GB1076614A - Integrated electrical circuits - Google Patents

Integrated electrical circuits

Info

Publication number
GB1076614A
GB1076614A GB46950/64A GB4695064A GB1076614A GB 1076614 A GB1076614 A GB 1076614A GB 46950/64 A GB46950/64 A GB 46950/64A GB 4695064 A GB4695064 A GB 4695064A GB 1076614 A GB1076614 A GB 1076614A
Authority
GB
United Kingdom
Prior art keywords
input terminals
phase
effect transistor
signal voltage
input signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46950/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1076614A publication Critical patent/GB1076614A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/48—One-port networks simulating reactances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers

Landscapes

  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB46950/64A 1963-12-17 1964-11-18 Integrated electrical circuits Expired GB1076614A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US331271A US3272989A (en) 1963-12-17 1963-12-17 Integrated electrical circuit

Publications (1)

Publication Number Publication Date
GB1076614A true GB1076614A (en) 1967-07-19

Family

ID=23293279

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46950/64A Expired GB1076614A (en) 1963-12-17 1964-11-18 Integrated electrical circuits

Country Status (4)

Country Link
US (1) US3272989A (https=)
DE (1) DE1274738B (https=)
GB (1) GB1076614A (https=)
SE (1) SE318946B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3386016A (en) * 1965-08-02 1968-05-28 Sprague Electric Co Field effect transistor with an induced p-type channel by means of high work function metal or oxide
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
US5093699A (en) * 1990-03-12 1992-03-03 Texas A & M University System Gate adjusted resonant tunnel diode device and method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
US3160835A (en) * 1960-11-21 1964-12-08 Westinghouse Electric Corp Monolithic semiconductor circuit with energy storage junction and feedback to active transistor to produce two terminal inductance
US3165708A (en) * 1961-04-28 1965-01-12 Westinghouse Electric Corp Monolithic semiconductor oscillator
US3170126A (en) * 1961-07-24 1965-02-16 Westinghouse Electric Corp Semiconductor amplitude modulator apparatus

Also Published As

Publication number Publication date
DE1274738B (de) 1968-08-08
US3272989A (en) 1966-09-13
SE318946B (https=) 1969-12-22

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