GB1047378A - - Google Patents

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Publication number
GB1047378A
GB1047378A GB1047378DA GB1047378A GB 1047378 A GB1047378 A GB 1047378A GB 1047378D A GB1047378D A GB 1047378DA GB 1047378 A GB1047378 A GB 1047378A
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GB
United Kingdom
Prior art keywords
junction
region
type
adjacent
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1047378A publication Critical patent/GB1047378A/en
Active legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,047,378. Transistors. INTERNATIONAL STANDARD ELECTRIC CORPORATION. Sept. 17, 1965 [Sept. 18, 1964], No. 39736/65. Heading H1K. The collector zone of a transistor is commonly heavily doped adjacent the collector electrode and more lightly doped adjacent the collector junction. The higher resistivity adjacent the junction improves the breakdown voltage but detracts from the amplification factor, particularly at high currents. This latter disadvantage is obviated by the invention which provides a further heavily doped region within the lightly doped region and immediately adjacent the junction. Such further region is thin and follows the course of the junction. Fig. 1 (not shown) depicts an NPN planar transistor in which on an N+ substrate an N- layer has been laid, e.g. epitaxially, and part of the surface of this layer has been converted into N+ type by diffusion of further N-type dopant through an oxide mask. Into the diffused N+ region, through the same mask, a P-type base region has been diffused and finally an N-type emitter has been diffused into this through a second and smaller mask. Both masks are left in position to protect the surface junctions. By suitable etching of a similarly produced structure, an alternative mesa-type embodiment may be obtained.
GB1047378D 1964-09-18 Active GB1047378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ0026566 1964-09-18

Publications (1)

Publication Number Publication Date
GB1047378A true GB1047378A (en)

Family

ID=7202665

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1047378D Active GB1047378A (en) 1964-09-18

Country Status (1)

Country Link
GB (1) GB1047378A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2356286A (en) * 1999-07-07 2001-05-16 James Rodger Leitch Transistor with highly doped collector region to reduce noise when used as an amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2356286A (en) * 1999-07-07 2001-05-16 James Rodger Leitch Transistor with highly doped collector region to reduce noise when used as an amplifier
GB2356286B (en) * 1999-07-07 2002-10-23 James Rodger Leitch Low noise semiconductor amplifier

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