GB0329610D0 - Improved quantum dot structure - Google Patents

Improved quantum dot structure

Info

Publication number
GB0329610D0
GB0329610D0 GB0329610A GB0329610A GB0329610D0 GB 0329610 D0 GB0329610 D0 GB 0329610D0 GB 0329610 A GB0329610 A GB 0329610A GB 0329610 A GB0329610 A GB 0329610A GB 0329610 D0 GB0329610 D0 GB 0329610D0
Authority
GB
United Kingdom
Prior art keywords
quantum dot
dot structure
improved quantum
improved
quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0329610A
Other versions
GB2409334A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Priority to GB0329610A priority Critical patent/GB2409334A/en
Publication of GB0329610D0 publication Critical patent/GB0329610D0/en
Publication of GB2409334A publication Critical patent/GB2409334A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
GB0329610A 2003-12-20 2003-12-20 Quantum dot structure having GaAs layers formed at varying partial pressures Withdrawn GB2409334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0329610A GB2409334A (en) 2003-12-20 2003-12-20 Quantum dot structure having GaAs layers formed at varying partial pressures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0329610A GB2409334A (en) 2003-12-20 2003-12-20 Quantum dot structure having GaAs layers formed at varying partial pressures

Publications (2)

Publication Number Publication Date
GB0329610D0 true GB0329610D0 (en) 2004-01-28
GB2409334A GB2409334A (en) 2005-06-22

Family

ID=30776227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0329610A Withdrawn GB2409334A (en) 2003-12-20 2003-12-20 Quantum dot structure having GaAs layers formed at varying partial pressures

Country Status (1)

Country Link
GB (1) GB2409334A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013109908A1 (en) 2012-01-18 2013-07-25 The Penn State Research Foundation Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes
CN103325663B (en) * 2012-03-23 2016-03-16 北京邮电大学 The preparation method of heterostructure is received in the compound of nanowire sidewalls growth quantum point
JP2022078795A (en) * 2020-11-13 2022-05-25 株式会社デンソー Semiconductor laser device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011271A (en) * 1994-04-28 2000-01-04 Fujitsu Limited Semiconductor device and method of fabricating the same
JP3468866B2 (en) * 1994-09-16 2003-11-17 富士通株式会社 Semiconductor device using three-dimensional quantum confinement
JP4138930B2 (en) * 1998-03-17 2008-08-27 富士通株式会社 Quantum semiconductor device and quantum semiconductor light emitting device
KR100379617B1 (en) * 2001-03-26 2003-04-10 한국과학기술연구원 Method of forming quantum dot array using tilted substrate
GB2388957A (en) * 2002-05-24 2003-11-26 Imp College Innovations Ltd Quantum dots for extended wavelength operation

Also Published As

Publication number Publication date
GB2409334A (en) 2005-06-22

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)