GB0229427D0 - Annealing method and device - Google Patents

Annealing method and device

Info

Publication number
GB0229427D0
GB0229427D0 GB0229427A GB0229427A GB0229427D0 GB 0229427 D0 GB0229427 D0 GB 0229427D0 GB 0229427 A GB0229427 A GB 0229427A GB 0229427 A GB0229427 A GB 0229427A GB 0229427 D0 GB0229427 D0 GB 0229427D0
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
device
annealing method
annealing
method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0229427A
Other versions
GB2396481A (en )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L37/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L37/02Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below Curie point, e.g. pyroelectric devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02354Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators
GB0229427A 2002-12-18 2002-12-18 Annealing method and device Withdrawn GB0229427D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0229427A GB0229427D0 (en) 2002-12-18 2002-12-18 Annealing method and device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0229427A GB0229427D0 (en) 2002-12-18 2002-12-18 Annealing method and device
AU2003292427A AU2003292427A1 (en) 2002-12-18 2003-12-16 Annealing method and device
PCT/GB2003/005499 WO2004055880A1 (en) 2002-12-18 2003-12-16 Annealing method and device

Publications (2)

Publication Number Publication Date
GB0229427D0 true GB0229427D0 (en) 2003-01-22
GB2396481A true GB2396481A (en) 2004-06-23

Family

ID=9949871

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0229427A Withdrawn GB0229427D0 (en) 2002-12-18 2002-12-18 Annealing method and device

Country Status (2)

Country Link
GB (1) GB0229427D0 (en)
WO (1) WO2004055880A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310990A (en) * 1991-06-03 1994-05-10 The United Stated Of America As Represented By The Secretary Of The Navy Method of laser processing ferroelectric materials
GB9905098D0 (en) * 1999-03-06 1999-04-28 Secr Defence Improvements relating to annealing
US6887716B2 (en) * 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP4135857B2 (en) * 2001-03-27 2008-08-20 日本電気株式会社 Method for manufacturing an infrared sensor
US20020140012A1 (en) * 2001-03-30 2002-10-03 Motorola, Inc. Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same

Also Published As

Publication number Publication date Type
WO2004055880A1 (en) 2004-07-01 application
GB2396481A (en) 2004-06-23 application

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)