FR88265E - Redresseur pnpn pour courants forts et son procédé de fabrication - Google Patents
Redresseur pnpn pour courants forts et son procédé de fabricationInfo
- Publication number
- FR88265E FR88265E FR18571A FR18571A FR88265E FR 88265 E FR88265 E FR 88265E FR 18571 A FR18571 A FR 18571A FR 18571 A FR18571 A FR 18571A FR 88265 E FR88265 E FR 88265E
- Authority
- FR
- France
- Prior art keywords
- pnpn
- rectifier
- manufacturing process
- strong currents
- currents
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1052447D GB1052447A (xx) | 1962-09-15 | ||
DE1962S0081478 DE1214790C2 (de) | 1962-09-15 | 1962-09-15 | Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps |
CH788363A CH416839A (de) | 1962-09-15 | 1963-06-25 | Leistungsgleichrichter mit einkristallinem Halbleiterkörper und vier Schichten abwechselnden Leitfähigkeitstyps |
US308830A US3349299A (en) | 1962-09-15 | 1963-09-13 | Power recitfier of the npnp type having recombination centers therein |
FR947356A FR1418007A (fr) | 1962-09-15 | 1963-09-15 | Redresseur pn-pn pour courants forts et son procédé de fabrication |
FR18571A FR88265E (fr) | 1962-09-15 | 1965-05-26 | Redresseur pnpn pour courants forts et son procédé de fabrication |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962S0081478 DE1214790C2 (de) | 1962-09-15 | 1962-09-15 | Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps |
FR18571A FR88265E (fr) | 1962-09-15 | 1965-05-26 | Redresseur pnpn pour courants forts et son procédé de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
FR88265E true FR88265E (fr) | 1967-01-06 |
Family
ID=25996996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR18571A Expired FR88265E (fr) | 1962-09-15 | 1965-05-26 | Redresseur pnpn pour courants forts et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US3349299A (xx) |
CH (1) | CH416839A (xx) |
DE (1) | DE1214790C2 (xx) |
FR (1) | FR88265E (xx) |
GB (1) | GB1052447A (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356543A (en) * | 1964-12-07 | 1967-12-05 | Rca Corp | Method of decreasing the minority carrier lifetime by diffusion |
US3390022A (en) * | 1965-06-30 | 1968-06-25 | North American Rockwell | Semiconductor device and process for producing same |
GB1155978A (en) * | 1965-10-28 | 1969-06-25 | Matsushita Electric Ind Co Ltd | Pressure-Responsive Semiconductor Device. |
DE1614410B2 (de) * | 1967-01-25 | 1973-12-13 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Halbleiterbauelement |
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
US3906545A (en) * | 1972-01-24 | 1975-09-16 | Licentia Gmbh | Thyristor structure |
DE2333429C3 (de) * | 1973-06-30 | 1984-01-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor und Verfahren zu seiner Herstellung |
CH580339A5 (xx) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie | |
JPS5230389A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Thyristor |
US4112458A (en) * | 1976-01-26 | 1978-09-05 | Cutler-Hammer, Inc. | Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C |
JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
GB2359415A (en) * | 2000-02-21 | 2001-08-22 | Westcode Semiconductors Ltd | Profiling of semiconductor wafer to prevent edge breakdown |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3036226A (en) * | 1958-12-15 | 1962-05-22 | Ibm | Negative resistance semiconductor circuit utilizing four-layer transistor |
NL239104A (xx) * | 1958-05-26 | 1900-01-01 | Western Electric Co | |
US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
NL265766A (xx) * | 1960-06-10 | |||
US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
US3210560A (en) * | 1961-04-17 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device |
NL275313A (xx) * | 1961-05-10 |
-
0
- GB GB1052447D patent/GB1052447A/en active Active
-
1962
- 1962-09-15 DE DE1962S0081478 patent/DE1214790C2/de not_active Expired
-
1963
- 1963-06-25 CH CH788363A patent/CH416839A/de unknown
- 1963-09-13 US US308830A patent/US3349299A/en not_active Expired - Lifetime
-
1965
- 1965-05-26 FR FR18571A patent/FR88265E/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1214790B (de) | 1966-04-21 |
GB1052447A (xx) | |
CH416839A (de) | 1966-07-15 |
US3349299A (en) | 1967-10-24 |
DE1214790C2 (de) | 1973-08-30 |
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