GB1002267A - Improvements in and relating to electric signal-translating devices, and the manufacture thereof - Google Patents
Improvements in and relating to electric signal-translating devices, and the manufacture thereofInfo
- Publication number
- GB1002267A GB1002267A GB45140/62A GB4514062A GB1002267A GB 1002267 A GB1002267 A GB 1002267A GB 45140/62 A GB45140/62 A GB 45140/62A GB 4514062 A GB4514062 A GB 4514062A GB 1002267 A GB1002267 A GB 1002267A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- collector
- base
- contacts
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B18/00—Shaping glass in contact with the surface of a liquid
- C03B18/02—Forming sheets
- C03B18/04—Changing or regulating the dimensions of the molten glass ribbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/957—Making metal-insulator-metal device
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Control Of Charge By Means Of Generators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US155726A US3254276A (en) | 1961-11-29 | 1961-11-29 | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1002267A true GB1002267A (en) | 1965-08-25 |
Family
ID=47045249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB45140/62A Expired GB1002267A (en) | 1961-11-29 | 1962-11-29 | Improvements in and relating to electric signal-translating devices, and the manufacture thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3254276A (enExample) |
| BE (1) | BE625476A (enExample) |
| ES (1) | ES281118A1 (enExample) |
| FR (1) | FR1343659A (enExample) |
| GB (1) | GB1002267A (enExample) |
| NL (1) | NL286122A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2693474A3 (en) * | 2012-07-31 | 2014-10-08 | Ixys Corporation | Method of manufacturing a silver bond pad on a semiconductor power device using silver nanopaste, as well as an assembly including said semiconductor device |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1273698B (de) * | 1964-01-08 | 1968-07-25 | Telefunken Patent | Halbleiteranordnung |
| US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
| DE1464880B2 (de) * | 1964-05-05 | 1970-11-12 | Danfoss A/S, Nordborg (Dänemark) | Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen |
| US3368919A (en) * | 1964-07-29 | 1968-02-13 | Sylvania Electric Prod | Composite protective coat for thin film devices |
| DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
| US3569801A (en) * | 1969-06-02 | 1971-03-09 | Gen Electric | Thin film triodes and method of forming |
| US4818565A (en) * | 1987-10-30 | 1989-04-04 | Regents Of The University Of Minnesota | Method to stabilize metal contacts on mercury-cadmium-telluride alloys |
| FR2754386B1 (fr) * | 1996-10-03 | 1998-10-30 | Commissariat Energie Atomique | Structure comprenant une partie isolee dans un substrat massif et procede de realisation d'une telle structure |
| WO2005006393A2 (en) * | 2003-05-27 | 2005-01-20 | Triton Systems, Inc. | Pinhold porosity free insulating films on flexible metallic substrates for thin film applications |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| US2849342A (en) * | 1953-03-17 | 1958-08-26 | Rca Corp | Semiconductor devices and method of making them |
| US2861017A (en) * | 1953-09-30 | 1958-11-18 | Honeywell Regulator Co | Method of preparing semi-conductor devices |
| US2778980A (en) * | 1954-08-30 | 1957-01-22 | Gen Electric | High power junction semiconductor device |
| US2842668A (en) * | 1955-05-25 | 1958-07-08 | Ibm | High frequency transistor oscillator |
| BE549320A (enExample) * | 1955-09-02 | |||
| US2953693A (en) * | 1957-02-27 | 1960-09-20 | Westinghouse Electric Corp | Semiconductor diode |
| NL233303A (enExample) * | 1957-11-30 | |||
| US3098160A (en) * | 1958-02-24 | 1963-07-16 | Clevite Corp | Field controlled avalanche semiconductive device |
| US3040266A (en) * | 1958-06-16 | 1962-06-19 | Union Carbide Corp | Surface field effect transistor amplifier |
| US3024140A (en) * | 1960-07-05 | 1962-03-06 | Space Technology Lab Inc | Nonlinear electrical arrangement |
| US3135926A (en) * | 1960-09-19 | 1964-06-02 | Gen Motors Corp | Composite field effect transistor |
-
1961
- 1961-11-29 US US155726A patent/US3254276A/en not_active Expired - Lifetime
-
1962
- 1962-09-27 ES ES281118A patent/ES281118A1/es not_active Expired
- 1962-10-08 FR FR911603A patent/FR1343659A/fr not_active Expired
- 1962-11-29 BE BE625476D patent/BE625476A/fr unknown
- 1962-11-29 GB GB45140/62A patent/GB1002267A/en not_active Expired
- 1962-11-29 NL NL286122D patent/NL286122A/nl unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2693474A3 (en) * | 2012-07-31 | 2014-10-08 | Ixys Corporation | Method of manufacturing a silver bond pad on a semiconductor power device using silver nanopaste, as well as an assembly including said semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US3254276A (en) | 1966-05-31 |
| BE625476A (enExample) | 1963-03-15 |
| ES281118A1 (es) | 1963-03-01 |
| NL286122A (enExample) | 1965-02-10 |
| FR1343659A (fr) | 1963-11-22 |
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