GB0209737D0 - Method of isolating adjacent components of a semiconductor device - Google Patents

Method of isolating adjacent components of a semiconductor device

Info

Publication number
GB0209737D0
GB0209737D0 GB0209737A GB0209737A GB0209737D0 GB 0209737 D0 GB0209737 D0 GB 0209737D0 GB 0209737 A GB0209737 A GB 0209737A GB 0209737 A GB0209737 A GB 0209737A GB 0209737 D0 GB0209737 D0 GB 0209737D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
adjacent components
isolating adjacent
isolating
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0209737A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Newcastle, The
Newcastle University of Upon Tyne
Original Assignee
University of Newcastle, The
Newcastle University of Upon Tyne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Newcastle, The, Newcastle University of Upon Tyne filed Critical University of Newcastle, The
Priority to GB0209737A priority Critical patent/GB0209737D0/en
Publication of GB0209737D0 publication Critical patent/GB0209737D0/en
Priority to PCT/GB2003/001863 priority patent/WO2003094208A2/en
Priority to AU2003233867A priority patent/AU2003233867A1/en
Ceased legal-status Critical Current

Links

GB0209737A 2002-04-29 2002-04-29 Method of isolating adjacent components of a semiconductor device Ceased GB0209737D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0209737A GB0209737D0 (en) 2002-04-29 2002-04-29 Method of isolating adjacent components of a semiconductor device
PCT/GB2003/001863 WO2003094208A2 (en) 2002-04-29 2003-04-28 Method of isolating adjacent components of a semiconductor device
AU2003233867A AU2003233867A1 (en) 2002-04-29 2003-04-28 Method of isolating adjacent components of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0209737A GB0209737D0 (en) 2002-04-29 2002-04-29 Method of isolating adjacent components of a semiconductor device

Publications (1)

Publication Number Publication Date
GB0209737D0 true GB0209737D0 (en) 2002-06-05

Family

ID=9935691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0209737A Ceased GB0209737D0 (en) 2002-04-29 2002-04-29 Method of isolating adjacent components of a semiconductor device

Country Status (3)

Country Link
AU (1) AU2003233867A1 (en)
GB (1) GB0209737D0 (en)
WO (1) WO2003094208A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462549B2 (en) 2004-01-12 2008-12-09 Advanced Micro Devices, Inc. Shallow trench isolation process and structure with minimized strained silicon consumption
US8957476B2 (en) * 2012-12-20 2015-02-17 Intel Corporation Conversion of thin transistor elements from silicon to silicon germanium
GB2549911A (en) * 2013-06-26 2017-11-01 Intel Corp Conversion of thin transistor elements from silicon to silicon germanium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212110A (en) * 1992-05-26 1993-05-18 Motorola, Inc. Method for forming isolation regions in a semiconductor device
US5371035A (en) * 1993-02-01 1994-12-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit device
US6093613A (en) * 1998-02-09 2000-07-25 Chartered Semiconductor Manufacturing, Ltd Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits
US6573126B2 (en) * 2000-08-16 2003-06-03 Massachusetts Institute Of Technology Process for producing semiconductor article using graded epitaxial growth

Also Published As

Publication number Publication date
WO2003094208A3 (en) 2004-02-26
AU2003233867A8 (en) 2003-11-17
AU2003233867A1 (en) 2003-11-17
WO2003094208A2 (en) 2003-11-13

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)