FR88265E - Redresseur pnpn pour courants forts et son procédé de fabrication - Google Patents

Redresseur pnpn pour courants forts et son procédé de fabrication

Info

Publication number
FR88265E
FR88265E FR18571A FR18571A FR88265E FR 88265 E FR88265 E FR 88265E FR 18571 A FR18571 A FR 18571A FR 18571 A FR18571 A FR 18571A FR 88265 E FR88265 E FR 88265E
Authority
FR
France
Prior art keywords
pnpn
rectifier
manufacturing process
strong currents
currents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR18571A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1052447D priority Critical patent/GB1052447A/en
Priority to DE1962S0081478 priority patent/DE1214790C2/de
Priority to CH788363A priority patent/CH416839A/de
Priority to US308830A priority patent/US3349299A/en
Priority to FR947356A priority patent/FR1418007A/fr
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Priority to FR18571A priority patent/FR88265E/fr
Application granted granted Critical
Publication of FR88265E publication Critical patent/FR88265E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR18571A 1962-09-15 1965-05-26 Redresseur pnpn pour courants forts et son procédé de fabrication Expired FR88265E (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB1052447D GB1052447A (enrdf_load_stackoverflow) 1962-09-15
DE1962S0081478 DE1214790C2 (de) 1962-09-15 1962-09-15 Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps
CH788363A CH416839A (de) 1962-09-15 1963-06-25 Leistungsgleichrichter mit einkristallinem Halbleiterkörper und vier Schichten abwechselnden Leitfähigkeitstyps
US308830A US3349299A (en) 1962-09-15 1963-09-13 Power recitfier of the npnp type having recombination centers therein
FR947356A FR1418007A (fr) 1962-09-15 1963-09-15 Redresseur pn-pn pour courants forts et son procédé de fabrication
FR18571A FR88265E (fr) 1962-09-15 1965-05-26 Redresseur pnpn pour courants forts et son procédé de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1962S0081478 DE1214790C2 (de) 1962-09-15 1962-09-15 Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps
FR18571A FR88265E (fr) 1962-09-15 1965-05-26 Redresseur pnpn pour courants forts et son procédé de fabrication

Publications (1)

Publication Number Publication Date
FR88265E true FR88265E (fr) 1967-01-06

Family

ID=25996996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR18571A Expired FR88265E (fr) 1962-09-15 1965-05-26 Redresseur pnpn pour courants forts et son procédé de fabrication

Country Status (5)

Country Link
US (1) US3349299A (enrdf_load_stackoverflow)
CH (1) CH416839A (enrdf_load_stackoverflow)
DE (1) DE1214790C2 (enrdf_load_stackoverflow)
FR (1) FR88265E (enrdf_load_stackoverflow)
GB (1) GB1052447A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3390022A (en) * 1965-06-30 1968-06-25 North American Rockwell Semiconductor device and process for producing same
GB1155978A (en) * 1965-10-28 1969-06-25 Matsushita Electric Ind Co Ltd Pressure-Responsive Semiconductor Device.
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
DE2333429C3 (de) * 1973-06-30 1984-01-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor und Verfahren zu seiner Herstellung
DE2422395C3 (de) * 1974-05-09 1986-03-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
CH580339A5 (enrdf_load_stackoverflow) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
JPS5230389A (en) * 1975-09-03 1977-03-08 Hitachi Ltd Thyristor
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
JPS594075A (ja) * 1982-06-30 1984-01-10 Toshiba Corp サイリスタ
GB2359415A (en) * 2000-02-21 2001-08-22 Westcode Semiconductors Ltd Profiling of semiconductor wafer to prevent edge breakdown

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036226A (en) * 1958-12-15 1962-05-22 Ibm Negative resistance semiconductor circuit utilizing four-layer transistor
NL239104A (enrdf_load_stackoverflow) * 1958-05-26 1900-01-01 Western Electric Co
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3064132A (en) * 1959-11-10 1962-11-13 Westinghouse Electric Corp Semiconductor device
NL265766A (enrdf_load_stackoverflow) * 1960-06-10
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3210560A (en) * 1961-04-17 1965-10-05 Westinghouse Electric Corp Semiconductor device
NL275313A (enrdf_load_stackoverflow) * 1961-05-10

Also Published As

Publication number Publication date
DE1214790C2 (de) 1973-08-30
US3349299A (en) 1967-10-24
DE1214790B (de) 1966-04-21
CH416839A (de) 1966-07-15
GB1052447A (enrdf_load_stackoverflow)

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