GB1047378A - - Google Patents
Info
- Publication number
- GB1047378A GB1047378A GB1047378DA GB1047378A GB 1047378 A GB1047378 A GB 1047378A GB 1047378D A GB1047378D A GB 1047378DA GB 1047378 A GB1047378 A GB 1047378A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- region
- type
- adjacent
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003321 amplification Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0026566 | 1964-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1047378A true GB1047378A (enrdf_load_stackoverflow) |
Family
ID=7202665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1047378D Active GB1047378A (enrdf_load_stackoverflow) | 1964-09-18 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1047378A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2356286A (en) * | 1999-07-07 | 2001-05-16 | James Rodger Leitch | Transistor with highly doped collector region to reduce noise when used as an amplifier |
-
0
- GB GB1047378D patent/GB1047378A/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2356286A (en) * | 1999-07-07 | 2001-05-16 | James Rodger Leitch | Transistor with highly doped collector region to reduce noise when used as an amplifier |
| GB2356286B (en) * | 1999-07-07 | 2002-10-23 | James Rodger Leitch | Low noise semiconductor amplifier |
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