GB1031325A - Method of anodically oxidising the surfaces of semiconductor bodies - Google Patents

Method of anodically oxidising the surfaces of semiconductor bodies

Info

Publication number
GB1031325A
GB1031325A GB5555/65A GB555565A GB1031325A GB 1031325 A GB1031325 A GB 1031325A GB 5555/65 A GB5555/65 A GB 5555/65A GB 555565 A GB555565 A GB 555565A GB 1031325 A GB1031325 A GB 1031325A
Authority
GB
United Kingdom
Prior art keywords
conductor
semi
connection
region
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5555/65A
Inventor
Wolfgang Mosebach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5555/65A priority Critical patent/GB1031325A/en
Publication of GB1031325A publication Critical patent/GB1031325A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)

Abstract

In anodically oxidizing the surface of a semi-conductor, the anode connection to the semi-conductor is made by pressure contact of a metal conductor provided at least over its immersed length with an insulting oxidized layer. Typically the metal conductor is formed by one or more of Al, Ti, Nb and Ta, and the semi-conductor body is silicon treated in an electrolyte comprising a saturated solution of KNO3 in N-methyl-acetamide. The semi-conductor body may contain a p-n junction and the anodic connection may be made to either region, connection to a p-type region effecting oxidation only in that region. As shown, a stack of silicon slices 7 is held in a perforated polystyrene container 4 between a spring 8 and a tight-fitting lid 9 through which the anode connection 10 passes and a helical coil cathode 4 of Ag, Ni or stainless steel surrounds the container. By suitable choice of anodizing time all the faces of the silicon slices in the stack may be oxidized. <PICT:1031325/C6-C7/1>
GB5555/65A 1965-02-09 1965-02-09 Method of anodically oxidising the surfaces of semiconductor bodies Expired GB1031325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5555/65A GB1031325A (en) 1965-02-09 1965-02-09 Method of anodically oxidising the surfaces of semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5555/65A GB1031325A (en) 1965-02-09 1965-02-09 Method of anodically oxidising the surfaces of semiconductor bodies

Publications (1)

Publication Number Publication Date
GB1031325A true GB1031325A (en) 1966-06-02

Family

ID=9798335

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5555/65A Expired GB1031325A (en) 1965-02-09 1965-02-09 Method of anodically oxidising the surfaces of semiconductor bodies

Country Status (1)

Country Link
GB (1) GB1031325A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2001102A (en) * 1977-07-01 1979-01-24 Oronzio De Nora Impianti Monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2001102A (en) * 1977-07-01 1979-01-24 Oronzio De Nora Impianti Monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells
GB2001102B (en) * 1977-07-01 1982-01-20 Oronzio De Nora Impianti Improvements relating to monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells

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