GB1028933A - Improvements relating to devices incorporating cadmium sulphide crystals - Google Patents
Improvements relating to devices incorporating cadmium sulphide crystalsInfo
- Publication number
- GB1028933A GB1028933A GB3425661A GB3425661A GB1028933A GB 1028933 A GB1028933 A GB 1028933A GB 3425661 A GB3425661 A GB 3425661A GB 3425661 A GB3425661 A GB 3425661A GB 1028933 A GB1028933 A GB 1028933A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- improvements relating
- devices incorporating
- indium
- cadmium sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/26—Measuring radiation intensity with resistance detectors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
1,028,933. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Aug. 28, 1962 [Sept. 25, 1961], No. 34256/61. Heading H1K. A semi - conductor device for detecting radiation comprises a hollow CdS crystal with one electrode connected to its inner surface and another to its outer surface. Fig. 2 shows the crystal 10 with a support wire electrode 14 embedded in an indium mass 13 which has been fused to the crystal and the other support wire electrode 15 is embedded in an indium layer 11 on the top of the crystal. Gallium may be used in place of indium. The assembly is sealed in a metal housing 16 which is transparent to gamma rays.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3425661A GB1028933A (en) | 1961-09-25 | 1961-09-25 | Improvements relating to devices incorporating cadmium sulphide crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3425661A GB1028933A (en) | 1961-09-25 | 1961-09-25 | Improvements relating to devices incorporating cadmium sulphide crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1028933A true GB1028933A (en) | 1966-05-11 |
Family
ID=10363369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3425661A Expired GB1028933A (en) | 1961-09-25 | 1961-09-25 | Improvements relating to devices incorporating cadmium sulphide crystals |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1028933A (en) |
-
1961
- 1961-09-25 GB GB3425661A patent/GB1028933A/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1529145A (en) | Package for light-triggered semiconductor device | |
GB1068208A (en) | Semiconductor device | |
GB991940A (en) | Manufacture of semiconductor devices | |
GB1028933A (en) | Improvements relating to devices incorporating cadmium sulphide crystals | |
GB1238745A (en) | ||
GB1031890A (en) | Crystal rectifiers and mountings therefor | |
GB1193716A (en) | Improvements in and relating to Semiconductor Devices | |
GB1237695A (en) | Photosensitive devices | |
GB1058753A (en) | Improvements relating to solid state devices | |
GB881579A (en) | Improvements in or relating to semi-conductor devices | |
AU254023B2 (en) | Sealed semiconductor device and mounting means therefor | |
GB938342A (en) | Photo-cell assemblies incorporating vapour seals | |
BELL | Short-period relations between north-south asymmetry in sunspots and in solar storm sources | |
GB1004341A (en) | Improvements in or relating to electric circuit elements | |
AU1364662A (en) | Sealed semiconductor device and mounting means therefor | |
AU234762B2 (en) | Improvements in or relating to semiconductor barrier layer systems, more particularly transistors or crystal diodes provided with hermetically sealed envelopes and methods for manufacturing such systems | |
GB832584A (en) | Improvements in or relating to semi-conductor crystal diodes | |
CA644596A (en) | Electrical devices having hermetically sealed envelopes | |
BELL | Examination of short-period relations between north-south asymmetry in spottedness of the solar hemispheres and great geomagnetic storm sources | |
GB874800A (en) | Improvements in or relating to semi-conductive devices | |
JPS51122376A (en) | Method of manufacture of glass sealed semiconductor | |
GB966320A (en) | Improvements in or relating to methods of manufacturing semi-conductor devices | |
GB1289362A (en) | ||
AU228378B2 (en) | Semiconductor devices and mounting arrangements therefor | |
AU5274259A (en) | Improvements in or relating to semiconductor barrier layer systems, more particularly transistors or crystal diodes provided with hermetically sealed envelopes and methods for manufacturing such systems |