GB0227446D0 - Improvements relating to a deposition process - Google Patents

Improvements relating to a deposition process

Info

Publication number
GB0227446D0
GB0227446D0 GB0227446A GB0227446A GB0227446D0 GB 0227446 D0 GB0227446 D0 GB 0227446D0 GB 0227446 A GB0227446 A GB 0227446A GB 0227446 A GB0227446 A GB 0227446A GB 0227446 D0 GB0227446 D0 GB 0227446D0
Authority
GB
United Kingdom
Prior art keywords
deposition process
improvements relating
relating
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0227446A
Other versions
GB2395492A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermo Fisher Scientific Inc
Original Assignee
Thermo Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermo Electron Corp filed Critical Thermo Electron Corp
Priority to GB0227446A priority Critical patent/GB2395492A/en
Publication of GB0227446D0 publication Critical patent/GB0227446D0/en
Priority to AU2003285518A priority patent/AU2003285518A1/en
Priority to PCT/GB2003/005130 priority patent/WO2004048639A2/en
Publication of GB2395492A publication Critical patent/GB2395492A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
GB0227446A 2002-11-25 2002-11-25 Improvements in deposition methods for the production of semiconductors Withdrawn GB2395492A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0227446A GB2395492A (en) 2002-11-25 2002-11-25 Improvements in deposition methods for the production of semiconductors
AU2003285518A AU2003285518A1 (en) 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process
PCT/GB2003/005130 WO2004048639A2 (en) 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0227446A GB2395492A (en) 2002-11-25 2002-11-25 Improvements in deposition methods for the production of semiconductors

Publications (2)

Publication Number Publication Date
GB0227446D0 true GB0227446D0 (en) 2002-12-31
GB2395492A GB2395492A (en) 2004-05-26

Family

ID=9948456

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0227446A Withdrawn GB2395492A (en) 2002-11-25 2002-11-25 Improvements in deposition methods for the production of semiconductors

Country Status (3)

Country Link
AU (1) AU2003285518A1 (en)
GB (1) GB2395492A (en)
WO (1) WO2004048639A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit
JP2914992B2 (en) * 1989-03-31 1999-07-05 キヤノン株式会社 Deposition film formation method
JP3531991B2 (en) * 1995-02-08 2004-05-31 松下電器産業株式会社 CVD simulation method
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
JPH11243061A (en) * 1998-02-25 1999-09-07 Sumitomo Metal Ind Ltd Vapor-phase growing method and device thereof
JPH11297582A (en) * 1998-04-14 1999-10-29 Rikagaku Kenkyusho System and method for diagnosing generation of fine grain
JP3269463B2 (en) * 1998-07-23 2002-03-25 信越半導体株式会社 Correction method for thin film growth temperature
US6424880B1 (en) * 1999-09-10 2002-07-23 Applied Materials, Inc. Multi-computer chamber control system, method and medium
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
DE10124609B4 (en) * 2001-05-17 2012-12-27 Aixtron Se Method for depositing active layers on substrates

Also Published As

Publication number Publication date
WO2004048639A3 (en) 2004-11-18
GB2395492A (en) 2004-05-26
AU2003285518A1 (en) 2004-06-18
AU2003285518A8 (en) 2004-06-18
WO2004048639A2 (en) 2004-06-10

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)