GB1023591A - Improvements in or relating to solid state circuits - Google Patents

Improvements in or relating to solid state circuits

Info

Publication number
GB1023591A
GB1023591A GB3132263A GB3132263A GB1023591A GB 1023591 A GB1023591 A GB 1023591A GB 3132263 A GB3132263 A GB 3132263A GB 3132263 A GB3132263 A GB 3132263A GB 1023591 A GB1023591 A GB 1023591A
Authority
GB
United Kingdom
Prior art keywords
transistor
region
diode
wafer
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3132263A
Inventor
Carl Peter Sandbank
Robert Walter Alister Scarr
Eric Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL291538D priority Critical patent/NL291538A/xx
Priority to BE631066D priority patent/BE631066A/xx
Priority to DENDAT1287696D priority patent/DE1287696B/de
Priority to CH452163A priority patent/CH423995A/en
Priority to DEJ23535A priority patent/DE1282188B/en
Priority to US273062A priority patent/US3244939A/en
Priority to FR931635A priority patent/FR1354552A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3132263A priority patent/GB1023591A/en
Priority to GB378564A priority patent/GB1036164A/en
Priority to NL6408106A priority patent/NL6408106A/xx
Priority to BE651446D priority patent/BE651446A/xx
Priority to FR984543A priority patent/FR86320E/en
Priority to DE1439529A priority patent/DE1439529B2/en
Priority to DEST22571A priority patent/DE1292758B/en
Priority to NL6409848A priority patent/NL6409848A/xx
Priority to NL6409849A priority patent/NL6409849A/xx
Priority to FR986227A priority patent/FR86819E/en
Priority to BE652660D priority patent/BE652660A/xx
Priority to DEST22635A priority patent/DE1292761B/en
Priority to FR989359A priority patent/FR86957E/en
Priority to CH1250264A priority patent/CH471468A/en
Priority to BE653537D priority patent/BE653537A/xx
Publication of GB1023591A publication Critical patent/GB1023591A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

1,023,591. Solid circuits. STANDARD TELEPHONES & CABLES Ltd. Aug. 8, 1963, No. 31322/63. Heading H1K. A solid state circuit including a transistor and PN diode is made by diffusing a first impurity of one conductivity type into one surface of a wafer of the opposite conductivity to form the base zone of the transistor and one region of the diode and subsequently diffusing impurity of said opposite type into these regions to form the transistor emitter zone and the other region of the diode. The one region of the diode is subsequently shortcircuited to the bulk of the wafer, constituting the transistor collector, bya metal layer alloyed to the wafer surface. A NOR circuit of this type shown at an intermediate stage of manufacture, Figs. 8 and 9 (not shown) is made as follows: An apertured oxide film is formed on an N-type silicon layer epitaxially deposited on an N + silicon substrate by oxidation and photoresist and etching technique, and acceptor impurity diffused through the apertures in an oxidizing atmosphere to form P- zones 71, 73, 74, 76 (Fig. 7). 73 is a transistor base, 76 one region of several diodes, 71 an isolating region and 74 a resistive track. Donor impurity is diffused through a second similarly formed mask to form zones 72, 75, 77, 78 overlying the P-zones and zone 79 alongside P-zone 76. Of these 72 and 77 constitute resistors, 75 the transistor emitter and 78 the other regions of the diodes. The wafer is again masked, aluminium evaporated over the entire masked surface to contact the various zones at 80-89 (Fig. 8, not shown) and residual aluminium removed by etching through a mask. Contact 86 provides the short-circuiting connection. Finally aluminium interconnections are evaporated on (Fig. 10, not shown) through a mask to complete the circuit diagrammed in Fig. 1 (also not shown). A graded chromiumgold film as described in Specification 1,023,531 may be used instead of aluminium for the contacts. In addition, germanium may be used in place of silicon, in which case the masking layers are formed of vapour-deposited silicon monoxide.
GB3132263A 1962-04-16 1963-08-08 Improvements in or relating to solid state circuits Expired GB1023591A (en)

Priority Applications (22)

Application Number Priority Date Filing Date Title
NL291538D NL291538A (en) 1962-04-16
BE631066D BE631066A (en) 1962-04-16
DENDAT1287696D DE1287696B (en) 1962-04-16
CH452163A CH423995A (en) 1962-04-16 1963-04-09 Method of mounting and encapsulating a semiconductor device
DEJ23535A DE1282188B (en) 1962-04-16 1963-04-11 Electrical semiconductor arrangement with several strip-shaped supply lines isolated from one another
US273062A US3244939A (en) 1962-04-16 1963-04-15 Encapsulated die bonded hybrid integrated circuit
FR931635A FR1354552A (en) 1962-04-16 1963-04-16 Manufacturing process applicable to semiconductor electronic components for printed circuits
GB3132263A GB1023591A (en) 1963-08-08 1963-08-08 Improvements in or relating to solid state circuits
GB378564A GB1036164A (en) 1962-04-16 1964-01-29 Improvements in or relating to semiconductor devices
NL6408106A NL6408106A (en) 1962-04-16 1964-07-16
BE651446D BE651446A (en) 1962-04-16 1964-08-06
FR984543A FR86320E (en) 1962-04-16 1964-08-07 Manufacturing process applicable to semiconductor electronic components for printed circuits
DE1439529A DE1439529B2 (en) 1962-04-16 1964-08-12 : Semiconductor component with a planar semiconductor element on a bonding plate and method for producing the same
DEST22571A DE1292758B (en) 1962-04-16 1964-08-21 Electric semiconductor component
NL6409848A NL6409848A (en) 1962-04-16 1964-08-26
NL6409849A NL6409849A (en) 1962-04-16 1964-08-26
FR986227A FR86819E (en) 1962-04-16 1964-08-26 Manufacturing process applicable to semiconductor electronic components for printed circuits
BE652660D BE652660A (en) 1962-04-16 1964-09-04
DEST22635A DE1292761B (en) 1962-04-16 1964-09-05 Planar semiconductor device and method for its manufacture
FR989359A FR86957E (en) 1962-04-16 1964-09-25 Manufacturing process applicable to semiconductor electronic components for printed circuits
CH1250264A CH471468A (en) 1962-04-16 1964-09-25 Electric semiconductor device
BE653537D BE653537A (en) 1962-04-16 1964-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3132263A GB1023591A (en) 1963-08-08 1963-08-08 Improvements in or relating to solid state circuits

Publications (1)

Publication Number Publication Date
GB1023591A true GB1023591A (en) 1966-03-23

Family

ID=10321407

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3132263A Expired GB1023591A (en) 1962-04-16 1963-08-08 Improvements in or relating to solid state circuits

Country Status (1)

Country Link
GB (1) GB1023591A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD383678S (en) 1995-12-14 1997-09-16 Reckitt & Colman Inc. Angle-necked bottle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD383678S (en) 1995-12-14 1997-09-16 Reckitt & Colman Inc. Angle-necked bottle

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