CN108315689B - TD treatment process - Google Patents
TD treatment process Download PDFInfo
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- CN108315689B CN108315689B CN201810023751.3A CN201810023751A CN108315689B CN 108315689 B CN108315689 B CN 108315689B CN 201810023751 A CN201810023751 A CN 201810023751A CN 108315689 B CN108315689 B CN 108315689B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000000171 quenching effect Effects 0.000 claims abstract description 34
- 238000010791 quenching Methods 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000005496 tempering Methods 0.000 claims abstract description 7
- 230000035484 reaction time Effects 0.000 claims abstract description 6
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 43
- 238000001816 cooling Methods 0.000 claims description 38
- 239000012159 carrier gas Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 26
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 12
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005571 horizontal transmission Effects 0.000 claims description 9
- 238000004321 preservation Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 230000005570 vertical transmission Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910021552 Vanadium(IV) chloride Inorganic materials 0.000 claims description 4
- JTJFQBNJBPPZRI-UHFFFAOYSA-J vanadium tetrachloride Chemical compound Cl[V](Cl)(Cl)Cl JTJFQBNJBPPZRI-UHFFFAOYSA-J 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 abstract description 15
- 238000000576 coating method Methods 0.000 abstract description 10
- 229910021538 borax Inorganic materials 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 8
- 239000004328 sodium tetraborate Substances 0.000 abstract description 8
- 235000010339 sodium tetraborate Nutrition 0.000 abstract description 8
- 238000003912 environmental pollution Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 125000004429 atom Chemical group 0.000 description 18
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
- C23C10/26—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions more than one element being diffused
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/18—Hardening; Quenching with or without subsequent tempering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
The invention relates to the field of TD (time division) treatment processes, in particular to a TD treatment process, which comprises the following steps of: 1. carrying out physicochemical analysis on the workpiece; 2. cleaning a workpiece; 3. grinding the workpiece; 4. preheating the workpiece; 5. performing gas TD treatment on the workpiece; 6. controlling the reaction time; 7. quenching treatment; 8. tempering; 9. polishing; 10. detecting and adjusting tolerance; solves the problems that the traditional borax salt bath TD coating is adopted to cause serious sticking salt of the workpiece, the workpiece with holes or grooves is difficult to clean, and the crucible is severely corroded. And the TD processing device has high automation degree, reduces labor intensity, and has even seepage layer and little environmental pollution.
Description
Technical Field
The invention relates to the field of TD (time division) treatment processes, in particular to a TD treatment process.
Background
The ultra-hardening treatment technology for TD mould surface adopts the principle of metal carbide diffusion coating TD (Thermal Diffusion Carbide Coating Process), and is characterized by that under a certain treatment temperature, the workpiece is placed in borax molten salt and its special medium, and the metal atoms in the special molten salt and carbon and nitrogen atoms in the workpiece produce chemical reaction, and are diffused on the surface of workpiece so as to form a metal carbide layer of several micrometers to more than twenty micrometers of vanadium, niobium, chromium and titanium, etc.. The traditional method adopts borax salt bath for TD coating treatment, but the borax salt bath has poor fluidity, severe workpiece sticking salt, difficult cleaning of the workpiece with holes or grooves, and severe corrosion to a crucible, high labor intensity of workers, uneven coating and environmental pollution.
Disclosure of Invention
The invention aims to solve the technical problem of providing a TD treatment process, which adopts a gas TD method to solve the problems that the work piece is serious in salt sticking, difficult to clean a work piece with holes or grooves and the crucible is severely corroded caused by adopting a borax salt bath TD coating in the prior art. And the TD processing device has high automation degree, reduces labor intensity, and has even seepage layer and little environmental pollution.
In order to solve the technical problems, the invention adopts the following technical scheme:
a TD processing process comprising the steps of:
step (1): carrying out physicochemical analysis on a workpiece needing TD treatment, and determining the material composition and performance of the workpiece;
Step (2): cleaning the workpiece, and cleaning impurities on the surface of the workpiece;
Step (3): grinding the workpiece to ensure that the surface roughness of the workpiece is less than or equal to Ra0.04 mu m;
Step (4): preheating a workpiece, and conveying the workpiece into a first working cavity of a TD processing device for gas TD processing after preheating;
Step (5): vacuumizing the first working cavity by adopting a vacuum generating device; simultaneously, a heating device is adopted to heat the first working cavity; simultaneously adopting a first fan to blow so as to make the temperature in the first working cavity uniform;
Step (6): after the pressure in the first working cavity reaches a set value, injecting inert gas into the first working cavity by adopting a first gas transmission device;
Step (7): vacuumizing the first working cavity by adopting a vacuum generating device, and injecting vanadium-penetrating carrier gas into the first working cavity by adopting a second gas transmission device after the temperature and the pressure in the first working cavity reach set values;
Step (8): the vanadium-doped carrier gas reacts with the workpiece to form a vanadium carbide layer on the surface of the workpiece; controlling the reaction time of the vanadium-doped carrier gas and the workpiece according to the requirement of the workpiece;
step (9): conveying the workpiece subjected to vanadium infiltration to a quenching device for quenching treatment;
Step (10): conveying the quenched workpiece to a tempering furnace for tempering treatment;
Step (11): polishing the tempered workpiece;
Step (12): and detecting the workpiece and adjusting the tolerance.
Further, the TD processing device comprises a reaction device for performing TD processing on the workpiece, and a quenching device for performing quenching processing on the workpiece after TD processing; the reaction device comprises a first working cavity, the first working cavity is communicated with the vacuum generating device, the first gas transmission device is communicated with the first working cavity, the second gas transmission device is communicated with the first working cavity, and the first working cavity is communicated with an exhaust device for exhausting gas in the first working cavity.
Further, the reaction device also comprises a guide cover arranged in the first working cavity, and the outer surface of the guide cover is attached to the side wall of the first working cavity;
The air guide sleeve comprises an inner wall, an outer wall and a hollow layer arranged between the inner wall and the outer wall; the outer wall is stuck to the side wall of the first working cavity, and the inner wall is surrounded to form a third working cavity; the kuppe has offered a plurality of through-holes, and through-hole intercommunication hollow layer and third working chamber.
Further, the hollow layer is provided with a first fan and a first motor for driving the first fan to rotate.
Further, the heating device comprises a heating layer arranged on the air guide sleeve, and the heating layer is arranged between the outer surface of the air guide sleeve and the side wall of the first working cavity.
Further, the reaction device further comprises a heat preservation layer arranged on the outer surface of the heating layer, and the heat preservation layer is arranged between the heating layer and the side wall of the first working cavity.
Further, the quenching device comprises a second working cavity and a feeding mechanism arranged in the second working cavity; the feeding mechanism divides the second working cavity into an air cooling chamber and an oil cooling chamber; the oil cooling chamber is positioned below the air cooling chamber;
A second fan used for carrying out air cooling quenching treatment on the TD treated workpiece and a second motor used for driving the second fan to rotate are arranged in the air cooling chamber;
a stirring device and a heater are arranged in the oil cooling chamber; the stirring device and the heater are arranged at intervals.
Further, the feeding mechanism comprises a horizontal transmission mechanism and a vertical transmission mechanism;
the horizontal transmission mechanism comprises a feeding forklift and a first driving assembly for driving the feeding forklift to move;
The vertical transmission mechanism comprises a telescopic rod used for driving the horizontal transmission mechanism to move and a second driving assembly used for driving the telescopic rod to stretch out and draw back.
Further, the vanadizing carrier gas of the step (7) comprises VCl 4 and H 2;VCl4 and H 2 with a flow ratio of 1L/H:2.5L/H.
Further, the pressure in the first working chamber of the step (7) is 10pa to 0.126Mpa, and the temperature is 1000 ℃ to 1200 ℃.
The invention has the beneficial effects that: the method comprises the steps of placing a metal workpiece into a TD treatment device by adopting a gas TD method, injecting a gas medium containing vanadium-penetrating agent atoms or niobium-penetrating agent atoms into the TD treatment device, and adjusting the reaction conditions of the TD treatment device to enable the vanadium-penetrating agent atoms or the niobium-penetrating agent atoms to be coated on the surface of the metal workpiece. Solves the problems that the traditional borax salt bath TD coating is adopted to cause serious sticking salt of the workpiece, the workpiece with holes or grooves is difficult to clean, and the crucible is severely corroded. And the TD processing device has high automation degree, reduces labor intensity, and has even seepage layer and little environmental pollution.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Reference numerals illustrate:
Reaction device 1, quenching device 2, vacuum generating device 3, first gas delivery device 4, second gas delivery device 5, exhaust device 6, first working chamber 10, pod 11, heating device 12, heating layer 121, heat insulating layer 13, first fan 14, first motor 15, second working chamber 20, locking door 21, cylinder 22, feeding mechanism 23, air cooling chamber 24, oil cooling chamber 25, inert gas tank 41, first air extractor 42, metal carrier gas tank 51, second air extractor 52, gas collection tank 61, third air extractor 62, inner wall 111, outer wall 112, hollow layer 113, third working chamber 114, through hole 115, horizontal transmission mechanism 231, vertical transmission mechanism 232, feeding forklift 233, first driving component 234, expansion link 235, second driving component 236, second fan 241, second motor 242, stirring device 251, heater 252.
Detailed Description
The invention will be further described with reference to examples and drawings, to which reference is made, but which are not intended to limit the scope of the invention.
The TD treatment is to adopt a metal carbide diffusion coating TD (Thermal Diffusion Carbide Coating Process) principle, namely, placing a workpiece in borax molten salt and a special medium thereof at a certain treatment temperature, and forming a metal carbide layer of vanadium, niobium, chromium, titanium and the like with a thickness of several micrometers to more than twenty micrometers on the surface of the workpiece by chemical reaction between metal atoms in the special molten salt and carbon and nitrogen atoms in the workpiece.
As shown in fig. 1, a TD processing process of the present invention includes the following steps:
Step (1): carrying out physicochemical analysis on a workpiece needing TD treatment, determining the material composition and performance of the workpiece, and preparing for adjusting the required reaction conditions and selecting which quenching mode for the subsequent TD treatment;
step (2): cleaning the workpiece, and cleaning impurities on the surface of the workpiece to prevent the vanadium carbide layer of the workpiece after TD from falling off;
Step (3): grinding the workpiece to ensure that the surface roughness of the workpiece is less than or equal to Ra0.04 mu m, wherein on one hand, an oxide film on the surface of the workpiece is ground to ensure that vanadium-penetrating carrier gas and the workpiece react more fully, and on the other hand, a vanadium carbide layer can be uniformly distributed on the surface of the workpiece to ensure the quality of the surface of the workpiece;
Step (4): preheating the workpiece, conveying the workpiece into a first working cavity 10 of a TD processing device for gas TD processing after preheating, wherein the preheating of the workpiece is used for preventing thermal deformation caused by large temperature difference change when the workpiece enters the TD processing device, and laying a good foundation for forming a high-quality vanadium carbide layer on the surface of the workpiece;
Step (5): the first working chamber 10 is vacuumized by adopting a vacuum generating device 3; simultaneously, the heating device 12 is adopted to heat the interior of the first working chamber 10; simultaneously, the first fan 14 is adopted to blow air to make the temperature in the first working cavity 10 uniform; the TD treatment is carried out in a vacuum environment, and no intervention of oxygen in the air is caused, so that the vanadium carbide layer can not generate black tissues, and the performance of the vanadium carbide layer is improved; the TD treatment is carried out at high temperature, so that the activity of the reaction atoms is enhanced, the diffusion speed of the reaction atoms is accelerated, and a vanadium carbide layer is efficiently formed on the surface of a workpiece; under the action of the first fan 14 and the air guide sleeve 11, turbulence is prevented from being formed in a local area in the first working cavity 10, so that a uniform vanadium carbide layer is formed on the surface of a workpiece;
Step (6): after the pressure in the first working chamber 10 reaches a set value, inert gas is injected into the first working chamber 10 by adopting the first gas transmission device 4; the inert gas is injected to remove oxygen in the first working chamber 10, so that the workpiece is ensured to be subjected to TD treatment in an oxygen-free state, and no intervention of oxygen in air is caused, so that a black tissue is not generated in the vanadium carbide layer, and the performance of the vanadium carbide layer is improved; specifically, the inert gas is nitrogen;
Step (7): the first working chamber 10 is vacuumized by adopting the vacuum generating device 3, and vanadium-penetrating carrier gas is injected into the first working chamber 10 by adopting the second gas transmission device 5 after the temperature and the pressure in the first working chamber 10 reach set values; the vanadium-impregnated carrier gas includes VCl 4 and H 2, and the chemical formula of the reaction of the vanadium-impregnated carrier gas with the workpiece is as follows: (1) VCL 4+2H2＝V+4HCL;(2)VCL4+2Fe＝V+2FeCL2; the two reactions are carried out simultaneously in the first working chamber 10, wherein the first reaction is that VCL 4 reacts with H 2, and the generated V atoms are covered on the surface of a workpiece to form a vanadium carbide layer; the second reaction is a displacement reaction of VCL 4 with Fe of the workpiece, and V atoms form a vanadium carbide layer on the surface of the workpiece. The two chemical reactions are carried out simultaneously, so that the efficiency of forming the vanadium carbide layer on the surface of the workpiece is improved.
Step (8): the vanadium-doped carrier gas reacts with the workpiece to form a vanadium carbide layer on the surface of the workpiece; controlling the reaction time of the vanadium-doped carrier gas and the workpiece according to the requirement of the workpiece; the deposition rate of the vanadium carbide layer on the workpiece is 0.8-2 mu m/min, the thickness of the vanadium carbide layer is plated on the surface of the workpiece according to the requirement, the reaction time of the vanadium-doped carrier gas and the workpiece is controlled, and the deposition rate is in direct proportion to the temperature and the pressure in the first working cavity;
Step (9): conveying the workpiece subjected to vanadium impregnation to a quenching device 2 for quenching treatment; the quenching device 2 is provided with an air cooling chamber 24 and an oil cooling chamber 25, and determines whether the workpiece subjected to vanadium infiltration is subjected to air cooling quenching or oil cooling quenching according to the physicochemical analysis result of the step (1), so that the hardness and the wear resistance of the workpiece are improved;
Step (10): conveying the quenched workpiece to a tempering furnace for tempering treatment, so that the hardness of the workpiece is improved;
Step (11): polishing the tempered workpiece to remove HCL liquid drops and enable the surface of the workpiece to be bright and smooth;
step (12): and detecting the workpiece and adjusting the tolerance, meeting the requirements of clients, and delivering the workpiece to the clients.
The TD treatment process adopts a gas TD method, a metal workpiece is placed into a TD treatment device, a gas medium containing vanadium-penetrating agent atoms or niobium-penetrating agent atoms is injected into the TD treatment device, and then the reaction conditions of the TD treatment device are regulated, so that the vanadium-penetrating agent atoms or the niobium-penetrating agent atoms are coated on the surface of the metal workpiece. Solves the problems of serious workpiece sticking salt, difficult cleaning of workpieces with holes or grooves and serious corrosion of a crucible caused by adopting a borax salt bath TD coating. And the TD processing device has high automation degree, reduces labor intensity, and has even seepage layer and little environmental pollution.
As shown in fig. 1, in this embodiment, the TD processing apparatus includes a reaction apparatus 1 for performing TD processing on a workpiece, and a quenching apparatus 2 for performing quenching processing on the workpiece after TD processing; the reaction device 1 comprises the first working cavity 10, the first working cavity 10 is communicated with the vacuum generating device 3, the first gas conveying device 4 is communicated with the first working cavity 10, the second gas conveying device 5 is communicated with the first working cavity 10, and the first working cavity 10 is communicated with an exhaust device 6 for exhausting gas in the first working cavity 10.
In actual operation, the feeding mechanism 23 feeds the workpiece into the material stage of the first working chamber 10, and then closes the locking door 21, and the first working chamber 10 forms a closed space. The vacuum generating device 3 works, vacuuming treatment is carried out on the first working chamber 10, and when the pressure in the first working chamber 10 reaches a set value, the vacuum generating device 3 stops working. Then, the first gas transmission device 4 works to fill inert gas into the first working chamber 10, and the heating device 12 heats the first working chamber 10. When the pressure and the temperature reach the set values, the second gas transmission device 5 works, carrier gas containing metal atoms is filled into the first working cavity 10, and under the high-temperature and high-pressure environment, the metal atoms and the workpiece react chemically, so that a carbonized metal layer is formed on the surface of the workpiece. After the TD processing is completed, the exhaust device 6 is operated to exhaust the reaction gas in the first working chamber 10 into the gas collection tank 61. After the exhaust is completed, the locking door 21 is opened, and the feeding mechanism 23 takes out the workpiece subjected to the TD treatment and sends the workpiece to the quenching device 2 for quenching treatment. The vacuum generating device 3, the first gas transmission device 4, the second gas transmission device 5 and the exhaust device 6 are all electrically connected with a PLC, and automatic control is realized through the PLC.
Specifically, the first gas delivery device 4 includes an inert gas tank 41 disposed outside the first working chamber 10, and a first air extraction device 42 that communicates the inert gas tank 41 with the first working chamber 10; the second gas delivery device 5 comprises a metal carrier gas tank 51 arranged outside the first working chamber 10, and a second gas extraction device 52 for communicating the metal carrier gas tank 51 with the first working chamber 10; the exhaust device 6 comprises a gas collecting tank 61 arranged outside the first working chamber 10, and a third air pumping device 62 communicated with the gas collecting tank 61 and the first working chamber 10.
In actual operation, when the inert gas needs to be filled into the first working chamber 10, the first air extractor 42 operates to fill the inert gas in the inert gas tank 41 into the first working chamber 10 via the conduit. When it is necessary to charge the first working chamber 10 with the carrier gas containing metal atoms, the second gas extraction device 52 is operated to charge the metal carrier gas containing metal atoms of the metal carrier gas tank 51 into the first working chamber 10 via the duct. When the gas in the first working chamber 10 needs to be exhausted, the third air extractor 62 operates to convey the gas in the first working chamber 10 to the gas collection tank 61. The first gas transmission device 4, the second gas transmission device 5 and the exhaust device 6 have simple structures and low manufacturing cost and maintenance cost.
Specifically, a locking door 21 for closing the feed inlet of the first working chamber 10 and an air cylinder 22 for driving the locking door 21 to open and close are disposed in the second working chamber 20.
In actual operation, when the feeding mechanism 23 feeds or takes materials to the first working cavity 10, the air cylinder 22 drives the locking door 21 to open; when the workpiece is subjected to TD processing, the cylinder 22 will lock the locking door 21. The cylinder 22 is adopted as a driving device, so that the working principle is simple, and the locking force is large.
As shown in fig. 1, in this embodiment, the reaction device 1 further includes a guide cover 11 disposed in the first working chamber 10, and an outer surface of the guide cover 11 is attached to a side wall of the first working chamber 10. The air guide sleeve 11 comprises an inner wall 111, an outer wall 112 and a hollow layer 113 arranged between the inner wall 111 and the outer wall 112; the outer wall 112 is attached to the side wall of the first working chamber 10, and the inner wall 111 encloses a third working chamber 114; the air guide sleeve 11 is provided with a plurality of through holes 115, and the through holes 115 are communicated with the hollow layer 113 and the third working cavity 114. The hollow layer 113 is provided with a first fan 14 and a first motor 15 for driving the first fan 14 to rotate.
When the workpiece is subjected to TD treatment, the guide cover 11 guides the reaction gas so that the reaction gas is uniformly blown to the workpiece, and turbulence is avoided to be formed in a local area in the first working cavity 10, so that a uniform carbonized metal layer is formed on the surface of the workpiece. And the air guide sleeve 11 plays a certain role in heat preservation. Specifically, the workpiece is placed in the third working cavity 114, the first motor 15 drives the first fan 14 to rotate, the wind generated by the first fan 14 is uniformly blown to the workpiece through the hollow layer 113 and the through holes 115, and the reaction gas is also uniformly blown to the workpiece along with the wind direction, so that a uniform carbonized metal layer is formed on the surface of the workpiece, the outer wall 112 has poor heat conduction performance, and a certain heat preservation effect is achieved in the air guide cover 11.
As shown in fig. 1, in this embodiment, the heating device 12 includes a heating layer 121 disposed on the pod 11, and the heating layer 121 is located between the outer surface of the pod 11 and the side wall of the first working chamber 10.
When the workpiece is subjected to the TD processing, the temperature in the pod 11 is raised by the heating layer 121, and the condition for the workpiece to be subjected to the TD processing is satisfied. The heating layer 121 is electrically connected with the PLC, and the temperature in the first working chamber 10 is adjusted by controlling the heating layer 121 through the PLC.
As shown in fig. 1, in this embodiment, the reaction apparatus 1 further includes a heat insulation layer 13 disposed on an outer surface of the heating layer 121, and the heat insulation layer 13 is located between the heating layer 121 and a sidewall of the first working chamber 10.
The heat preservation layer 13 is arranged on the outer surface of the heating layer 121, so that a good heat preservation effect is achieved on the first working cavity 10, the number of times of the secondary working of the heating layer 121 is reduced, resources are saved, and cost is reduced.
As shown in fig. 1, in this embodiment, the quenching apparatus 2 includes a second working chamber 20, and a feeding mechanism 23 disposed in the second working chamber 20; the feeding mechanism 23 divides the second working cavity 20 into an air cooling chamber 24 and an oil cooling chamber 25; the oil cooling chamber 25 is positioned below the air cooling chamber 24; a second fan 241 for performing air cooling quenching treatment on the workpiece subjected to the TD treatment and a second motor 242 for driving the second fan 241 to rotate are arranged in the air cooling chamber 24; the oil cooling chamber 25 is provided with a stirring device 251 and a heater 252; the stirring device 251 and the heater 252 are disposed at a distance from each other.
The feeding mechanism 23 comprises a horizontal transmission mechanism 231 and a vertical transmission mechanism 232; the horizontal conveying mechanism 231 comprises a feeding forklift 233 and a first driving assembly 234 for driving the feeding forklift 233 to move; the vertical transmission mechanism 232 includes a telescopic rod 235 for driving the horizontal transmission mechanism 231 to move, and a second driving assembly 236 for driving the telescopic rod 235 to retract.
After the workpiece TD is processed, the workpiece is taken out by the feeding mechanism 23 and sent to the second working chamber 20, and whether the air cooling quenching is performed in the air cooling chamber 24 or the oil cooling quenching is performed in the oil cooling chamber 25 is selected according to the material of the workpiece. Specifically, when the workpiece needs air cooling quenching, the first driving assembly 234 works to drive the feeding forklift 233 to move forward, after reaching the lower end of the workpiece, the first driving assembly 234 stops working, then the second driving assembly 236 works to drive the telescopic rod 235 to ascend a certain distance, and at the moment, the feeding forklift 233 lifts the workpiece. Then the first driving component 234 works again to drive the feeding forklift 233 to move backwards to bring the workpiece to the air cooling chamber 24, at this time, the second motor 242 works to rotate the second fan 241, and air cooling quenching is carried out on the workpiece by air generated by the second fan 241.
When the workpiece is required to be quenched by oil, the first driving assembly 234 works to drive the feeding forklift 233 to move forwards, after reaching the lower end of the workpiece, the first driving assembly 234 stops working, then the second driving assembly 236 works to drive the telescopic rod 235 to ascend a certain distance, and at the moment, the feeding forklift 233 lifts the workpiece. Then the first driving component 234 works again to drive the feeding forklift 233 to move backwards to bring the workpiece into the air cooling chamber 24, then the fourth motor works to drive the telescopic rod 235 to descend, and meanwhile the telescopic rod 235 drives the horizontal conveying mechanism 231 connected with the telescopic rod to descend integrally until the workpiece is completely immersed in oil for oil cooling quenching. Before the workpiece is subjected to oil-cooled quenching, the heater 252 heats the oil in the oil-cooled chamber 25 to a temperature of sixty to eighty degrees celsius, and the quenching effect of the oil temperature on the workpiece is better. Meanwhile, the stirring device 251 is arranged in the oil cooling chamber 25, so that the temperature of oil in the oil cooling chamber 25 is uniform, and the quenching effect of the workpiece is better.
As shown in fig. 1, in this embodiment, the vanadium-infiltrated carrier gas in the step (7) includes VCl 4 and H 2;VCl4 and H 2 with a flow ratio of 1L/H:2.5L/H. When the vanadium-doped carrier gas reacts with the workpiece, the flow ratio of VCl 4 to H 2 is 1L/H:2.5L/H, the vanadium-doped carrier gas reacts with the workpiece efficiently under the flow ratio, so that the gas which does not react with the workpiece in the first working chamber 10 is reduced, the waste is reduced, and the cost is reduced.
In this embodiment, as shown in fig. 1, the pressure in the first working chamber 10 in the step (7) is 10pa to 0.126Mpa, and the temperature is 1000 ℃ to 1200 ℃.
The vanadium-doped carrier gas has good reaction effect under the pressure of 10pa to 0.126Mpa, the deposition rate of vanadium atoms on the surface of a workpiece is fast, and the metal diffusion time period is reasonable. If the pressure in the first working chamber 10 is lower than 10pa, the enrichment degree of vanadium atoms on the surface of the workpiece is reduced, the metal heat diffusion period is prolonged, and the cost is increased; if the pressure in the first working chamber 10 is higher than 0.126Mpa, the cost of manufacturing the TD processing device increases.
The vanadium-doped carrier gas has good reaction effect at the temperature of 1000-1200 ℃, the thickness of the vanadium carbide layer is increased, the reaction time of the vanadium-doped carrier gas and the workpiece can be shortened, and the deposition rate of vanadium atoms on the surface of the workpiece is high. If the temperature in the first working chamber 10 is lower than 1000 ℃, the reaction period of the vanadium-doped carrier gas and the workpiece is long, the deposition rate of vanadium atoms on the surface of the workpiece is low, and the workpiece is not favorable for TD treatment in a large batch; if the temperature in the first working chamber 10 is higher than 1200 deg.c, the cost of manufacturing the TD processing device is increased, and the device in the first working chamber 10 may be unstable or damaged due to the excessive temperature.
All technical features in the embodiment can be freely combined according to actual needs.
The foregoing embodiments are preferred embodiments of the present invention, and in addition, the present invention may be implemented in other ways, and any obvious substitution is within the scope of the present invention without departing from the concept of the present invention.
Claims (9)
1. A TD processing technique, characterized in that: the method comprises the following steps:
step (1): carrying out physicochemical analysis on a workpiece needing TD treatment, and determining the material composition and performance of the workpiece;
Step (2): cleaning the workpiece, and cleaning impurities on the surface of the workpiece;
Step (3): grinding the workpiece to ensure that the surface roughness of the workpiece is less than or equal to Ra0.04 mu m;
Step (4): preheating a workpiece, and conveying the workpiece into a first working cavity of a TD processing device for gas TD processing after preheating;
Step (5): vacuumizing the first working cavity by adopting a vacuum generating device; simultaneously, a heating device is adopted to heat the first working cavity; simultaneously adopting a first fan to blow so as to make the temperature in the first working cavity uniform;
Step (6): after the pressure in the first working cavity reaches a set value, injecting inert gas into the first working cavity by adopting a first gas transmission device;
Step (7): vacuumizing the first working cavity by adopting a vacuum generating device, and injecting vanadium-penetrating carrier gas into the first working cavity by adopting a second gas transmission device after the temperature and the pressure in the first working cavity reach set values;
Step (8): the vanadium-doped carrier gas reacts with the workpiece to form a vanadium carbide layer on the surface of the workpiece; controlling the reaction time of the vanadium-doped carrier gas and the workpiece according to the requirement of the workpiece;
step (9): conveying the workpiece subjected to vanadium infiltration to a quenching device for quenching treatment;
Step (10): conveying the quenched workpiece to a tempering furnace for tempering treatment;
Step (11): polishing the tempered workpiece;
Step (12): detecting and adjusting tolerance of the workpiece;
The vanadium-impregnated carrier gas in step (7) comprises VCl 4 and H 2;VCl4 and H 2 in a flow ratio of 1L/H:2.5L/H;
The chemical formula of the reaction of the vanadium-doped carrier gas and the workpiece is as follows: (1) VCl 4+2H2＝V+4HCl;(2)VCl4+2Fe＝V+2FeCl2.
2. A TD processing process as claimed in claim 1 wherein: the TD processing device comprises a reaction device for performing TD processing on the workpiece and a quenching device for performing quenching processing on the workpiece after TD processing; the reaction device comprises a first working cavity, the first working cavity is communicated with the vacuum generating device, the first gas transmission device is communicated with the first working cavity, the second gas transmission device is communicated with the first working cavity, and the first working cavity is communicated with an exhaust device for exhausting gas in the first working cavity.
3. A TD processing process as claimed in claim 2 wherein: the reaction device also comprises a guide cover arranged in the first working cavity, and the outer surface of the guide cover is attached to the side wall of the first working cavity;
The air guide sleeve comprises an inner wall, an outer wall and a hollow layer arranged between the inner wall and the outer wall; the outer wall is stuck to the side wall of the first working cavity, and the inner wall is surrounded to form a third working cavity; the kuppe has offered a plurality of through-holes, and through-hole intercommunication hollow layer and third working chamber.
4. A TD processing process as claimed in claim 3 wherein: the hollow layer is provided with a first fan and a first motor for driving the first fan to rotate.
5. A TD processing process as claimed in claim 3 wherein: the heating device comprises a heating layer arranged on the air guide sleeve, and the heating layer is arranged between the outer surface of the air guide sleeve and the side wall of the first working cavity.
6. A TD processing process as claimed in claim 5 wherein: the reaction device further comprises a heat preservation layer arranged on the outer surface of the heating layer, and the heat preservation layer is arranged between the heating layer and the side wall of the first working cavity.
7. A TD processing process as claimed in claim 2 wherein: the quenching device comprises a second working cavity and a feeding mechanism arranged in the second working cavity; the feeding mechanism divides the second working cavity into an air cooling chamber and an oil cooling chamber; the oil cooling chamber is positioned below the air cooling chamber;
A second fan used for carrying out air cooling quenching treatment on the TD treated workpiece and a second motor used for driving the second fan to rotate are arranged in the air cooling chamber;
a stirring device and a heater are arranged in the oil cooling chamber; the stirring device and the heater are arranged at intervals.
8. A TD processing process as claimed in claim 7 wherein: the feeding mechanism comprises a horizontal transmission mechanism and a vertical transmission mechanism;
the horizontal transmission mechanism comprises a feeding forklift and a first driving assembly for driving the feeding forklift to move;
The vertical transmission mechanism comprises a telescopic rod used for driving the horizontal transmission mechanism to move and a second driving assembly used for driving the telescopic rod to stretch out and draw back.
9. A TD processing process as claimed in claim 1 wherein: the pressure in the first working chamber of the step (7) is 10pa to 0.126Mpa, and the temperature is 1000 ℃ to 1200 ℃.
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| CN109852923B (en) * | 2019-04-11 | 2023-09-19 | 华能国际电力股份有限公司 | Device and method for preparing antioxidant coating on inner wall of boiler header and tube seat |
| CN112176278A (en) * | 2019-07-05 | 2021-01-05 | 天津欧亚西斯金属制品有限公司 | Surface treatment technology for TD-H superhard die |
| CN111304584A (en) * | 2019-12-31 | 2020-06-19 | 江苏华东三和兴模具材料有限公司 | TD surface treatment process for steel |
| CN111232980A (en) * | 2020-03-23 | 2020-06-05 | 攀钢集团攀枝花钢铁研究院有限公司 | Preparation method of vanadium carbide powder |
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