GB0000519D0 - A method of manufacturing a semiconductor laser device,and a semiconductor laser device - Google Patents

A method of manufacturing a semiconductor laser device,and a semiconductor laser device

Info

Publication number
GB0000519D0
GB0000519D0 GB0000519A GB0000519A GB0000519D0 GB 0000519 D0 GB0000519 D0 GB 0000519D0 GB 0000519 A GB0000519 A GB 0000519A GB 0000519 A GB0000519 A GB 0000519A GB 0000519 D0 GB0000519 D0 GB 0000519D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser device
manufacturing
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0000519A
Other versions
GB2358281A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB0000519A priority Critical patent/GB2358281A/en
Publication of GB0000519D0 publication Critical patent/GB0000519D0/en
Publication of GB2358281A publication Critical patent/GB2358281A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
GB0000519A 2000-01-12 2000-01-12 A method of manufacturing a semiconductor laser device Withdrawn GB2358281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0000519A GB2358281A (en) 2000-01-12 2000-01-12 A method of manufacturing a semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0000519A GB2358281A (en) 2000-01-12 2000-01-12 A method of manufacturing a semiconductor laser device

Publications (2)

Publication Number Publication Date
GB0000519D0 true GB0000519D0 (en) 2000-03-01
GB2358281A GB2358281A (en) 2001-07-18

Family

ID=9883472

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0000519A Withdrawn GB2358281A (en) 2000-01-12 2000-01-12 A method of manufacturing a semiconductor laser device

Country Status (1)

Country Link
GB (1) GB2358281A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
CN100449891C (en) * 2003-12-15 2009-01-07 古河电气工业株式会社 Semiconductor device manufacturing method
JP2008235790A (en) * 2007-03-23 2008-10-02 Mitsubishi Electric Corp Manufacturing method of semiconductor light element
GB2476250A (en) * 2009-12-16 2011-06-22 Univ Sheffield Optical device and fabrication method involving selective quantum well intermixing
CN102916338B (en) * 2012-10-10 2018-11-02 长春理工大学 A method of making GaAs base semiconductor laser non-absorbing windows

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376582A (en) * 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
US5708674A (en) * 1995-01-03 1998-01-13 Xerox Corporation Semiconductor laser or array formed by layer intermixing
JP3725582B2 (en) * 1995-07-05 2005-12-14 三菱電機株式会社 Semiconductor laser device manufacturing method and semiconductor laser device

Also Published As

Publication number Publication date
GB2358281A (en) 2001-07-18

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)