GB0129887D0 - Trench-gate semiconductor devices and their manufacture - Google Patents

Trench-gate semiconductor devices and their manufacture

Info

Publication number
GB0129887D0
GB0129887D0 GBGB0129887.6A GB0129887A GB0129887D0 GB 0129887 D0 GB0129887 D0 GB 0129887D0 GB 0129887 A GB0129887 A GB 0129887A GB 0129887 D0 GB0129887 D0 GB 0129887D0
Authority
GB
United Kingdom
Prior art keywords
trench
manufacture
semiconductor devices
gate semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0129887.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of GB0129887D0 publication Critical patent/GB0129887D0/en
Priority to PCT/IB2002/001375 priority Critical patent/WO2002089195A2/en
Priority to AT02727822T priority patent/ATE537557T1/en
Priority to JP2002586395A priority patent/JP2004522305A/en
Priority to EP02727822A priority patent/EP1393362B1/en
Priority to KR1020027017799A priority patent/KR20040002411A/en
Priority to US10/134,213 priority patent/US6534367B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/0865—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
GBGB0129887.6A 2001-04-28 2001-12-14 Trench-gate semiconductor devices and their manufacture Ceased GB0129887D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/IB2002/001375 WO2002089195A2 (en) 2001-04-28 2002-04-25 Method of manufacturing a trench-gate semiconductor device
AT02727822T ATE537557T1 (en) 2001-04-28 2002-04-25 METHOD FOR PRODUCING A TRENCH GATE SEMICONDUCTOR DEVICE
JP2002586395A JP2004522305A (en) 2001-04-28 2002-04-25 Trench gate semiconductor devices and methods for their manufacture
EP02727822A EP1393362B1 (en) 2001-04-28 2002-04-25 Method of manufacturing a trench-gate semiconductor device
KR1020027017799A KR20040002411A (en) 2001-04-28 2002-04-25 Trench-gate semiconductor devices and their manufacture
US10/134,213 US6534367B2 (en) 2001-04-28 2002-04-26 Trench-gate semiconductor devices and their manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0110459.5A GB0110459D0 (en) 2001-04-28 2001-04-28 Trench-gate semiconductor devices and their manufacture

Publications (1)

Publication Number Publication Date
GB0129887D0 true GB0129887D0 (en) 2002-02-06

Family

ID=9913667

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0110459.5A Ceased GB0110459D0 (en) 2001-04-28 2001-04-28 Trench-gate semiconductor devices and their manufacture
GBGB0129887.6A Ceased GB0129887D0 (en) 2001-04-28 2001-12-14 Trench-gate semiconductor devices and their manufacture

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0110459.5A Ceased GB0110459D0 (en) 2001-04-28 2001-04-28 Trench-gate semiconductor devices and their manufacture

Country Status (3)

Country Link
KR (1) KR20040002411A (en)
AT (1) ATE537557T1 (en)
GB (2) GB0110459D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100594321B1 (en) * 2005-02-14 2006-06-30 삼성전자주식회사 Transistor enlarging contact surface on source/drain and manufacturing method therefor
KR100988776B1 (en) * 2007-12-27 2010-10-20 주식회사 동부하이텍 Method of manufacturing a recessed gate transistor
KR101094372B1 (en) 2009-06-30 2011-12-15 주식회사 하이닉스반도체 Method for manufacturing semiconductor device with buried gate

Also Published As

Publication number Publication date
ATE537557T1 (en) 2011-12-15
GB0110459D0 (en) 2001-06-20
KR20040002411A (en) 2004-01-07

Similar Documents

Publication Publication Date Title
GB0117949D0 (en) Trench-gate semiconductor devices and their manufacture
GB0122122D0 (en) Trench-gate semiconductor devices and their manufacture
GB9826041D0 (en) Trench-gate semiconductor devices and their manufacture
GB9928285D0 (en) Manufacture of trench-gate semiconductor devices
SG119148A1 (en) Semiconductor device
SG114537A1 (en) Semiconductor device
EP1353385A4 (en) Semiconductor device
SG120075A1 (en) Semiconductor device
GB9922764D0 (en) Manufacture of trench-gate semiconductor devices
EP1355362A4 (en) Semiconductor device
GB0312512D0 (en) Termination structures for semiconductor devices and the manufacture thereof
GB0324099D0 (en) Manufacture of trench-gate semiconductor devices
SG121715A1 (en) Semiconductor device and method of manufacturing the same
GB0113143D0 (en) Manufacture of trench-gate semiconductor devices
GB2393325B (en) Semiconductor device and manufacturing method thereof
GB0130018D0 (en) Semiconductor devices and their manufacture
EP1291925A4 (en) Semiconductor device
EP1164640A4 (en) Semiconductor device and manufacture thereof
EP1381088A4 (en) Semiconductor device
GB0312514D0 (en) Termination structures for semiconductor devices and the manufacture thereof
GB0303162D0 (en) Trench-gate semiconductor devices and the manufacture thereof
EP1378943A4 (en) Semiconductor device and its manufacturing method
EP1458027A4 (en) Semiconductor device
GB0203323D0 (en) Semiconductor device and method of manufacturing the same
GB2394835B (en) Semiconductor structure

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)