GB1050805A - - Google Patents

Info

Publication number
GB1050805A
GB1050805A GB1050805DA GB1050805A GB 1050805 A GB1050805 A GB 1050805A GB 1050805D A GB1050805D A GB 1050805DA GB 1050805 A GB1050805 A GB 1050805A
Authority
GB
United Kingdom
Prior art keywords
type
zones
region
side regions
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of GB1050805A publication Critical patent/GB1050805A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/031—Diffusion at an edge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB1050805D 1964-06-23 Expired GB1050805A (US20020051482A1-20020502-M00012.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US377311A US3333166A (en) 1964-06-23 1964-06-23 Semiconductor circuit complex having low isolation capacitance and method of manufacturing same

Publications (1)

Publication Number Publication Date
GB1050805A true GB1050805A (US20020051482A1-20020502-M00012.png) 1900-01-01

Family

ID=23488588

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1050805D Expired GB1050805A (US20020051482A1-20020502-M00012.png) 1964-06-23

Country Status (6)

Country Link
US (2) US3333166A (US20020051482A1-20020502-M00012.png)
BE (1) BE665131A (US20020051482A1-20020502-M00012.png)
DE (1) DE1639549C2 (US20020051482A1-20020502-M00012.png)
FR (1) FR1437276A (US20020051482A1-20020502-M00012.png)
GB (1) GB1050805A (US20020051482A1-20020502-M00012.png)
NL (1) NL144439B (US20020051482A1-20020502-M00012.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
US3483446A (en) * 1967-06-15 1969-12-09 Westinghouse Electric Corp Semiconductor integrated circuit including a bidirectional transistor and method of making the same
GB1280022A (en) * 1968-08-30 1972-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE2004090C3 (de) * 1970-01-30 1980-08-07 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierter Transistor mit herabgesetztem inversem Verstärkungsfaktor
NL7307527A (US20020051482A1-20020502-M00012.png) * 1973-05-30 1974-12-03
US3979230A (en) * 1973-10-30 1976-09-07 General Electric Company Method of making isolation grids in bodies of semiconductor material
US4113512A (en) * 1976-10-28 1978-09-12 International Business Machines Corporation Technique for preventing forward biased epi-isolation degradation
US6169801B1 (en) 1998-03-16 2001-01-02 Midcom, Inc. Digital isolation apparatus and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
GB1047388A (US20020051482A1-20020502-M00012.png) * 1962-10-05
US3229119A (en) * 1963-05-17 1966-01-11 Sylvania Electric Prod Transistor logic circuits

Also Published As

Publication number Publication date
DE1639549B1 (de) 1970-01-29
NL6506311A (US20020051482A1-20020502-M00012.png) 1965-12-24
FR1437276A (fr) 1966-04-29
DE1639549C2 (de) 1974-08-22
BE665131A (US20020051482A1-20020502-M00012.png) 1965-10-01
NL144439B (nl) 1974-12-16
USB377311I5 (US20020051482A1-20020502-M00012.png) 1900-01-01
US3333166A (en) 1967-07-25

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