GB0603682D0 - Integrated circuit manufacturing - Google Patents

Integrated circuit manufacturing

Info

Publication number
GB0603682D0
GB0603682D0 GB0603682A GB0603682A GB0603682D0 GB 0603682 D0 GB0603682 D0 GB 0603682D0 GB 0603682 A GB0603682 A GB 0603682A GB 0603682 A GB0603682 A GB 0603682A GB 0603682 D0 GB0603682 D0 GB 0603682D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit manufacturing
manufacturing
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0603682A
Other versions
GB2439357C (en
GB2439357B (en
GB2439357A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INNOS Ltd
Original Assignee
INNOS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INNOS Ltd filed Critical INNOS Ltd
Priority to GB0603682A priority Critical patent/GB2439357C/en
Publication of GB0603682D0 publication Critical patent/GB0603682D0/en
Priority to PCT/GB2007/000408 priority patent/WO2007096581A2/en
Publication of GB2439357A publication Critical patent/GB2439357A/en
Application granted granted Critical
Publication of GB2439357B publication Critical patent/GB2439357B/en
Publication of GB2439357C publication Critical patent/GB2439357C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6644Packaging aspects of high-frequency amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB0603682A 2006-02-23 2006-02-23 Integrated circuit manufacturing Expired - Fee Related GB2439357C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0603682A GB2439357C (en) 2006-02-23 2006-02-23 Integrated circuit manufacturing
PCT/GB2007/000408 WO2007096581A2 (en) 2006-02-23 2007-02-06 Radio frequency integrated circuit manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0603682A GB2439357C (en) 2006-02-23 2006-02-23 Integrated circuit manufacturing

Publications (4)

Publication Number Publication Date
GB0603682D0 true GB0603682D0 (en) 2006-04-05
GB2439357A GB2439357A (en) 2007-12-27
GB2439357B GB2439357B (en) 2008-06-04
GB2439357C GB2439357C (en) 2008-08-13

Family

ID=36178658

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0603682A Expired - Fee Related GB2439357C (en) 2006-02-23 2006-02-23 Integrated circuit manufacturing

Country Status (2)

Country Link
GB (1) GB2439357C (en)
WO (1) WO2007096581A2 (en)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135385A (en) * 1975-03-06 1976-11-24 Texas Instruments Inc Method of producing semiconductor device
US4400411A (en) * 1982-07-19 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Technique of silicon epitaxial refill
JP2643262B2 (en) * 1988-03-23 1997-08-20 日本電気株式会社 Method for manufacturing semiconductor device
KR890017771A (en) * 1988-05-20 1989-12-18 강진구 Semiconductor device manufacturing method
JPH03296247A (en) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5266517A (en) * 1991-12-17 1993-11-30 Texas Instruments Incorporated Method for forming a sealed interface on a semiconductor device
US5559349A (en) * 1995-03-07 1996-09-24 Northrop Grumman Corporation Silicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrate
US5554562A (en) * 1995-04-06 1996-09-10 Advanced Micro Devices, Inc. Advanced isolation scheme for deep submicron technology
JP3604791B2 (en) * 1995-11-09 2004-12-22 株式会社ルネサステクノロジ Method for manufacturing semiconductor device
KR0167274B1 (en) * 1995-12-07 1998-12-15 문정환 Cmos analog semiconductor device and its manufacture
US5780343A (en) * 1995-12-20 1998-07-14 National Semiconductor Corporation Method of producing high quality silicon surface for selective epitaxial growth of silicon
KR100209278B1 (en) * 1995-12-30 1999-07-15 김영환 Method manufacturing & polyresistor structure of semiconductor device
US5939753A (en) * 1997-04-02 1999-08-17 Motorola, Inc. Monolithic RF mixed signal IC with power amplification
US6489200B1 (en) * 2000-07-11 2002-12-03 Winbond Electronics Corporation Capacitor fabrication process for analog flash memory devices
KR100345516B1 (en) * 2000-09-05 2002-07-24 아남반도체 주식회사 Radio frequency integrated circuit device and manufacturing method thereof
US6645790B2 (en) * 2001-01-03 2003-11-11 Anadigics, Inc. System and method for prototyping and fabricating complex microwave circuits
JP2002313932A (en) * 2001-04-12 2002-10-25 Fujitsu Ltd Semiconductor device and method of manufacturing the same
JP4898024B2 (en) * 2001-06-21 2012-03-14 セイコーインスツル株式会社 Manufacturing method of semiconductor device
JP2003224201A (en) * 2002-01-31 2003-08-08 Mitsubishi Electric Corp Semiconductor device and its fabricating method
US6486017B1 (en) * 2002-06-04 2002-11-26 Chartered Semiconductor Manufacturing Ltd. Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition
JP2004119709A (en) * 2002-09-26 2004-04-15 Nec Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
GB2439357C (en) 2008-08-13
GB2439357B (en) 2008-06-04
GB2439357A (en) 2007-12-27
WO2007096581A3 (en) 2007-11-08
WO2007096581A2 (en) 2007-08-30

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20111201 AND 20111207

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20160804 AND 20160810

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20210223