobium-indium, vanadium-tin, tantalum tin and vanadium-gallium. The compounds may be vaporized outside the reaction zone and conveyed by a carrier gas such as hydrogen, argon and nitrogen into the reaction zone. The support materials may be oxygen-free electrolytic copper, low carbon iron, aluminium, nickel or a steel-nickel alloy containing 10% (by weight) of nickel. Air must be removed from the reaction zone before coating commences, by evacuation or replacement with an inert gas. The walls of the reaction zone may be heated to 100-300 DEG C., e.g. by means of an electric furnace or by means of heating liquids such as glycerine or liquid paraffin passed in tubes around the zone. The support may be in the form of a wire or strip and heated by passage of an electric current or by high-frequency heating. After coating the heating may be for 5 to 20 minutes.ALSO:Dicyclopentadienyl - niobium and dicyclopentadienyl-tantalum are prepared by the method of Wilkinson, Cotton and Birmingham (J. Inorg. and Nuc. Chem. (1956) (2, 95-113) from niobium trichloride or tantalum trichloride. These compounds, and others including dibenzene vanadium and cyclopentadienyl vanadium tetracarbonyl, may be used for the thermal deposition of the metal.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0091688 | 1964-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1077619A true GB1077619A (en) | 1967-08-02 |
Family
ID=7516671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB26674/65A Expired GB1077619A (en) | 1964-06-25 | 1965-06-23 | A process for the production of intermetallic superconducting compounds |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1434791A (en) |
| GB (1) | GB1077619A (en) |
| NL (1) | NL6505307A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2177119A (en) * | 1985-06-26 | 1987-01-14 | Plessey Co Plc | Metal-organic chemical vapour deposition |
| GB2193228A (en) * | 1986-06-20 | 1988-02-03 | Raytheon Co | Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials |
| WO1990008844A1 (en) * | 1989-02-02 | 1990-08-09 | National Research Development Corporation | Forming a metal coating |
| CN108315689A (en) * | 2018-01-10 | 2018-07-24 | 广州市芸霖材料表面技术有限公司 | A kind of TD treatment process |
-
1965
- 1965-04-26 NL NL6505307A patent/NL6505307A/xx unknown
- 1965-05-25 FR FR18392A patent/FR1434791A/en not_active Expired
- 1965-06-23 GB GB26674/65A patent/GB1077619A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2177119A (en) * | 1985-06-26 | 1987-01-14 | Plessey Co Plc | Metal-organic chemical vapour deposition |
| GB2177119B (en) * | 1985-06-26 | 1989-04-26 | Plessey Co Plc | Organometallic chemical vapour deposition |
| GB2193228A (en) * | 1986-06-20 | 1988-02-03 | Raytheon Co | Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials |
| GB2193228B (en) * | 1986-06-20 | 1991-02-20 | Raytheon Co | Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials |
| WO1990008844A1 (en) * | 1989-02-02 | 1990-08-09 | National Research Development Corporation | Forming a metal coating |
| CN108315689A (en) * | 2018-01-10 | 2018-07-24 | 广州市芸霖材料表面技术有限公司 | A kind of TD treatment process |
| CN108315689B (en) * | 2018-01-10 | 2024-04-19 | 东莞市柯霖金属材料表面技术有限公司 | TD treatment process |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6505307A (en) | 1965-12-27 |
| FR1434791A (en) | 1966-04-08 |
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