New! View global litigation for patent families

WO2004048639A3 - Method and apparatus for controlling a deposition process - Google Patents

Method and apparatus for controlling a deposition process

Info

Publication number
WO2004048639A3
WO2004048639A3 PCT/GB2003/005130 GB0305130W WO2004048639A3 WO 2004048639 A3 WO2004048639 A3 WO 2004048639A3 GB 0305130 W GB0305130 W GB 0305130W WO 2004048639 A3 WO2004048639 A3 WO 2004048639A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
apparatus
process
same
used
deposition
Prior art date
Application number
PCT/GB2003/005130
Other languages
French (fr)
Other versions
WO2004048639A2 (en )
Inventor
David Charles Poole
Jeffrey James Harris
Gavin Charles Rider
Original Assignee
Oxford Instr Plasma Technology
David Charles Poole
Jeffrey James Harris
Gavin Charles Rider
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

A method and apparatus is provided for rapidly conducting studies of the temperature dependency of CVD processes, in a combinatorial style and with high temperature resolution, while using a single test substrate and few system adjustments. Other combinatorial experiments can also be conducted using the same apparatus to explore the interdependencies of other process parameters to map out a multidimensional process space. The preferred process conditions thereby determined can then be programmed into the deposition equipment’s control system to allow the same apparatus to be used immediately for production of uniform optimised films, without the need for any further equipment or process cross calibration. Preferably, the same apparatus used to determine an optimal growth rate at the knee of an Arrhenius curve is also used for back substrate processing.
PCT/GB2003/005130 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process WO2004048639A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0227446A GB0227446D0 (en) 2002-11-25 2002-11-25 Improvements relating to a deposition process
GB0227446.2 2002-11-25

Publications (2)

Publication Number Publication Date
WO2004048639A2 true WO2004048639A2 (en) 2004-06-10
WO2004048639A3 true true WO2004048639A3 (en) 2004-11-18

Family

ID=9948456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/005130 WO2004048639A3 (en) 2002-11-25 2003-11-25 Method and apparatus for controlling a deposition process

Country Status (2)

Country Link
GB (1) GB0227446D0 (en)
WO (1) WO2004048639A3 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit
JPH08218177A (en) * 1995-02-08 1996-08-27 Matsushita Electric Ind Co Ltd Cvd simulation method
US5624720A (en) * 1989-03-31 1997-04-29 Canon Kabushiki Kaisha Process for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent
JPH11243061A (en) * 1998-02-25 1999-09-07 Sumitomo Metal Ind Ltd Vapor-phase growing method and device thereof
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
EP1083470A2 (en) * 1999-09-10 2001-03-14 Applied Materials, Inc. Multi-computer chamber control system, method and medium
US6217651B1 (en) * 1998-07-23 2001-04-17 Shin-Etsu Handotai, Co., Ltd. Method for correction of thin film growth temperature
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6374194B1 (en) * 1998-04-14 2002-04-16 The Institute Of Physical And Chemical Research System and method of diagnosing particle formation
WO2002092876A1 (en) * 2001-05-17 2002-11-21 Aixtron Ag Method and device for depositing layers

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit
US5624720A (en) * 1989-03-31 1997-04-29 Canon Kabushiki Kaisha Process for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent
JPH08218177A (en) * 1995-02-08 1996-08-27 Matsushita Electric Ind Co Ltd Cvd simulation method
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
JPH11243061A (en) * 1998-02-25 1999-09-07 Sumitomo Metal Ind Ltd Vapor-phase growing method and device thereof
US6374194B1 (en) * 1998-04-14 2002-04-16 The Institute Of Physical And Chemical Research System and method of diagnosing particle formation
US6217651B1 (en) * 1998-07-23 2001-04-17 Shin-Etsu Handotai, Co., Ltd. Method for correction of thin film growth temperature
EP1083470A2 (en) * 1999-09-10 2001-03-14 Applied Materials, Inc. Multi-computer chamber control system, method and medium
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
WO2002092876A1 (en) * 2001-05-17 2002-11-21 Aixtron Ag Method and device for depositing layers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 14 22 December 1999 (1999-12-22) *

Also Published As

Publication number Publication date Type
WO2004048639A2 (en) 2004-06-10 application
GB0227446D0 (en) 2002-12-31 grant
GB2395492A (en) 2004-05-26 application

Similar Documents

Publication Publication Date Title
US6162488A (en) Method for closed loop control of chemical vapor deposition process
US6161054A (en) Cell control method and apparatus
US6190453B1 (en) Growth of epitaxial semiconductor material with improved crystallographic properties
Dong et al. Stress relaxation and misfit dislocation nucleation in the growth of misfitting films: A molecular dynamics simulation study
Hartwell Cell division from a genetic perspective
US4388342A (en) Method for chemical vapor deposition
US7160617B2 (en) Boron doped diamond
US6706541B1 (en) Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US20010019900A1 (en) Semiconductor manufacturing method and semiconductor manufacturing apparatus
Charalambides et al. Finite element method simulation of crack propagation in a brittle microcracking solid
Baumann et al. Multiscale modeling of thin-film deposition: applications to Si device processing
US20030084839A1 (en) Apparatus and method for diamond production
Bréchignac et al. Instability driven fragmentation of nanoscale fractal islands
Bellet-Amalric et al. Plastic strain relaxation of nitride heterostructures
Kulkarni et al. Quantification of defect dynamics in unsteady-state and steady-state Czochralski growth of monocrystalline silicon
US5961719A (en) Nucleation of diamond films using an electrode
Flöter et al. The nucleation and growth of large area, highly oriented diamond films on silicon substrates
WO2006127611A2 (en) Colorless single-crystal cvd diamond at rapid growth rate
Maroutian et al. Morphological instability of Cu vicinal surfaces during step-flow growth
Ali et al. Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations
US6919538B2 (en) Method for thermally treating substrates
Tachibana et al. Measurement of absolute densities and spatial distributions of Si and SiH in an RF-discharge silane plasma for the chemical vapor deposition of a-Si: H films
Thaller et al. [9] Seed enlargement and repeated seeding
US20060031788A1 (en) Optimization algorithm to optimize within substrate uniformities
Geng et al. Growth and strain characterization of high quality GaN crystal by HVPE

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP