AU2003285518A1 - Method and apparatus for controlling a deposition process - Google Patents

Method and apparatus for controlling a deposition process

Info

Publication number
AU2003285518A1
AU2003285518A1 AU2003285518A AU2003285518A AU2003285518A1 AU 2003285518 A1 AU2003285518 A1 AU 2003285518A1 AU 2003285518 A AU2003285518 A AU 2003285518A AU 2003285518 A AU2003285518 A AU 2003285518A AU 2003285518 A1 AU2003285518 A1 AU 2003285518A1
Authority
AU
Australia
Prior art keywords
controlling
deposition process
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003285518A
Other versions
AU2003285518A8 (en
Inventor
Jeffrey James Harris
David Charles Poole
Gavin Charles Rider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Instruments Plasma Technology Ltd
Original Assignee
Oxford Instruments Plasma Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instruments Plasma Technology Ltd filed Critical Oxford Instruments Plasma Technology Ltd
Publication of AU2003285518A8 publication Critical patent/AU2003285518A8/en
Publication of AU2003285518A1 publication Critical patent/AU2003285518A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2003285518A 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process Abandoned AU2003285518A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0227446A GB2395492A (en) 2002-11-25 2002-11-25 Improvements in deposition methods for the production of semiconductors
GB0227446.2 2002-11-25
PCT/GB2003/005130 WO2004048639A2 (en) 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process

Publications (2)

Publication Number Publication Date
AU2003285518A8 AU2003285518A8 (en) 2004-06-18
AU2003285518A1 true AU2003285518A1 (en) 2004-06-18

Family

ID=9948456

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003285518A Abandoned AU2003285518A1 (en) 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process

Country Status (3)

Country Link
AU (1) AU2003285518A1 (en)
GB (1) GB2395492A (en)
WO (1) WO2004048639A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit
JP2914992B2 (en) * 1989-03-31 1999-07-05 キヤノン株式会社 Deposition film formation method
JP3531991B2 (en) * 1995-02-08 2004-05-31 松下電器産業株式会社 CVD simulation method
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
JPH11243061A (en) * 1998-02-25 1999-09-07 Sumitomo Metal Ind Ltd Vapor-phase growing method and device thereof
JPH11297582A (en) * 1998-04-14 1999-10-29 Rikagaku Kenkyusho System and method for diagnosing generation of fine grain
JP3269463B2 (en) * 1998-07-23 2002-03-25 信越半導体株式会社 Correction method for thin film growth temperature
US6424880B1 (en) * 1999-09-10 2002-07-23 Applied Materials, Inc. Multi-computer chamber control system, method and medium
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
DE10124609B4 (en) * 2001-05-17 2012-12-27 Aixtron Se Method for depositing active layers on substrates

Also Published As

Publication number Publication date
GB0227446D0 (en) 2002-12-31
WO2004048639A3 (en) 2004-11-18
WO2004048639A2 (en) 2004-06-10
AU2003285518A8 (en) 2004-06-18
GB2395492A (en) 2004-05-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase