GB1051720A - - Google Patents
Info
- Publication number
- GB1051720A GB1051720A GB1051720DA GB1051720A GB 1051720 A GB1051720 A GB 1051720A GB 1051720D A GB1051720D A GB 1051720DA GB 1051720 A GB1051720 A GB 1051720A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- zone
- junction
- devices
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26355463A | 1963-03-07 | 1963-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1051720A true GB1051720A (enExample) | 1900-01-01 |
Family
ID=23002250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1051720D Expired GB1051720A (enExample) | 1963-03-07 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1293908B (enExample) |
| GB (1) | GB1051720A (enExample) |
| NL (1) | NL6401829A (enExample) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL251527A (enExample) * | 1959-05-12 | |||
| FR1279484A (fr) * | 1959-11-13 | 1961-12-22 | Siemens Ag | Dispositif semi-conducteur à monocristal |
| NL265766A (enExample) * | 1960-06-10 | |||
| NL275313A (enExample) * | 1961-05-10 |
-
0
- GB GB1051720D patent/GB1051720A/en not_active Expired
-
1964
- 1964-01-20 DE DEN24323A patent/DE1293908B/de active Pending
- 1964-02-26 NL NL6401829A patent/NL6401829A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1293908B (de) | 1969-04-30 |
| NL6401829A (enExample) | 1964-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Appels et al. | High voltage thin layer devices (RESURF devices) | |
| US4145703A (en) | High power MOS device and fabrication method therefor | |
| US3302076A (en) | Semiconductor device with passivated junction | |
| US3555374A (en) | Field effect semiconductor device having a protective diode | |
| US3244949A (en) | Voltage regulator | |
| US8384154B2 (en) | Bidirectional power switch controllable to be turned on and off | |
| JPH0347593B2 (enExample) | ||
| KR840008222A (ko) | 연결패드에서 기저의 실리콘으로 직접 연결된 고전력 금속산화물 반도체 전계효과 트랜지스터 | |
| SE8009091L (sv) | Halvledaranordning | |
| CN107527943A (zh) | 功率半导体装置 | |
| WO2019159351A1 (ja) | 炭化珪素半導体装置 | |
| US3488564A (en) | Planar epitaxial resistors | |
| US3961358A (en) | Leakage current prevention in semiconductor integrated circuit devices | |
| US4000507A (en) | Semiconductor device having two annular electrodes | |
| JP2003509867A (ja) | 半導体装置 | |
| CN111725296B (zh) | 半导体装置 | |
| US3363152A (en) | Semiconductor devices with low leakage current across junction | |
| US4212022A (en) | Field effect transistor with gate and drain electrodes on the side surface of a mesa | |
| US6051474A (en) | Negative biasing of isolation trench fill to attract mobile positive ions away from bipolar device regions | |
| TW201735187A (zh) | 半導體裝置 | |
| GB1051720A (enExample) | ||
| US4438449A (en) | Field effect semiconductor device having a protective diode with reduced internal resistance | |
| US3564355A (en) | Semiconductor device employing a p-n junction between induced p- and n- regions | |
| KR100243961B1 (ko) | 반도체장치 | |
| NO156613B (no) | Apparat for raffinering av smeltet metall. |