GB0012982D0 - Semiconductor device having a capacitive element and method of forming the same - Google Patents
Semiconductor device having a capacitive element and method of forming the sameInfo
- Publication number
- GB0012982D0 GB0012982D0 GB0012982A GB0012982A GB0012982D0 GB 0012982 D0 GB0012982 D0 GB 0012982D0 GB 0012982 A GB0012982 A GB 0012982A GB 0012982 A GB0012982 A GB 0012982A GB 0012982 D0 GB0012982 D0 GB 0012982D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- forming
- semiconductor device
- same
- capacitive element
- capacitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11148480A JP2000340645A (en) | 1999-05-27 | 1999-05-27 | Semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0012982D0 true GB0012982D0 (en) | 2000-07-19 |
| GB2352328A GB2352328A (en) | 2001-01-24 |
Family
ID=15453707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0012982A Withdrawn GB2352328A (en) | 1999-05-27 | 2000-05-26 | Semiconductor device having a capacitive element and method of forming the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000340645A (en) |
| CN (1) | CN1275809A (en) |
| GB (1) | GB2352328A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5076570B2 (en) * | 2007-03-16 | 2012-11-21 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| JP4994437B2 (en) * | 2009-11-18 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device and manufacturing method thereof |
| JP5563811B2 (en) * | 2009-12-09 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| JP7086018B2 (en) | 2019-03-12 | 2022-06-17 | ルネサスエレクトロニクス株式会社 | Semiconductor devices and their manufacturing methods |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG45497A1 (en) * | 1995-09-05 | 1998-01-16 | Chartered Semiconductors Manuf | Low profile shallon trench double polysilicon capacitor |
-
1999
- 1999-05-27 JP JP11148480A patent/JP2000340645A/en active Pending
-
2000
- 2000-05-26 GB GB0012982A patent/GB2352328A/en not_active Withdrawn
- 2000-05-26 CN CN 00109321 patent/CN1275809A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1275809A (en) | 2000-12-06 |
| JP2000340645A (en) | 2000-12-08 |
| GB2352328A (en) | 2001-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |