AU2003285518A1 - Method and apparatus for controlling a deposition process - Google Patents
Method and apparatus for controlling a deposition processInfo
- Publication number
- AU2003285518A1 AU2003285518A1 AU2003285518A AU2003285518A AU2003285518A1 AU 2003285518 A1 AU2003285518 A1 AU 2003285518A1 AU 2003285518 A AU2003285518 A AU 2003285518A AU 2003285518 A AU2003285518 A AU 2003285518A AU 2003285518 A1 AU2003285518 A1 AU 2003285518A1
- Authority
- AU
- Australia
- Prior art keywords
- controlling
- deposition process
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0227446A GB2395492A (en) | 2002-11-25 | 2002-11-25 | Improvements in deposition methods for the production of semiconductors |
GB0227446.2 | 2002-11-25 | ||
PCT/GB2003/005130 WO2004048639A2 (en) | 2002-11-25 | 2003-11-25 | Method and apparatus for controlling a deposition process |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2003285518A8 AU2003285518A8 (en) | 2004-06-18 |
AU2003285518A1 true AU2003285518A1 (en) | 2004-06-18 |
Family
ID=9948456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003285518A Abandoned AU2003285518A1 (en) | 2002-11-25 | 2003-11-25 | Method and apparatus for controlling a deposition process |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003285518A1 (en) |
GB (1) | GB2395492A (en) |
WO (1) | WO2004048639A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10876206B2 (en) | 2015-09-01 | 2020-12-29 | Silcotek Corp. | Thermal chemical vapor deposition coating |
US20170211180A1 (en) * | 2016-01-22 | 2017-07-27 | Silcotek Corp. | Diffusion-rate-limited thermal chemical vapor deposition coating |
US11161324B2 (en) | 2017-09-13 | 2021-11-02 | Silcotek Corp. | Corrosion-resistant coated article and thermal chemical vapor deposition coating process |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4607591A (en) * | 1985-08-06 | 1986-08-26 | Spectrum Cvd, Inc. | CVD heater control circuit |
JP2914992B2 (en) * | 1989-03-31 | 1999-07-05 | キヤノン株式会社 | Deposition film formation method |
JP3531991B2 (en) * | 1995-02-08 | 2004-05-31 | 松下電器産業株式会社 | CVD simulation method |
US6162488A (en) * | 1996-05-14 | 2000-12-19 | Boston University | Method for closed loop control of chemical vapor deposition process |
JPH11243061A (en) * | 1998-02-25 | 1999-09-07 | Sumitomo Metal Ind Ltd | Vapor-phase growing method and device thereof |
JPH11297582A (en) * | 1998-04-14 | 1999-10-29 | Rikagaku Kenkyusho | System and method for diagnosing generation of fine grain |
JP3269463B2 (en) * | 1998-07-23 | 2002-03-25 | 信越半導体株式会社 | Correction method for thin film growth temperature |
US6424880B1 (en) * | 1999-09-10 | 2002-07-23 | Applied Materials, Inc. | Multi-computer chamber control system, method and medium |
US6335288B1 (en) * | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
DE10124609B4 (en) * | 2001-05-17 | 2012-12-27 | Aixtron Se | Method for depositing active layers on substrates |
-
2002
- 2002-11-25 GB GB0227446A patent/GB2395492A/en not_active Withdrawn
-
2003
- 2003-11-25 WO PCT/GB2003/005130 patent/WO2004048639A2/en not_active Application Discontinuation
- 2003-11-25 AU AU2003285518A patent/AU2003285518A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
GB2395492A (en) | 2004-05-26 |
WO2004048639A3 (en) | 2004-11-18 |
AU2003285518A8 (en) | 2004-06-18 |
GB0227446D0 (en) | 2002-12-31 |
WO2004048639A2 (en) | 2004-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |