GB1074032A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1074032A GB1074032A GB4935463A GB4935463A GB1074032A GB 1074032 A GB1074032 A GB 1074032A GB 4935463 A GB4935463 A GB 4935463A GB 4935463 A GB4935463 A GB 4935463A GB 1074032 A GB1074032 A GB 1074032A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- collector
- base
- etched
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,074,032. Semi-conductor devices. MULLARD Ltd. Dec. 13, 1963, No. 49354/63. Heading H1K. In a transistor comprising emitter, base, and collector regions, the lateral area of the emitter is small compared with that of the base, the collector has a lightly doped part and a heavily doped part, and a portion only of the collector immediately adjacent to the base is heavily doped and lies at least partly beneath the emitter. As shown, a wafer 2 of N-type silicon lightly doped with phosphorus has an oxide layer formed on its surface by heating in wet oxygen. This oxide layer is masked using a photolithographic technique and is etched to remove the oxide layer apart from those areas shown enclosed by chain-cross lines. Phosphorus is then diffused into the surface of the wafer to form heavily doped N-type surface regions, 1, 12 and 13. The surface of the wafer is reoxidized and etched and boron is diffused-in to form P-type base region 4. The oxidizing and etching is repeated and phosphorus is diffused in to form N-type emitter region 3. The surface is again oxidized and etched and an aluminium layer is evaporated on to the surface and masked and etched so that it is removed apart from the areas 9, 10, 11, 14 and 15 which are then alloyed to the surface. Gold wires are connected to contacts 9, 10, 11, 14 and 15 by thermocompression bonding. The lower face of the wafer is ground to the required size and may be secured to a gold-plated nickel-iron header. After each of the diffusion and alloying steps the wafer is boiled in concentrated nitric acid and washed in deionized water. The transistor exhibits less series resistance but slightly larger capacitance than a device with the whole collector of lightly doped material and less capacitance but slightly greater series resistance than a device with the whole collector of heavily doped material. A plurality of individual transistors or solid state circuits may be formed in a single wafer of semi-conductor material which is subsequently cut up. In an alternative embodiment, Figs. 4, 5 and 6 (not shown), the regions of the transistor are produced in a substantially concentric configuration. The device of either embodiment may be used in conventional transistor circuits by joining the two base contacts 10, 11 together.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4935463A GB1074032A (en) | 1963-12-13 | 1963-12-13 | Improvements in and relating to semiconductor devices |
| NL646414187A NL143074B (en) | 1963-12-13 | 1964-12-05 | TRANSISTOR. |
| DE1489191A DE1489191C3 (en) | 1963-12-13 | 1964-12-10 | transistor |
| FR998550A FR1418517A (en) | 1963-12-13 | 1964-12-14 | Transistor |
| BE657111A BE657111A (en) | 1963-12-13 | 1964-12-14 | |
| US418446A US3377527A (en) | 1963-12-13 | 1964-12-15 | Low capacity and resistance transistor structure employing a two-conductivity collector region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4935463A GB1074032A (en) | 1963-12-13 | 1963-12-13 | Improvements in and relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1074032A true GB1074032A (en) | 1967-06-28 |
Family
ID=10452084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4935463A Expired GB1074032A (en) | 1963-12-13 | 1963-12-13 | Improvements in and relating to semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1074032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2356286A (en) * | 1999-07-07 | 2001-05-16 | James Rodger Leitch | Transistor with highly doped collector region to reduce noise when used as an amplifier |
-
1963
- 1963-12-13 GB GB4935463A patent/GB1074032A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2356286A (en) * | 1999-07-07 | 2001-05-16 | James Rodger Leitch | Transistor with highly doped collector region to reduce noise when used as an amplifier |
| GB2356286B (en) * | 1999-07-07 | 2002-10-23 | James Rodger Leitch | Low noise semiconductor amplifier |
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