GB0106709D0 - New quantum dot laser structure - Google Patents
New quantum dot laser structureInfo
- Publication number
- GB0106709D0 GB0106709D0 GB0106709A GB0106709A GB0106709D0 GB 0106709 D0 GB0106709 D0 GB 0106709D0 GB 0106709 A GB0106709 A GB 0106709A GB 0106709 A GB0106709 A GB 0106709A GB 0106709 D0 GB0106709 D0 GB 0106709D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- quantum dot
- laser structure
- dot laser
- new quantum
- new
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0106709A GB2373371A (en) | 2001-03-17 | 2001-03-17 | Quantum dot laser structure |
PCT/IB2002/001842 WO2002075876A2 (en) | 2001-03-17 | 2002-03-18 | New quantum dot laser structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0106709A GB2373371A (en) | 2001-03-17 | 2001-03-17 | Quantum dot laser structure |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0106709D0 true GB0106709D0 (en) | 2001-05-09 |
GB2373371A GB2373371A (en) | 2002-09-18 |
Family
ID=9910960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0106709A Withdrawn GB2373371A (en) | 2001-03-17 | 2001-03-17 | Quantum dot laser structure |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2373371A (en) |
WO (1) | WO2002075876A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2388957A (en) | 2002-05-24 | 2003-11-26 | Imp College Innovations Ltd | Quantum dots for extended wavelength operation |
CN104393098B (en) * | 2014-10-09 | 2016-05-11 | 苏州强明光电有限公司 | Multijunction solar cell of based semiconductor quantum dot and preparation method thereof |
CN104241452B (en) * | 2014-10-09 | 2016-08-24 | 苏州强明光电有限公司 | Flexible quanta solaode and preparation method thereof |
CN110854678B (en) * | 2018-08-20 | 2021-02-05 | 山东华光光电子股份有限公司 | Preparation method of GaAs-based high-power laser |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223043A (en) * | 1991-02-11 | 1993-06-29 | The United States Of America As Represented By The United States Department Of Energy | Current-matched high-efficiency, multijunction monolithic solar cells |
US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
JPH10326906A (en) * | 1997-05-26 | 1998-12-08 | Hamamatsu Photonics Kk | Photodetection element and image-pickup element |
JPH1187689A (en) * | 1997-09-04 | 1999-03-30 | Fujitsu Ltd | Manufacture of quantum dot |
-
2001
- 2001-03-17 GB GB0106709A patent/GB2373371A/en not_active Withdrawn
-
2002
- 2002-03-18 WO PCT/IB2002/001842 patent/WO2002075876A2/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB2373371A (en) | 2002-09-18 |
WO2002075876A3 (en) | 2003-11-06 |
WO2002075876A2 (en) | 2002-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |