AU2003292427A1 - Annealing method and device - Google Patents
Annealing method and deviceInfo
- Publication number
- AU2003292427A1 AU2003292427A1 AU2003292427A AU2003292427A AU2003292427A1 AU 2003292427 A1 AU2003292427 A1 AU 2003292427A1 AU 2003292427 A AU2003292427 A AU 2003292427A AU 2003292427 A AU2003292427 A AU 2003292427A AU 2003292427 A1 AU2003292427 A1 AU 2003292427A1
- Authority
- AU
- Australia
- Prior art keywords
- annealing method
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000137 annealing Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0229427A GB2396481A (en) | 2002-12-18 | 2002-12-18 | Laser annealing method and device |
GB0229427.0 | 2002-12-18 | ||
PCT/GB2003/005499 WO2004055880A1 (en) | 2002-12-18 | 2003-12-16 | Annealing method and device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003292427A1 true AU2003292427A1 (en) | 2004-07-09 |
Family
ID=9949871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003292427A Abandoned AU2003292427A1 (en) | 2002-12-18 | 2003-12-16 | Annealing method and device |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003292427A1 (en) |
GB (1) | GB2396481A (en) |
WO (1) | WO2004055880A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7622374B2 (en) | 2005-12-29 | 2009-11-24 | Infineon Technologies Ag | Method of fabricating an integrated circuit |
CN108559954B (en) * | 2018-03-30 | 2020-01-21 | 湖北大学 | Preparation method of negative thermal expansion lead zirconate titanate film |
US20240074207A1 (en) * | 2022-08-25 | 2024-02-29 | International Business Machines Corporation | Localized anneal of ferroelectric dielectric |
CN116261337B (en) * | 2023-05-15 | 2023-12-22 | 宁德时代新能源科技股份有限公司 | Perovskite battery, photovoltaic module, photovoltaic power generation system and electric equipment |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310990A (en) * | 1991-06-03 | 1994-05-10 | The United Stated Of America As Represented By The Secretary Of The Navy | Method of laser processing ferroelectric materials |
GB2347788A (en) * | 1999-03-06 | 2000-09-13 | Secr Defence | Forming devices such as ferroelectric infra-red sensors by annealing |
US6887716B2 (en) * | 2000-12-20 | 2005-05-03 | Fujitsu Limited | Process for producing high quality PZT films for ferroelectric memory integrated circuits |
JP4135857B2 (en) * | 2001-03-27 | 2008-08-20 | 独立行政法人産業技術総合研究所 | Infrared sensor manufacturing method |
US20020140012A1 (en) * | 2001-03-30 | 2002-10-03 | Motorola, Inc. | Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same |
-
2002
- 2002-12-18 GB GB0229427A patent/GB2396481A/en not_active Withdrawn
-
2003
- 2003-12-16 WO PCT/GB2003/005499 patent/WO2004055880A1/en not_active Application Discontinuation
- 2003-12-16 AU AU2003292427A patent/AU2003292427A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2004055880A1 (en) | 2004-07-01 |
GB2396481A (en) | 2004-06-23 |
GB0229427D0 (en) | 2003-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |