GB1052447A - - Google Patents
Info
- Publication number
- GB1052447A GB1052447A GB1052447DA GB1052447A GB 1052447 A GB1052447 A GB 1052447A GB 1052447D A GB1052447D A GB 1052447DA GB 1052447 A GB1052447 A GB 1052447A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- current
- zone
- doped
- recombination centres
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011888 foil Substances 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0081478 DE1214790C2 (de) | 1962-09-15 | 1962-09-15 | Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps |
| FR18571A FR88265E (fr) | 1962-09-15 | 1965-05-26 | Redresseur pnpn pour courants forts et son procédé de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1052447A true GB1052447A (xx) |
Family
ID=25996996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1052447D Active GB1052447A (xx) | 1962-09-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3349299A (xx) |
| CH (1) | CH416839A (xx) |
| DE (1) | DE1214790C2 (xx) |
| FR (1) | FR88265E (xx) |
| GB (1) | GB1052447A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081821A (en) * | 1974-12-23 | 1978-03-28 | Bbc Brown Boveri & Company Limited | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356543A (en) * | 1964-12-07 | 1967-12-05 | Rca Corp | Method of decreasing the minority carrier lifetime by diffusion |
| US3390022A (en) * | 1965-06-30 | 1968-06-25 | North American Rockwell | Semiconductor device and process for producing same |
| GB1155978A (en) * | 1965-10-28 | 1969-06-25 | Matsushita Electric Ind Co Ltd | Pressure-Responsive Semiconductor Device. |
| DE1614410B2 (de) * | 1967-01-25 | 1973-12-13 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Halbleiterbauelement |
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| GB1410726A (en) * | 1972-01-24 | 1975-10-22 | Licentia Gmbh | Thyristor with increased switching on an switching through speed |
| DE2333429C3 (de) * | 1973-06-30 | 1984-01-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor und Verfahren zu seiner Herstellung |
| JPS5230389A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Thyristor |
| US4112458A (en) * | 1976-01-26 | 1978-09-05 | Cutler-Hammer, Inc. | Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C |
| JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
| GB2359415A (en) * | 2000-02-21 | 2001-08-22 | Westcode Semiconductors Ltd | Profiling of semiconductor wafer to prevent edge breakdown |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3036226A (en) * | 1958-12-15 | 1962-05-22 | Ibm | Negative resistance semiconductor circuit utilizing four-layer transistor |
| NL239104A (xx) * | 1958-05-26 | 1900-01-01 | Western Electric Co | |
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
| US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
| NL265766A (xx) * | 1960-06-10 | |||
| US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
| US3210560A (en) * | 1961-04-17 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device |
| NL275313A (xx) * | 1961-05-10 |
-
0
- GB GB1052447D patent/GB1052447A/en active Active
-
1962
- 1962-09-15 DE DE1962S0081478 patent/DE1214790C2/de not_active Expired
-
1963
- 1963-06-25 CH CH788363A patent/CH416839A/de unknown
- 1963-09-13 US US308830A patent/US3349299A/en not_active Expired - Lifetime
-
1965
- 1965-05-26 FR FR18571A patent/FR88265E/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081821A (en) * | 1974-12-23 | 1978-03-28 | Bbc Brown Boveri & Company Limited | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1214790B (de) | 1966-04-21 |
| US3349299A (en) | 1967-10-24 |
| CH416839A (de) | 1966-07-15 |
| DE1214790C2 (de) | 1973-08-30 |
| FR88265E (fr) | 1967-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3006791A (en) | Semiconductor devices | |
| US4259683A (en) | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer | |
| US2964689A (en) | Switching transistors | |
| US3249831A (en) | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient | |
| GB1052447A (xx) | ||
| JPS5539619A (en) | Thyristor | |
| US3982269A (en) | Semiconductor devices and method, including TGZM, of making same | |
| US3538401A (en) | Drift field thyristor | |
| US2967344A (en) | Semiconductor devices | |
| JPS5691478A (en) | Manufacture of punch-through type diode | |
| US3012175A (en) | Contact for gallium arsenide | |
| US3272661A (en) | Manufacturing method of a semi-conductor device by controlling the recombination velocity | |
| US3337783A (en) | Shorted emitter controlled rectifier with improved turn-off gain | |
| US3487276A (en) | Thyristor having improved operating characteristics at high temperature | |
| US2790034A (en) | Semiconductor signal translating devices | |
| GB1092727A (en) | The production of a semi-conductor thyratron of the pnpn-type | |
| US3461359A (en) | Semiconductor structural component | |
| US4383268A (en) | High-current, high-voltage semiconductor devices having a metallurgical grade substrate | |
| US3211971A (en) | Pnpn semiconductor translating device and method of construction | |
| US2817798A (en) | Semiconductors | |
| US3278347A (en) | High voltage semiconductor device | |
| GB1174236A (en) | Negative Resistance Semiconductor Device | |
| US3513363A (en) | Thyristor with particular doping | |
| US3662232A (en) | Semiconductor devices having low minority carrier lifetime and process for producing same | |
| US3935587A (en) | High power, high frequency bipolar transistor with alloyed gold electrodes |