GB0720857D0 - Heat treatment for forming interconnect structures with reduced electro and stress migration and/or resistivity - Google Patents

Heat treatment for forming interconnect structures with reduced electro and stress migration and/or resistivity

Info

Publication number
GB0720857D0
GB0720857D0 GBGB0720857.2A GB0720857A GB0720857D0 GB 0720857 D0 GB0720857 D0 GB 0720857D0 GB 0720857 A GB0720857 A GB 0720857A GB 0720857 D0 GB0720857 D0 GB 0720857D0
Authority
GB
United Kingdom
Prior art keywords
resistivity
heat treatment
interconnect structures
stress migration
forming interconnect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0720857.2A
Other versions
GB2439884B (en
GB2439884A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102005020061.3A external-priority patent/DE102005020061B4/en
Priority claimed from US11/292,537 external-priority patent/US7375031B2/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0720857D0 publication Critical patent/GB0720857D0/en
Publication of GB2439884A publication Critical patent/GB2439884A/en
Application granted granted Critical
Publication of GB2439884B publication Critical patent/GB2439884B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB0720857A 2005-03-31 2006-03-30 Heat treatment for forming interconnect structures with reduced electro and stress migration and/or resistivity Expired - Fee Related GB2439884B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102005014751 2005-03-31
DE102005020061.3A DE102005020061B4 (en) 2005-03-31 2005-04-29 Technique for making interconnect structures with reduced electrical and stress migration and / or lower resistance
US11/292,537 US7375031B2 (en) 2005-04-29 2005-12-02 Technique for forming interconnect structures with reduced electro and stress migration and/or resistivity
PCT/US2006/011695 WO2006105320A1 (en) 2005-03-31 2006-03-30 Heat treatment for forming interconnect structures with reduced electro and stress migration and/or resistivity

Publications (3)

Publication Number Publication Date
GB0720857D0 true GB0720857D0 (en) 2007-12-05
GB2439884A GB2439884A (en) 2008-01-09
GB2439884B GB2439884B (en) 2008-11-05

Family

ID=36676041

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0720857A Expired - Fee Related GB2439884B (en) 2005-03-31 2006-03-30 Heat treatment for forming interconnect structures with reduced electro and stress migration and/or resistivity

Country Status (3)

Country Link
KR (1) KR101273929B1 (en)
GB (1) GB2439884B (en)
WO (1) WO2006105320A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11562773B2 (en) * 2019-09-27 2023-01-24 Micron Technology, Inc. Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793258B2 (en) * 1985-12-04 1995-10-09 富士通株式会社 Recrystallization method for conductor film
EP1087432A1 (en) * 1999-09-24 2001-03-28 Interuniversitair Micro-Elektronica Centrum Vzw A method for improving the quality of a metal layer deposited from a plating bath
US6303476B1 (en) * 2000-06-12 2001-10-16 Ultratech Stepper, Inc. Thermally induced reflectivity switch for laser thermal processing
DE10217876A1 (en) * 2002-04-22 2003-11-06 Infineon Technologies Ag Process for the production of thin metal-containing layers with low electrical resistance
US20040010448A1 (en) * 2002-07-12 2004-01-15 Miller William E. System and method for marketing advertising space on disposable consumer items
US6835657B2 (en) * 2002-12-02 2004-12-28 Applied Materials, Inc. Method for recrystallizing metal in features of a semiconductor chip

Also Published As

Publication number Publication date
KR101273929B1 (en) 2013-06-11
WO2006105320A1 (en) 2006-10-05
GB2439884B (en) 2008-11-05
KR20080002899A (en) 2008-01-04
GB2439884A (en) 2008-01-09

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120330