GB1068248A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1068248A
GB1068248A GB38785/64A GB3878564A GB1068248A GB 1068248 A GB1068248 A GB 1068248A GB 38785/64 A GB38785/64 A GB 38785/64A GB 3878564 A GB3878564 A GB 3878564A GB 1068248 A GB1068248 A GB 1068248A
Authority
GB
United Kingdom
Prior art keywords
wafer
region
type
heated
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38785/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1068248A publication Critical patent/GB1068248A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/00—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
GB38785/64A 1963-10-28 1964-09-23 Semiconductor devices Expired GB1068248A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31943363A 1963-10-28 1963-10-28
US572151A US3327183A (en) 1963-10-28 1966-08-12 Controlled rectifier having asymmetric conductivity gradients

Publications (1)

Publication Number Publication Date
GB1068248A true GB1068248A (en) 1967-05-10

Family

ID=26982000

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38785/64A Expired GB1068248A (en) 1963-10-28 1964-09-23 Semiconductor devices

Country Status (7)

Country Link
US (1) US3327183A (cg-RX-API-DMAC10.html)
BE (1) BE654988A (cg-RX-API-DMAC10.html)
BR (1) BR6462522D0 (cg-RX-API-DMAC10.html)
DE (1) DE1489251B1 (cg-RX-API-DMAC10.html)
GB (1) GB1068248A (cg-RX-API-DMAC10.html)
NL (1) NL6412489A (cg-RX-API-DMAC10.html)
SE (1) SE305263B (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
CH495631A (de) * 1964-11-28 1970-08-31 Licentia Gmbh Steuerbarer Halbleitergleichrichter
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3403309A (en) * 1965-10-23 1968-09-24 Westinghouse Electric Corp High-speed semiconductor switch
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL125412C (cg-RX-API-DMAC10.html) * 1959-04-15
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
FR1295241A (fr) * 1960-07-19 1962-06-01 Comp Generale Electricite Dispositif redresseur semi-conducteur avec auto-protection contre les surtensions
FR1316226A (fr) * 1961-03-10 1963-01-25 Comp Generale Electricite Dispositif semi-conducteur à autoprotection contre une surtension
NL99556C (cg-RX-API-DMAC10.html) * 1961-03-30
NL275313A (cg-RX-API-DMAC10.html) * 1961-05-10
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3242551A (en) * 1963-06-04 1966-03-29 Gen Electric Semiconductor switch

Also Published As

Publication number Publication date
NL6412489A (cg-RX-API-DMAC10.html) 1965-04-29
BR6462522D0 (pt) 1973-05-15
SE305263B (cg-RX-API-DMAC10.html) 1968-10-21
BE654988A (cg-RX-API-DMAC10.html) 1965-02-15
DE1489251B1 (de) 1970-02-12
US3327183A (en) 1967-06-20

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