GB1029473A - Improvements in or relating to the production of ultra-pure silicon carbide - Google Patents

Improvements in or relating to the production of ultra-pure silicon carbide

Info

Publication number
GB1029473A
GB1029473A GB8164/63A GB816463A GB1029473A GB 1029473 A GB1029473 A GB 1029473A GB 8164/63 A GB8164/63 A GB 8164/63A GB 816463 A GB816463 A GB 816463A GB 1029473 A GB1029473 A GB 1029473A
Authority
GB
United Kingdom
Prior art keywords
silicon
silicon carbide
ultra
methane
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8164/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1029473A publication Critical patent/GB1029473A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
GB8164/63A 1962-03-06 1963-02-28 Improvements in or relating to the production of ultra-pure silicon carbide Expired GB1029473A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES78347A DE1215665B (de) 1962-03-06 1962-03-06 Verfahren zum Herstellen von hochreinem Siliziumkarbid

Publications (1)

Publication Number Publication Date
GB1029473A true GB1029473A (en) 1966-05-11

Family

ID=7507399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8164/63A Expired GB1029473A (en) 1962-03-06 1963-02-28 Improvements in or relating to the production of ultra-pure silicon carbide

Country Status (3)

Country Link
BE (1) BE629139A (de)
DE (1) DE1215665B (de)
GB (1) GB1029473A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023071626A (ja) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド 高純度のＳｉＣ結晶体の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1228235B (de) * 1964-03-02 1966-11-10 Siemens Ag Verfahren zum Herstellen einkristalliner Staebe aus Siliciumcarbid
DE1236482B (de) * 1964-03-02 1967-03-16 Siemens Ag Verfahren zum Herstellen einkristalliner Schichten aus vorzugsweise hexagonalem Siliciumkarbid
CN106044774B (zh) * 2016-05-31 2018-02-27 上海纳晶科技有限公司 一种低温低成本高纯碳化硅超细微粒的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023071626A (ja) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド 高純度のＳｉＣ結晶体の製造方法
EP4190748A1 (de) 2021-11-11 2023-06-07 OCI Company Ltd. Verfahren zur herstellung eines hochreinen sic-kristalls

Also Published As

Publication number Publication date
BE629139A (de)
DE1215665B (de) 1966-05-05

Similar Documents

Publication Publication Date Title
US3960619A (en) Process for preparing layers of silicon carbide on a silicon substrate
GB760664A (en) Piston rings, especially for internal combustion engines
GB1039748A (en) Improvements relating to methods of growing silicon carbide crystals epitaxially
GB1054518A (de)
GB1029473A (en) Improvements in or relating to the production of ultra-pure silicon carbide
KR950011327A (ko) 단일 유기규소 화합물을 이용한 탄화규소 막의 제조
Foo et al. Synthesis and carbon-hydrogen activation reactions of. eta. 5-indenyl (trimethylphosphine) iridium alkyl and hydride complexes
Stringfellow Alternate sources and growth chemistry for OMVPE and CBE processes
US3755541A (en) Method and device for manufacturing silicon carbide
Miller et al. Pyrolysis studies of the single-source gallium arsenide precursors [Me2Ga (. mu.-As-i-Pr2)] 3,[Me2Ga (. mu.-AsMe2)] 3,[Me2Ga (. mu.-As-t-Bu2)] 2, and [Et2Ga (. mu.-As-t-Bu2)] 2
GB875749A (en) Improvements in the preparation of boron nitride
ES347731A1 (es) Procedimiento para obtener cloruro de vinilo.
Leigh et al. The Pyrolysis of n‐Butyl‐Benzene and the Heat of Formation of n‐Propyl Radical
GB988097A (en) Process for the manufacture of very pure silicon carbide
Lexton et al. The reaction of hydrogen atoms with propylene
Minagawa et al. Equilibrium computation for the growth of alpha silicon carbide from silane and propane in the presence of hydrogen or an inert gas
Fogarasi et al. Vibrational spectra and conformation of cyclic methylsiloxanes
US3361600A (en) Method of doping epitaxially grown semiconductor material
Trotman‐Dickenson Entropy Changes in Free Radical Reactions
GB1237952A (de)
GB1071366A (en) Improvements in and relating to vapour transport of semiconductor materials
Hiraoka et al. Ab initio study on the reaction of trimethylgallium with hydrogen molecule
GB947780A (en) Heterocyclic boron compounds and a process for their production
GB792274A (en) Bodies having films of carbon, boron and silicon deposited thereon and methods of making such deposits
Wason et al. Infrared Spectrum of HBBr2 (g)