GB1074672A - Improvements in or relating to semiconductor junction devices - Google Patents

Improvements in or relating to semiconductor junction devices

Info

Publication number
GB1074672A
GB1074672A GB1580663A GB1580663A GB1074672A GB 1074672 A GB1074672 A GB 1074672A GB 1580663 A GB1580663 A GB 1580663A GB 1580663 A GB1580663 A GB 1580663A GB 1074672 A GB1074672 A GB 1074672A
Authority
GB
United Kingdom
Prior art keywords
layer
region
chromium
covered
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1580663A
Inventor
Derek Herbert Garratt
Maurice William White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey UK Ltd
Original Assignee
Plessey UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey UK Ltd filed Critical Plessey UK Ltd
Priority to GB1580663A priority Critical patent/GB1074672A/en
Priority to NL6404039A priority patent/NL148446B/en
Priority to DE19641489206 priority patent/DE1489206A1/en
Priority to FR971648A priority patent/FR1392184A/en
Publication of GB1074672A publication Critical patent/GB1074672A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,074,672. Semi-conductor devices. PLESSEY-U.K. Ltd. April 2, 1964 [April 22, 1963], No. 15806/63. Heading H1K. A PN junction 13a is formed between regions of opposite conductivity types in a semiconductor body 10 and reaches the surface of the body in an area covered by a masking layer 11, and an electrical connection to one region 13 is provided by an electrolytically deposited metallic layer 16 extending over that part of the surface of the region 13 which is not covered by the masking layer 11 and also over the layer 11 at least as far as the junction 13a. As described, a slice 10 of N-type silicon is provided with an oxidized layer 11 which acts as a mask for the diffusion of boron through an aperture 12 to form a P-type region 13. A ring of chromium is evaporated on to the oxide layer 11 surrounding the aperture 12, and lead, cadmium or tin is electroplated on to the exposed surface of the region 13 and allowed to extend over the chromium-covered part of the oxide layer 11. The electro-deposited metal is then melted so that surface tension forces pull the molten metal into a globule (the chromium not being wetted by the molten metal) which, upon cooling, solidifies into a raised contact portion 16. Alternatively, the electrodeposited metal may be fused to a copper ball which will then form the raised contact portion.
GB1580663A 1963-04-22 1963-04-22 Improvements in or relating to semiconductor junction devices Expired GB1074672A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1580663A GB1074672A (en) 1963-04-22 1963-04-22 Improvements in or relating to semiconductor junction devices
NL6404039A NL148446B (en) 1963-04-22 1964-04-14 PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE INCLUDING THE APPLICATION OF A CONTACT LAYER ON A SEMICONDUCTOR PLATE WITH AT LEAST ONE P, N TRANSITION AND FITTED WITH A SURFACE LAYER OF ELECTRICAL INSULATING MATERIALS INSULATING MATERIALS.
DE19641489206 DE1489206A1 (en) 1963-04-22 1964-04-17 Surface semiconductor component
FR971648A FR1392184A (en) 1963-04-22 1964-04-21 Junction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1580663A GB1074672A (en) 1963-04-22 1963-04-22 Improvements in or relating to semiconductor junction devices

Publications (1)

Publication Number Publication Date
GB1074672A true GB1074672A (en) 1967-07-05

Family

ID=10065816

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1580663A Expired GB1074672A (en) 1963-04-22 1963-04-22 Improvements in or relating to semiconductor junction devices

Country Status (3)

Country Link
DE (1) DE1489206A1 (en)
GB (1) GB1074672A (en)
NL (1) NL148446B (en)

Also Published As

Publication number Publication date
NL6404039A (en) 1964-10-23
DE1489206A1 (en) 1969-06-04
NL148446B (en) 1976-01-15

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