GB1066847A - Solid electrolytic capacitor and method of making same - Google Patents
Solid electrolytic capacitor and method of making sameInfo
- Publication number
- GB1066847A GB1066847A GB3885963A GB3885963A GB1066847A GB 1066847 A GB1066847 A GB 1066847A GB 3885963 A GB3885963 A GB 3885963A GB 3885963 A GB3885963 A GB 3885963A GB 1066847 A GB1066847 A GB 1066847A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- silicon
- particles
- layer
- liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 239000007787 solid Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052710 silicon Inorganic materials 0.000 abstract 7
- 239000010703 silicon Substances 0.000 abstract 7
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 6
- 239000002245 particle Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000007598 dipping method Methods 0.000 abstract 2
- 239000004816 latex Substances 0.000 abstract 2
- 229920000126 latex Polymers 0.000 abstract 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 abstract 2
- 239000011856 silicon-based particle Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001476 alcoholic effect Effects 0.000 abstract 1
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000002706 hydrostatic effect Effects 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 235000010333 potassium nitrate Nutrition 0.000 abstract 1
- 239000004323 potassium nitrate Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007784 solid electrolyte Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
- B22F3/04—Compacting only by applying fluid pressure, e.g. by cold isostatic pressing [CIP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B11/00—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses
- B30B11/001—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses using a flexible element, e.g. diaphragm, urged by fluid pressure; Isostatic presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B11/00—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses
- B30B11/004—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses involving the use of very high pressures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Ceramic Products (AREA)
Abstract
1,066,847. Capacitors. TEXAS INSTRUMENTS Inc. Oct. 2, 1963 [Oct. 11, 1962], No. 38859/63. Heading H1M. A solid electrolytic capacitor comprises an electrode of compacted silicon particles which has been anodized to form a silicon oxide dielectric layer, over which a solid counter electrode layer, such as manganese dioxide, has been deposited. In order to make electrical connection with the silicon electrode a silicon rod is inserted into the compacted assembly of silicon particles before anodization and the whole mass sintered. To make connection with the counter electrode, layers of carbon and of silver are successively deposited upon it. A suitable starting material from which to construct the capacitor is P-type silicon, doped with boron so as to reduce its resistivity to less than 4 ohm. centimeters, of polycrystalline form. This is broken into small irregular particles by severe shaking, after which a mass of the broken particles having cross-sections within a preferred range (75-150 microns) is placed in a latex liner together with a silicon rod, the ends of the liner being stopped. The liner is then placed within a perforated tube, which is sealed within a latex tube and the whole subjected to 10,000-60,000 1b. pressure in a hydrostatic pressing cylinder, to compact the silicon rod and particles. Thereafter the electrode is sintered at 1300‹ C. under pressure in a hydrogen atmosphere. To provide the dielectric film, the silicon electrode is anodized in a solution of potassium nitrate containing N-methyl-acetamide. The silicon electrode is made the positive electrode in this process, while a suitable negative electrode would be platinum. After this step, a layer of manganese dioxide is deposited on the electrode by dipping the electrode in an alcoholic solution of manganese nitrate and then pyrolizing the layer of manganese nitrate so produced. This process is repeated several times, and then a carbon layer is provided by dipping the unit in a solution of chlorocarbon. Thereafter the outside of the unit is painted with silver and potted with a suitable resin within a metal can. Other materials beside manganese dioxide, e.g. lead oxide, cadmium sulphide or pure nickel may be used as the solid electrolyte.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22983362A | 1962-10-11 | 1962-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1066847A true GB1066847A (en) | 1967-04-26 |
Family
ID=22862855
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3036466A Expired GB1066849A (en) | 1962-10-11 | 1963-10-02 | Method of compacting silicon particles |
| GB3036366A Expired GB1066848A (en) | 1962-10-11 | 1963-10-02 | Method of preparing silicon particles |
| GB3885963A Expired GB1066847A (en) | 1962-10-11 | 1963-10-02 | Solid electrolytic capacitor and method of making same |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3036466A Expired GB1066849A (en) | 1962-10-11 | 1963-10-02 | Method of compacting silicon particles |
| GB3036366A Expired GB1066848A (en) | 1962-10-11 | 1963-10-02 | Method of preparing silicon particles |
Country Status (3)
| Country | Link |
|---|---|
| GB (3) | GB1066849A (en) |
| MY (2) | MY6900228A (en) |
| NL (1) | NL299044A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114974898A (en) * | 2022-06-14 | 2022-08-30 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor core and manufacturing method thereof, electrolytic capacitor and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0791048B2 (en) * | 1988-02-18 | 1995-10-04 | アドバンスド、シリコン、マテリアルズ、インコーポレイテッド | Method for forming pre-sized particles from silicon rods |
| DE4218283A1 (en) * | 1992-05-27 | 1993-12-02 | Wacker Chemitronic | Process for the contamination-free comminution of semiconductor material, in particular silicon |
-
0
- NL NL299044D patent/NL299044A/xx unknown
-
1963
- 1963-10-02 GB GB3036466A patent/GB1066849A/en not_active Expired
- 1963-10-02 GB GB3036366A patent/GB1066848A/en not_active Expired
- 1963-10-02 GB GB3885963A patent/GB1066847A/en not_active Expired
-
1969
- 1969-12-30 MY MY6900228A patent/MY6900228A/en unknown
- 1969-12-31 MY MY6900269A patent/MY6900269A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114974898A (en) * | 2022-06-14 | 2022-08-30 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor core and manufacturing method thereof, electrolytic capacitor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| MY6900228A (en) | 1969-12-31 |
| NL299044A (en) | |
| GB1066848A (en) | 1967-04-26 |
| MY6900269A (en) | 1969-12-31 |
| GB1066849A (en) | 1967-04-26 |
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