GB0619080D0 - Method of forming sidewall spacers - Google Patents
Method of forming sidewall spacersInfo
- Publication number
- GB0619080D0 GB0619080D0 GBGB0619080.5A GB0619080A GB0619080D0 GB 0619080 D0 GB0619080 D0 GB 0619080D0 GB 0619080 A GB0619080 A GB 0619080A GB 0619080 D0 GB0619080 D0 GB 0619080D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- sidewall spacers
- forming sidewall
- forming
- spacers
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 125000006850 spacer group Chemical group 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004015864A DE102004015864B4 (en) | 2004-03-31 | 2004-03-31 | Method for forming sidewall spacers |
US11/039,084 US20050233532A1 (en) | 2004-03-31 | 2005-01-19 | Method of forming sidewall spacers |
PCT/US2005/010475 WO2005098929A2 (en) | 2004-03-31 | 2005-03-29 | Method of forming sidewall spacers |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0619080D0 true GB0619080D0 (en) | 2006-11-08 |
GB2427076A GB2427076A (en) | 2006-12-13 |
Family
ID=34965334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0619080A Withdrawn GB2427076A (en) | 2004-03-31 | 2005-03-29 | Method of forming sidewall spacers |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007532001A (en) |
KR (1) | KR20060134190A (en) |
GB (1) | GB2427076A (en) |
WO (1) | WO2005098929A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100847831B1 (en) * | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | Method of Manufacturing Semiconductor Device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224363A (en) * | 1987-03-13 | 1988-09-19 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPH0779101B2 (en) * | 1989-05-24 | 1995-08-23 | 株式会社東芝 | Manufacturing method of semiconductor device |
JPH03101238A (en) * | 1989-09-14 | 1991-04-26 | Toshiba Corp | Mos type semiconductor device and its manufacture |
JPH06177148A (en) * | 1992-12-08 | 1994-06-24 | Sony Corp | Fabrication of insulated gate field-effect transistor |
US6013569A (en) * | 1997-07-07 | 2000-01-11 | United Microelectronics Corp. | One step salicide process without bridging |
US6049114A (en) * | 1998-07-20 | 2000-04-11 | Motorola, Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
US6063704A (en) * | 1999-08-02 | 2000-05-16 | National Semiconductor Corporation | Process for incorporating silicon oxynitride DARC layer into formation of silicide polysilicon contact |
US6200886B1 (en) * | 1999-10-28 | 2001-03-13 | United Silicon Incorporated | Fabricating process for polysilicon gate |
US6465853B1 (en) * | 2001-05-08 | 2002-10-15 | Motorola, Inc. | Method for making semiconductor device |
-
2005
- 2005-03-29 KR KR1020067022899A patent/KR20060134190A/en not_active Application Discontinuation
- 2005-03-29 WO PCT/US2005/010475 patent/WO2005098929A2/en active Application Filing
- 2005-03-29 JP JP2007506459A patent/JP2007532001A/en active Pending
- 2005-03-29 GB GB0619080A patent/GB2427076A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2005098929A2 (en) | 2005-10-20 |
GB2427076A (en) | 2006-12-13 |
JP2007532001A (en) | 2007-11-08 |
KR20060134190A (en) | 2006-12-27 |
WO2005098929A3 (en) | 2005-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL180742A0 (en) | Method of manufacture | |
GB2421854B (en) | Method of asymmetric sidewall spacer formation | |
HK1103722A1 (en) | Production method | |
EP1890550A4 (en) | Method of forming dough | |
HK1091032A1 (en) | Method of forming external electrode | |
GB0409610D0 (en) | Improved method of settling commercial indebtedness | |
IL181303A0 (en) | Method for the production of dihydropteridinones | |
ZA200609923B (en) | 2-butanol production method | |
IL183397A0 (en) | Method for the production of shaped silica aquagels | |
EP1919477A4 (en) | Method of improving wakefulness | |
SG115793A1 (en) | Method of removing studs | |
EP1794099A4 (en) | Method of forming an in-situ recessed structure | |
GB0619080D0 (en) | Method of forming sidewall spacers | |
GB0410103D0 (en) | New method | |
GB0511084D0 (en) | An improved method of manufacturing tiles | |
GB0415547D0 (en) | Method of printing | |
ZA200800590B (en) | Method of improving wakefulness | |
PL367920A1 (en) | Method for manufacture of oligoetheroles | |
PL370547A1 (en) | Method for manufacture of branched-structure polyestroles | |
PL384045A1 (en) | METHOD FOR MANUFACTURE of OLANZAPINE | |
GB0413897D0 (en) | Method of lifting an object | |
HU0401136D0 (en) | Method for post-blinding of gas-plumbing | |
PL370870A1 (en) | Method for fabrication of briquettes | |
PL366960A1 (en) | Method for modification of bio-membranes | |
GB0400351D0 (en) | Method of insulation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |